Realisation of a 0.25 μm NMOSFET using GexSi1-x(x≪0.4) as Gate Material

C. Salm*, J. Schmitz, M.C. Martens, D.J. Gravesteijn, J. Holleman, P.H. Woerlee

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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