Rare-earth-ion-doped ultra-narrow-linewidth lasers on a silicon chip and applications to intra-laser-cavity optical sensing

Edward Bernhardi, R.M. de Ridder, Kerstin Worhoff, Markus Pollnau

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    1 Citation (Scopus)

    Abstract

    We report on diode-pumped distributed-feedback (DFB) and distributed-Bragg-reflector (DBR) channel waveguide lasers in Er-doped and Yb-doped Al2O3 on standard thermally oxidized silicon substrates. Uniform surface-relief Bragg gratings were patterned by laser-interference lithography and etched into the SiO2 top cladding. The maximum grating reflectivity exceeded 99%. Monolithic DFB and DBR cavities with Q-factors of up to 1.35×10^6 were realized. The Er-doped DFB laser delivered 3 mW of output power with a slope efficiency of 41% versus absorbed pump power. Single-longitudinal-mode operation at a wavelength of 1545.2 nm was achieved with an emission line width of 1.70 ± 0.58 kHz, corresponding to a laser Q-factor of 1.14×10^11. Yb-doped DFB and DBR lasers were demonstrated at wavelengths near 1020 nm with output powers of 55 mW and a slope efficiency of 67% versus launched pump power. An Yb-doped dual-wavelength laser was achieved based on the optical resonances induced by two local phase shifts in the DFB structure. A stable microwave signal at ~15 GHz with a –3-dB width of 9 kHz and a long-term frequency stability of ±2.5 MHz was created via the heterodyne photo-detection of the two laser wavelengths. By measuring changes in the microwave beat signal as the intra-cavity evanescent laser field interacts with micro-particles on the waveguide surface, we achieved real-time detection and accurate size measurement of single micro-particles with diameters ranging between 1 μm and 20 μm, which represents the typical size of many fungal and bacterial pathogens. A limit of detection of ~500 nm was deduced.
    Original languageEnglish
    Title of host publicationSolid State Lasers XXII
    Subtitle of host publicationTechnology and Devices
    Place of PublicationBellingham, WA
    PublisherSPIE
    Number of pages5
    ISBN (Print)978-0-81949-368-2
    DOIs
    Publication statusPublished - Feb 2013
    EventSPIE Laser Source Technologies and Industrial Lasers and Applications Conference, LASE 2013 - The Moscone Center, San Francisco, United States
    Duration: 2 Feb 20137 Feb 2013

    Publication series

    NameProceedings of the SPIE
    PublisherSPIE
    Volume8599
    ISSN (Print)0277-786X

    Conference

    ConferenceSPIE Laser Source Technologies and Industrial Lasers and Applications Conference, LASE 2013
    Abbreviated titleLASE
    CountryUnited States
    CitySan Francisco
    Period2/02/137/02/13

    Keywords

    • IOMS-APD: Active Photonic Devices
    • EWI-23212
    • Waveguide laser
    • METIS-296376
    • Distributed-feedback
    • IR-85265
    • particle sensor

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