Reactive Ion Etching of Y2O3 films applying F-, Cl- and Cl/Br-based Inductively Coupled Plasmas

J.D.B. Bradley, F. Ay, M. Pollnau, K. Wörhoff

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    37 Citations (Scopus)
    481 Downloads (Pure)

    Abstract

    Reactive ion etching of yttrium oxide thin films was investigated using $CF_{4}/O_{2}, BCl_{3}, HBr$ and $Cl_{2}$ inductively coupled plasmas. For all gas combinations, with the exception of $Cl_{2}$, the etch rate was found to be similar, indicating a primarily physical etch process, enhanced in $Cl_{2}$ by an additional chemical-etching component. The highest observed etch rate was 53 nm/min in $Cl_{2}$, suitable for controlled etching of optical ridge waveguide structures several hundred nm in height. Overall, the surface quality of the etched $Y_{2}O_{3}$ films was the highest after etching in $CF_{4}/O_{2}$ plasmas, indicating a trade-off in etch rate and film quality between the various process gases. Preliminary selectivity measurements show that Ni is a suitable material for etch-masking of high resolution structures in $Y_{2}O_{3}$.
    Original languageEnglish
    Title of host publicationScience and Technology of Dielectrics for Active and Passive Photonic Devices
    EditorsP. Masscher, K. Wörhoff, D. Misra
    Place of PublicationPennington, NJ
    PublisherThe Electrochemical Society Inc.
    Pages117-124
    Number of pages8
    ISBN (Print)1-56677-515-9
    DOIs
    Publication statusPublished - 2006
    Event210th Electrochemical Society Meeting, ECS 2006 - Cancún, Mexico
    Duration: 29 Oct 20063 Nov 2006

    Publication series

    NameECS Transactions
    PublisherThe Electrochemical Society
    Number11
    Volume3

    Conference

    Conference210th Electrochemical Society Meeting, ECS 2006
    Abbreviated titleECS 2006
    CountryMexico
    CityCancún
    Period29/10/063/11/06

    Fingerprint

    etching
    ions
    yttrium oxides
    masking
    gases
    ridges
    selectivity
    waveguides
    high resolution
    thin films

    Keywords

    • IOMS-APD: Advanced Photonic Devices

    Cite this

    Bradley, J. D. B., Ay, F., Pollnau, M., & Wörhoff, K. (2006). Reactive Ion Etching of Y2O3 films applying F-, Cl- and Cl/Br-based Inductively Coupled Plasmas. In P. Masscher, K. Wörhoff, & D. Misra (Eds.), Science and Technology of Dielectrics for Active and Passive Photonic Devices (pp. 117-124). (ECS Transactions; Vol. 3, No. 11). Pennington, NJ: The Electrochemical Society Inc.. https://doi.org/10.1149/1.2392925
    Bradley, J.D.B. ; Ay, F. ; Pollnau, M. ; Wörhoff, K. / Reactive Ion Etching of Y2O3 films applying F-, Cl- and Cl/Br-based Inductively Coupled Plasmas. Science and Technology of Dielectrics for Active and Passive Photonic Devices. editor / P. Masscher ; K. Wörhoff ; D. Misra. Pennington, NJ : The Electrochemical Society Inc., 2006. pp. 117-124 (ECS Transactions; 11).
    @inproceedings{2fde1bddd8694dfb85dff4c138091d98,
    title = "Reactive Ion Etching of Y2O3 films applying F-, Cl- and Cl/Br-based Inductively Coupled Plasmas",
    abstract = "Reactive ion etching of yttrium oxide thin films was investigated using $CF_{4}/O_{2}, BCl_{3}, HBr$ and $Cl_{2}$ inductively coupled plasmas. For all gas combinations, with the exception of $Cl_{2}$, the etch rate was found to be similar, indicating a primarily physical etch process, enhanced in $Cl_{2}$ by an additional chemical-etching component. The highest observed etch rate was 53 nm/min in $Cl_{2}$, suitable for controlled etching of optical ridge waveguide structures several hundred nm in height. Overall, the surface quality of the etched $Y_{2}O_{3}$ films was the highest after etching in $CF_{4}/O_{2}$ plasmas, indicating a trade-off in etch rate and film quality between the various process gases. Preliminary selectivity measurements show that Ni is a suitable material for etch-masking of high resolution structures in $Y_{2}O_{3}$.",
    keywords = "IOMS-APD: Advanced Photonic Devices",
    author = "J.D.B. Bradley and F. Ay and M. Pollnau and K. W{\"o}rhoff",
    year = "2006",
    doi = "10.1149/1.2392925",
    language = "English",
    isbn = "1-56677-515-9",
    series = "ECS Transactions",
    publisher = "The Electrochemical Society Inc.",
    number = "11",
    pages = "117--124",
    editor = "P. Masscher and K. W{\"o}rhoff and D. Misra",
    booktitle = "Science and Technology of Dielectrics for Active and Passive Photonic Devices",
    address = "United States",

