Reactively co-sputtered Al2O3:Er3+ for active photonic devices

J. Bradley; L. Agazzi; D. Geskus; F. Ay; Kerstin Worhoff; Markus Pollnau

Reactively co-sputtered Al₂O₃:Er³⁺ for active photonic devices

J. Bradley, L. Agazzi, D. Geskus, F. Ay, Kerstin Worhoff, Markus Pollnau

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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Abstract

Reactive co-sputtering has been applied as a low-cost method for deposition of $Al_2O_3:Er^{3+}$ layers. Channel waveguide fabrication has been optimized and results in waveguides with low background losses (0.21 dB/cm), demonstrating the feasibility of realizing active photonic devices. A net optical gain of 0.84 dB/cm for a 1533-nm signal has been obtained in a 700-nm-thick Er3+-doped $Al_2O_3$ waveguide pumped at 980 nm, which is the highest gain demonstrated thus far in this material.

Original language	Undefined
Title of host publication	2008 Annual Workshop of the IEEE LEOS Benelux Chapter "Materials, Devices and Systems in Optics and Photonics
Editors	P Tassin
Place of Publication	Brussels, Belgium
Publisher	IEEE
Pages	9-10
Number of pages	2
ISBN (Print)	978-90-9023255-3
Publication status	Published - 30 May 2008
Event	13th Annual Symposium of the IEEE/LEOS Benelux Chapter 2008 - Enschede, Netherlands Duration: 27 Nov 2008 → 28 Nov 2008 Conference number: 13

Publication series

Name
Publisher	IEEE LEOS Benelux Chapter
Number	WP 08-02

Conference

Conference	13th Annual Symposium of the IEEE/LEOS Benelux Chapter 2008
Country/Territory	Netherlands
City	Enschede
Period	27/11/08 → 28/11/08

Keywords

IOMS-APD: Active Photonic Devices
METIS-255135
IR-65315
EWI-14910

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Cite this

@inproceedings{39b2484b0f374d5cbeda5c36a6673135,

title = "Reactively co-sputtered Al2O3:Er3+ for active photonic devices",

abstract = "Reactive co-sputtering has been applied as a low-cost method for deposition of $Al_2O_3:Er^{3+}$ layers. Channel waveguide fabrication has been optimized and results in waveguides with low background losses (0.21 dB/cm), demonstrating the feasibility of realizing active photonic devices. A net optical gain of 0.84 dB/cm for a 1533-nm signal has been obtained in a 700-nm-thick Er3+-doped $Al_2O_3$ waveguide pumped at 980 nm, which is the highest gain demonstrated thus far in this material.",

keywords = "IOMS-APD: Active Photonic Devices, METIS-255135, IR-65315, EWI-14910",

author = "J. Bradley and L. Agazzi and D. Geskus and F. Ay and Kerstin Worhoff and Markus Pollnau",

year = "2008",

month = may,

day = "30",

language = "Undefined",

isbn = "978-90-9023255-3",

publisher = "IEEE",

number = "WP 08-02",

pages = "9--10",

editor = "P Tassin",

booktitle = "2008 Annual Workshop of the IEEE LEOS Benelux Chapter {"}Materials, Devices and Systems in Optics and Photonics",

address = "United States",

note = "13th Annual Symposium of the IEEE/LEOS Benelux Chapter 2008 ; Conference date: 27-11-2008 Through 28-11-2008",

}

Bradley, J, Agazzi, L, Geskus, D, Ay, F, Worhoff, K & Pollnau, M 2008, Reactively co-sputtered Al₂O₃:Er³⁺ for active photonic devices. in P Tassin (ed.), 2008 Annual Workshop of the IEEE LEOS Benelux Chapter "Materials, Devices and Systems in Optics and Photonics. IEEE, Brussels, Belgium, pp. 9-10, 13th Annual Symposium of the IEEE/LEOS Benelux Chapter 2008, Enschede, Netherlands, 27/11/08.

Reactively co-sputtered Al₂O₃:Er³⁺ for active photonic devices. / Bradley, J.; Agazzi, L.; Geskus, D. et al.
2008 Annual Workshop of the IEEE LEOS Benelux Chapter "Materials, Devices and Systems in Optics and Photonics. ed. / P Tassin. Brussels, Belgium: IEEE, 2008. p. 9-10.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Reactively co-sputtered Al2O3:Er3+ for active photonic devices

AU - Bradley, J.

AU - Agazzi, L.

AU - Geskus, D.

AU - Ay, F.

AU - Worhoff, Kerstin

AU - Pollnau, Markus

N1 - Conference code: 13

PY - 2008/5/30

Y1 - 2008/5/30

N2 - Reactive co-sputtering has been applied as a low-cost method for deposition of $Al_2O_3:Er^{3+}$ layers. Channel waveguide fabrication has been optimized and results in waveguides with low background losses (0.21 dB/cm), demonstrating the feasibility of realizing active photonic devices. A net optical gain of 0.84 dB/cm for a 1533-nm signal has been obtained in a 700-nm-thick Er3+-doped $Al_2O_3$ waveguide pumped at 980 nm, which is the highest gain demonstrated thus far in this material.

AB - Reactive co-sputtering has been applied as a low-cost method for deposition of $Al_2O_3:Er^{3+}$ layers. Channel waveguide fabrication has been optimized and results in waveguides with low background losses (0.21 dB/cm), demonstrating the feasibility of realizing active photonic devices. A net optical gain of 0.84 dB/cm for a 1533-nm signal has been obtained in a 700-nm-thick Er3+-doped $Al_2O_3$ waveguide pumped at 980 nm, which is the highest gain demonstrated thus far in this material.

KW - IOMS-APD: Active Photonic Devices

KW - METIS-255135

KW - IR-65315

KW - EWI-14910

M3 - Conference contribution

SN - 978-90-9023255-3

SP - 9

EP - 10

BT - 2008 Annual Workshop of the IEEE LEOS Benelux Chapter "Materials, Devices and Systems in Optics and Photonics

A2 - Tassin, P

PB - IEEE

CY - Brussels, Belgium

T2 - 13th Annual Symposium of the IEEE/LEOS Benelux Chapter 2008

Y2 - 27 November 2008 through 28 November 2008

ER -