Reactively co-sputtered Al2O3:Er3+ for active photonic devices

J. Bradley, L. Agazzi, D. Geskus, F. Ay, Kerstin Worhoff, Markus Pollnau

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    Abstract

    Reactive co-sputtering has been applied as a low-cost method for deposition of $Al_2O_3:Er^{3+}$ layers. Channel waveguide fabrication has been optimized and results in waveguides with low background losses (0.21 dB/cm), demonstrating the feasibility of realizing active photonic devices. A net optical gain of 0.84 dB/cm for a 1533-nm signal has been obtained in a 700-nm-thick Er3+-doped $Al_2O_3$ waveguide pumped at 980 nm, which is the highest gain demonstrated thus far in this material.
    Original languageUndefined
    Title of host publication2008 Annual Workshop of the IEEE LEOS Benelux Chapter "Materials, Devices and Systems in Optics and Photonics
    EditorsP Tassin
    Place of PublicationBrussels, Belgium
    PublisherIEEE/LEOS Benelux Chapter
    Pages9-10
    Number of pages2
    ISBN (Print)978-90-9023255-3
    Publication statusPublished - 30 May 2008
    Event13th Annual Symposium of the IEEE/LEOS Benelux Chapter 2008 - Enschede, Netherlands
    Duration: 27 Nov 200828 Nov 2008
    Conference number: 13

    Publication series

    Name
    PublisherIEEE LEOS Benelux Chapter
    NumberWP 08-02

    Conference

    Conference13th Annual Symposium of the IEEE/LEOS Benelux Chapter 2008
    CountryNetherlands
    CityEnschede
    Period27/11/0828/11/08

    Keywords

    • IOMS-APD: Active Photonic Devices
    • METIS-255135
    • IR-65315
    • EWI-14910

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