    }

    Bradley, JDB, Ay, F, Pollnau, M & Wörhoff, K 2006, Reactive Ion Etching of Y2O3 films applying F-, Cl- and Cl/Br-based Inductively Coupled Plasmas. in P Masscher, K Wörhoff & D Misra (eds), Science and Technology of Dielectrics for Active and Passive Photonic Devices. ECS Transactions, no. 11, vol. 3, The Electrochemical Society Inc., Pennington, NJ, pp. 117-124, 210th Electrochemical Society Meeting, ECS 2006, Cancún, Mexico, 29/10/06. https://doi.org/10.1149/1.2392925

    Reactive Ion Etching of Y2O3 films applying F-, Cl- and Cl/Br-based Inductively Coupled Plasmas. / Bradley, J.D.B.; Ay, F.; Pollnau, M.; Wörhoff, K.

    Science and Technology of Dielectrics for Active and Passive Photonic Devices. ed. / P. Masscher; K. Wörhoff; D. Misra. Pennington, NJ : The Electrochemical Society Inc., 2006. p. 117-124 (ECS Transactions; Vol. 3, No. 11).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    TY - GEN

    T1 - Reactive Ion Etching of Y2O3 films applying F-, Cl- and Cl/Br-based Inductively Coupled Plasmas

    AU - Bradley, J.D.B.

    AU - Ay, F.

    AU - Pollnau, M.

    AU - Wörhoff, K.

    PY - 2006

    Y1 - 2006

    N2 - Reactive ion etching of yttrium oxide thin films was investigated using $CF_{4}/O_{2}, BCl_{3}, HBr$ and $Cl_{2}$ inductively coupled plasmas. For all gas combinations, with the exception of $Cl_{2}$, the etch rate was found to be similar, indicating a primarily physical etch process, enhanced in $Cl_{2}$ by an additional chemical-etching component. The highest observed etch rate was 53 nm/min in $Cl_{2}$, suitable for controlled etching of optical ridge waveguide structures several hundred nm in height. Overall, the surface quality of the etched $Y_{2}O_{3}$ films was the highest after etching in $CF_{4}/O_{2}$ plasmas, indicating a trade-off in etch rate and film quality between the various process gases. Preliminary selectivity measurements show that Ni is a suitable material for etch-masking of high resolution structures in $Y_{2}O_{3}$.

    AB - Reactive ion etching of yttrium oxide thin films was investigated using $CF_{4}/O_{2}, BCl_{3}, HBr$ and $Cl_{2}$ inductively coupled plasmas. For all gas combinations, with the exception of $Cl_{2}$, the etch rate was found to be similar, indicating a primarily physical etch process, enhanced in $Cl_{2}$ by an additional chemical-etching component. The highest observed etch rate was 53 nm/min in $Cl_{2}$, suitable for controlled etching of optical ridge waveguide structures several hundred nm in height. Overall, the surface quality of the etched $Y_{2}O_{3}$ films was the highest after etching in $CF_{4}/O_{2}$ plasmas, indicating a trade-off in etch rate and film quality between the various process gases. Preliminary selectivity measurements show that Ni is a suitable material for etch-masking of high resolution structures in $Y_{2}O_{3}$.

    KW - IOMS-APD: Advanced Photonic Devices

    U2 - 10.1149/1.2392925

    DO - 10.1149/1.2392925

    M3 - Conference contribution

    SN - 1-56677-515-9

    T3 - ECS Transactions

    SP - 117

    EP - 124

    BT - Science and Technology of Dielectrics for Active and Passive Photonic Devices

    A2 - Masscher, P.

    A2 - Wörhoff, K.

    A2 - Misra, D.

    PB - The Electrochemical Society Inc.

    CY - Pennington, NJ

    ER -

    Bradley JDB, Ay F, Pollnau M, Wörhoff K. Reactive Ion Etching of Y2O3 films applying F-, Cl- and Cl/Br-based Inductively Coupled Plasmas. In Masscher P, Wörhoff K, Misra D, editors, Science and Technology of Dielectrics for Active and Passive Photonic Devices. Pennington, NJ: The Electrochemical Society Inc. 2006. p. 117-124. (ECS Transactions; 11). https://doi.org/10.1149/1.2392925