Realization of a Thin Film High-Tc π-SQUID

H. Hilgenkamp, R.R. Schulz, B. Chesca, B. Goetz, C.W. Schneider, A. Schmehl, H. Bielefeldt, J. Mannhart, C.C. Tsuei

    Research output: Contribution to conferencePosterOther research output

    8 Downloads (Pure)


    The predominantly dx2−y2 symmetry of the order parameter in most high-Tc superconductors provides the opportunity to construct novel Josephson junction circuits, in which part of the junctions are biased with a phase-difference of π. We present fabrication and measurements of an all high-Tc dc π superconducting quantum interference device (dc π-SQUID), realized in thin film technology on a tetracrystalline substrate [1]. This device contains a standard junction and a junction with a π-phase shift. The characteristics of the π-SQUID are compared with the properties of a standard high-Tc SQUID. The unique features of the π-SQUID offer important potential for applications. This work was supported by the BMBF (project number 13N6918/1).
    Original languageEnglish
    Publication statusPublished - 27 Mar 2000
    EventDPG Frühjahrstagung 2000 Regensburg: (DPG Spring Meeting) - Regensburg, Germany
    Duration: 27 Mar 200031 Mar 2000


    ConferenceDPG Frühjahrstagung 2000 Regensburg
    Internet address


    Dive into the research topics of 'Realization of a Thin Film High-Tc π-SQUID'. Together they form a unique fingerprint.

    Cite this