Reactive Ion Etching of Y2O3 films applying F-, Cl- and Cl/Br-based Inductively Coupled Plasmas

J.D.B. Bradley, F. Ay, M. Pollnau, K. Wörhoff

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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Abstract

Reactive ion etching of yttrium oxide thin films was investigated using $CF_{4}/O_{2}, BCl_{3}, HBr$ and $Cl_{2}$ inductively coupled plasmas. For all gas combinations, with the exception of $Cl_{2}$, the etch rate was found to be similar, indicating a primarily physical etch process, enhanced in $Cl_{2}$ by an additional chemical-etching component. The highest observed etch rate was 53 nm/min in $Cl_{2}$, suitable for controlled etching of optical ridge waveguide structures several hundred nm in height. Overall, the surface quality of the etched $Y_{2}O_{3}$ films was the highest after etching in $CF_{4}/O_{2}$ plasmas, indicating a trade-off in etch rate and film quality between the various process gases. Preliminary selectivity measurements show that Ni is a suitable material for etch-masking of high resolution structures in $Y_{2}O_{3}$.
Original languageEnglish
Title of host publicationScience and Technology of Dielectrics for Active and Passive Photonic Devices
EditorsP. Masscher, K. Wörhoff, D. Misra
Place of PublicationPennington, NJ
PublisherThe Electrochemical Society Inc.
Pages117-124
Number of pages8
ISBN (Print)1-56677-515-9
DOIs
Publication statusPublished - 2006
Event210th Electrochemical Society Meeting, ECS 2006 - Cancún, Mexico
Duration: 29 Oct 20063 Nov 2006

Publication series

NameECS Transactions
PublisherThe Electrochemical Society
Number11
Volume3

Conference

Conference210th Electrochemical Society Meeting, ECS 2006
Abbreviated titleECS 2006
CountryMexico
CityCancún
Period29/10/063/11/06

Fingerprint

etching
ions
yttrium oxides
masking
gases
ridges
selectivity
waveguides
high resolution
thin films

Keywords

  • IOMS-APD: Advanced Photonic Devices

Cite this

Bradley, J. D. B., Ay, F., Pollnau, M., & Wörhoff, K. (2006). Reactive Ion Etching of Y2O3 films applying F-, Cl- and Cl/Br-based Inductively Coupled Plasmas. In P. Masscher, K. Wörhoff, & D. Misra (Eds.), Science and Technology of Dielectrics for Active and Passive Photonic Devices (pp. 117-124). (ECS Transactions; Vol. 3, No. 11). Pennington, NJ: The Electrochemical Society Inc.. https://doi.org/10.1149/1.2392925
Bradley, J.D.B. ; Ay, F. ; Pollnau, M. ; Wörhoff, K. / Reactive Ion Etching of Y2O3 films applying F-, Cl- and Cl/Br-based Inductively Coupled Plasmas. Science and Technology of Dielectrics for Active and Passive Photonic Devices. editor / P. Masscher ; K. Wörhoff ; D. Misra. Pennington, NJ : The Electrochemical Society Inc., 2006. pp. 117-124 (ECS Transactions; 11).
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abstract = "Reactive ion etching of yttrium oxide thin films was investigated using $CF_{4}/O_{2}, BCl_{3}, HBr$ and $Cl_{2}$ inductively coupled plasmas. For all gas combinations, with the exception of $Cl_{2}$, the etch rate was found to be similar, indicating a primarily physical etch process, enhanced in $Cl_{2}$ by an additional chemical-etching component. The highest observed etch rate was 53 nm/min in $Cl_{2}$, suitable for controlled etching of optical ridge waveguide structures several hundred nm in height. Overall, the surface quality of the etched $Y_{2}O_{3}$ films was the highest after etching in $CF_{4}/O_{2}$ plasmas, indicating a trade-off in etch rate and film quality between the various process gases. Preliminary selectivity measurements show that Ni is a suitable material for etch-masking of high resolution structures in $Y_{2}O_{3}$.",
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Bradley, JDB, Ay, F, Pollnau, M & Wörhoff, K 2006, Reactive Ion Etching of Y2O3 films applying F-, Cl- and Cl/Br-based Inductively Coupled Plasmas. in P Masscher, K Wörhoff & D Misra (eds), Science and Technology of Dielectrics for Active and Passive Photonic Devices. ECS Transactions, no. 11, vol. 3, The Electrochemical Society Inc., Pennington, NJ, pp. 117-124, 210th Electrochemical Society Meeting, ECS 2006, Cancún, Mexico, 29/10/06. https://doi.org/10.1149/1.2392925

