Record-low 4 m/spl Omega//spl middot/mm/sup 2/ specific on-resistance for 20V trench MOSFETs

M. A.A. In 't Zandt; E. A. Hijzen; R. J.E. Hueting; G. E.J. Koops

doi:10.1109/ISPSD.2003.1225224

Record-low 4 m/spl Omega//spl middot/mm/sup 2/ specific on-resistance for 20V trench MOSFETs

M. A.A. In 't Zandt^*, E. A. Hijzen, R. J.E. Hueting, G. E.J. Koops

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

10 Citations (Scopus)

Abstract

A process is shown by which both the specific on-resistance R _ds,on and the gate-drain charge density Q_gd can be reduced. Reduction of the R_ds,on is achieved by optimising the channel profile (p-body) towards a more box-shaped profile. The Q_gd is reduced by going to smaller trench dimensions below the I-line lithography limits, without using deep-UV lithography. For polygonal cell structures, it is shown that narrowing the trenches also gives further R_ds,on reduction. Record values for R_ds,on of 4 mω·mm ² (at V_gs = 10V) have been obtained for a 20V Trench MOSFET with a 2 μm cell pitch. Furthermore, for a 'conventional' 30V Trench MOSFET, we obtained an R_ds,on of 7 mω·mm² (at V_gs = 10V) by a more box-shaped p-body profile.

Original language	English
Title of host publication	ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings.
Publisher	IEEE
Pages	32-35
Number of pages	4
ISBN (Print)	0-7803-7876-8
DOIs	https://doi.org/10.1109/ISPSD.2003.1225224
Publication status	Published - 1 Sep 2003
Externally published	Yes
Event	15th International Symposium on Power Semiconductor Devices and ICs 2003 - Cambridge, United Kingdom Duration: 14 Jul 2003 → 17 Jul 2003 Conference number: 15

Conference

Conference	15th International Symposium on Power Semiconductor Devices and ICs 2003
Abbreviated title	ISPSD 2003
Country	United Kingdom
City	Cambridge
Period	14/07/03 → 17/07/03

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@inproceedings{6c6b28a6d5bd4fd89fbea81704e09f15,

title = "Record-low 4 m/spl Omega//spl middot/mm/sup 2/ specific on-resistance for 20V trench MOSFETs",

abstract = "A process is shown by which both the specific on-resistance R ds,on and the gate-drain charge density Qgd can be reduced. Reduction of the Rds,on is achieved by optimising the channel profile (p-body) towards a more box-shaped profile. The Qgd is reduced by going to smaller trench dimensions below the I-line lithography limits, without using deep-UV lithography. For polygonal cell structures, it is shown that narrowing the trenches also gives further Rds,on reduction. Record values for Rds,on of 4 mω·mm 2 (at Vgs = 10V) have been obtained for a 20V Trench MOSFET with a 2 μm cell pitch. Furthermore, for a 'conventional' 30V Trench MOSFET, we obtained an Rds,on of 7 mω·mm2 (at Vgs = 10V) by a more box-shaped p-body profile.",

author = "{In 't Zandt}, {M. A.A.} and Hijzen, {E. A.} and Hueting, {R. J.E.} and Koops, {G. E.J.}",

year = "2003",

month = sep,

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doi = "10.1109/ISPSD.2003.1225224",

language = "English",

isbn = "0-7803-7876-8",

pages = "32--35",

booktitle = "ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings.",

publisher = "IEEE",

address = "United States",

note = "15th International Symposium on Power Semiconductor Devices and ICs 2003, ISPSD 2003 ; Conference date: 14-07-2003 Through 17-07-2003",

}

In 't Zandt, MAA, Hijzen, EA, Hueting, RJE & Koops, GEJ 2003, Record-low 4 m/spl Omega//spl middot/mm/sup 2/ specific on-resistance for 20V trench MOSFETs. in ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings.. IEEE, pp. 32-35, 15th International Symposium on Power Semiconductor Devices and ICs 2003, Cambridge, United Kingdom, 14/07/03. https://doi.org/10.1109/ISPSD.2003.1225224

Record-low 4 m/spl Omega//spl middot/mm/sup 2/ specific on-resistance for 20V trench MOSFETs. / In 't Zandt, M. A.A.; Hijzen, E. A.; Hueting, R. J.E.; Koops, G. E.J.

ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings.. IEEE, 2003. p. 32-35.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - In 't Zandt, M. A.A.

AU - Hijzen, E. A.

AU - Hueting, R. J.E.

AU - Koops, G. E.J.

N1 - Conference code: 15

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N2 - A process is shown by which both the specific on-resistance R ds,on and the gate-drain charge density Qgd can be reduced. Reduction of the Rds,on is achieved by optimising the channel profile (p-body) towards a more box-shaped profile. The Qgd is reduced by going to smaller trench dimensions below the I-line lithography limits, without using deep-UV lithography. For polygonal cell structures, it is shown that narrowing the trenches also gives further Rds,on reduction. Record values for Rds,on of 4 mω·mm 2 (at Vgs = 10V) have been obtained for a 20V Trench MOSFET with a 2 μm cell pitch. Furthermore, for a 'conventional' 30V Trench MOSFET, we obtained an Rds,on of 7 mω·mm2 (at Vgs = 10V) by a more box-shaped p-body profile.

AB - A process is shown by which both the specific on-resistance R ds,on and the gate-drain charge density Qgd can be reduced. Reduction of the Rds,on is achieved by optimising the channel profile (p-body) towards a more box-shaped profile. The Qgd is reduced by going to smaller trench dimensions below the I-line lithography limits, without using deep-UV lithography. For polygonal cell structures, it is shown that narrowing the trenches also gives further Rds,on reduction. Record values for Rds,on of 4 mω·mm 2 (at Vgs = 10V) have been obtained for a 20V Trench MOSFET with a 2 μm cell pitch. Furthermore, for a 'conventional' 30V Trench MOSFET, we obtained an Rds,on of 7 mω·mm2 (at Vgs = 10V) by a more box-shaped p-body profile.

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ER -

Record-low 4 m/spl Omega//spl middot/mm/sup 2/ specific on-resistance for 20V trench MOSFETs

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