Realization of a Thin Film High-Tc  π-SQUID

H. Hilgenkamp; R.R. Schulz; B. Chesca; B. Goetz; C.W. Schneider; A. Schmehl; H. Bielefeldt; J. Mannhart; C.C. Tsuei

Realization of a Thin Film High-Tc π-SQUID

H. Hilgenkamp, R.R. Schulz, B. Chesca, B. Goetz, C.W. Schneider, A. Schmehl, H. Bielefeldt, J. Mannhart, C.C. Tsuei

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Abstract

The predominantly dx2−y2 symmetry of the order parameter in most high-Tc superconductors provides the opportunity to construct novel Josephson junction circuits, in which part of the junctions are biased with a phase-difference of π. We present fabrication and measurements of an all high-Tc dc π superconducting quantum interference device (dc π-SQUID), realized in thin film technology on a tetracrystalline substrate [1]. This device contains a standard junction and a junction with a π-phase shift. The characteristics of the π-SQUID are compared with the properties of a standard high-Tc SQUID. The unique features of the π-SQUID offer important potential for applications. This work was supported by the BMBF (project number 13N6918/1).

Original language	English
Publication status	Published - 27 Mar 2000
Event	DPG Frühjahrstagung 2000 Regensburg: (DPG Spring Meeting) - Regensburg, Germany Duration: 27 Mar 2000 → 31 Mar 2000 https://www.dpg-verhandlungen.de/year/2000/conference/regensburg/parts?lang=de

Conference

Conference	DPG Frühjahrstagung 2000 Regensburg
Country/Territory	Germany
City	Regensburg
Period	27/03/00 → 31/03/00
Internet address	https://www.dpg-verhandlungen.de/year/2000/conference/regensburg/parts?lang=de

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title = "Realization of a Thin Film High-Tc π-SQUID",

abstract = "The predominantly dx2−y2 symmetry of the order parameter in most high-Tc superconductors provides the opportunity to construct novel Josephson junction circuits, in which part of the junctions are biased with a phase-difference of π. We present fabrication and measurements of an all high-Tc dc π superconducting quantum interference device (dc π-SQUID), realized in thin film technology on a tetracrystalline substrate [1]. This device contains a standard junction and a junction with a π-phase shift. The characteristics of the π-SQUID are compared with the properties of a standard high-Tc SQUID. The unique features of the π-SQUID offer important potential for applications. This work was supported by the BMBF (project number 13N6918/1).",

author = "H. Hilgenkamp and R.R. Schulz and B. Chesca and B. Goetz and C.W. Schneider and A. Schmehl and H. Bielefeldt and J. Mannhart and C.C. Tsuei",

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month = mar,

day = "27",

language = "English",

note = "DPG Fr{\"u}hjahrstagung 2000 Regensburg : (DPG Spring Meeting) ; Conference date: 27-03-2000 Through 31-03-2000",

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TY - CONF

T1 - Realization of a Thin Film High-Tc π-SQUID

AU - Hilgenkamp, H.

AU - Schulz, R.R.

AU - Chesca, B.

AU - Goetz, B.

AU - Schneider, C.W.

AU - Schmehl, A.

AU - Bielefeldt, H.

AU - Mannhart, J.

AU - Tsuei, C.C.

PY - 2000/3/27

Y1 - 2000/3/27

N2 - The predominantly dx2−y2 symmetry of the order parameter in most high-Tc superconductors provides the opportunity to construct novel Josephson junction circuits, in which part of the junctions are biased with a phase-difference of π. We present fabrication and measurements of an all high-Tc dc π superconducting quantum interference device (dc π-SQUID), realized in thin film technology on a tetracrystalline substrate [1]. This device contains a standard junction and a junction with a π-phase shift. The characteristics of the π-SQUID are compared with the properties of a standard high-Tc SQUID. The unique features of the π-SQUID offer important potential for applications. This work was supported by the BMBF (project number 13N6918/1).

AB - The predominantly dx2−y2 symmetry of the order parameter in most high-Tc superconductors provides the opportunity to construct novel Josephson junction circuits, in which part of the junctions are biased with a phase-difference of π. We present fabrication and measurements of an all high-Tc dc π superconducting quantum interference device (dc π-SQUID), realized in thin film technology on a tetracrystalline substrate [1]. This device contains a standard junction and a junction with a π-phase shift. The characteristics of the π-SQUID are compared with the properties of a standard high-Tc SQUID. The unique features of the π-SQUID offer important potential for applications. This work was supported by the BMBF (project number 13N6918/1).

M3 - Poster

T2 - DPG Frühjahrstagung 2000 Regensburg

Y2 - 27 March 2000 through 31 March 2000

ER -

Realization of a Thin Film High-Tc π-SQUID

Abstract

Conference

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