Reactive Ion Etching of Y2O3 films applying F-, Cl- and Cl/Br-based Inductively Coupled Plasmas. / Bradley, J.D.B.; Ay, F.; Pollnau, M.; Wörhoff, K.

Science and Technology of Dielectrics for Active and Passive Photonic Devices. ed. / P. Masscher; K. Wörhoff; D. Misra. Pennington, NJ : The Electrochemical Society Inc., 2006. p. 117-124 (ECS Transactions; Vol. 3, No. 11).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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T1 - Reactive Ion Etching of Y2O3 films applying F-, Cl- and Cl/Br-based Inductively Coupled Plasmas

AU - Bradley, J.D.B.

AU - Ay, F.

AU - Pollnau, M.

AU - Wörhoff, K.

PY - 2006

Y1 - 2006

N2 - Reactive ion etching of yttrium oxide thin films was investigated using $CF_{4}/O_{2}, BCl_{3}, HBr$ and $Cl_{2}$ inductively coupled plasmas. For all gas combinations, with the exception of $Cl_{2}$, the etch rate was found to be similar, indicating a primarily physical etch process, enhanced in $Cl_{2}$ by an additional chemical-etching component. The highest observed etch rate was 53 nm/min in $Cl_{2}$, suitable for controlled etching of optical ridge waveguide structures several hundred nm in height. Overall, the surface quality of the etched $Y_{2}O_{3}$ films was the highest after etching in $CF_{4}/O_{2}$ plasmas, indicating a trade-off in etch rate and film quality between the various process gases. Preliminary selectivity measurements show that Ni is a suitable material for etch-masking of high resolution structures in $Y_{2}O_{3}$.

AB - Reactive ion etching of yttrium oxide thin films was investigated using $CF_{4}/O_{2}, BCl_{3}, HBr$ and $Cl_{2}$ inductively coupled plasmas. For all gas combinations, with the exception of $Cl_{2}$, the etch rate was found to be similar, indicating a primarily physical etch process, enhanced in $Cl_{2}$ by an additional chemical-etching component. The highest observed etch rate was 53 nm/min in $Cl_{2}$, suitable for controlled etching of optical ridge waveguide structures several hundred nm in height. Overall, the surface quality of the etched $Y_{2}O_{3}$ films was the highest after etching in $CF_{4}/O_{2}$ plasmas, indicating a trade-off in etch rate and film quality between the various process gases. Preliminary selectivity measurements show that Ni is a suitable material for etch-masking of high resolution structures in $Y_{2}O_{3}$.

KW - IOMS-APD: Advanced Photonic Devices

U2 - 10.1149/1.2392925

DO - 10.1149/1.2392925

M3 - Conference contribution

SN - 1-56677-515-9

T3 - ECS Transactions

SP - 117

EP - 124

BT - Science and Technology of Dielectrics for Active and Passive Photonic Devices

A2 - Masscher, P.

A2 - Wörhoff, K.

A2 - Misra, D.

PB - The Electrochemical Society Inc.

CY - Pennington, NJ

ER -

Bradley JDB, Ay F, Pollnau M, Wörhoff K. Reactive Ion Etching of Y2O3 films applying F-, Cl- and Cl/Br-based Inductively Coupled Plasmas. In Masscher P, Wörhoff K, Misra D, editors, Science and Technology of Dielectrics for Active and Passive Photonic Devices. Pennington, NJ: The Electrochemical Society Inc. 2006. p. 117-124. (ECS Transactions; 11). https://doi.org/10.1149/1.2392925