Abstract
A process is shown by which both the specific on-resistance R ds,on and the gate-drain charge density Qgd can be reduced. Reduction of the Rds,on is achieved by optimising the channel profile (p-body) towards a more box-shaped profile. The Qgd is reduced by going to smaller trench dimensions below the I-line lithography limits, without using deep-UV lithography. For polygonal cell structures, it is shown that narrowing the trenches also gives further Rds,on reduction. Record values for Rds,on of 4 mω·mm 2 (at Vgs = 10V) have been obtained for a 20V Trench MOSFET with a 2 μm cell pitch. Furthermore, for a 'conventional' 30V Trench MOSFET, we obtained an Rds,on of 7 mω·mm2 (at Vgs = 10V) by a more box-shaped p-body profile.
| Original language | English |
|---|---|
| Title of host publication | ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings. |
| Publisher | IEEE |
| Pages | 32-35 |
| Number of pages | 4 |
| ISBN (Print) | 0-7803-7876-8 |
| DOIs | |
| Publication status | Published - 1 Sep 2003 |
| Externally published | Yes |
| Event | 15th International Symposium on Power Semiconductor Devices and ICs 2003 - Cambridge, United Kingdom Duration: 14 Jul 2003 → 17 Jul 2003 Conference number: 15 |
Conference
| Conference | 15th International Symposium on Power Semiconductor Devices and ICs 2003 |
|---|---|
| Abbreviated title | ISPSD 2003 |
| Country | United Kingdom |
| City | Cambridge |
| Period | 14/07/03 → 17/07/03 |
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Record-low 4 m/spl Omega//spl middot/mm/sup 2/ specific on-resistance for 20V trench MOSFETs. / In 't Zandt, M. A.A.; Hijzen, E. A.; Hueting, R. J.E.; Koops, G. E.J.
ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings.. IEEE, 2003. p. 32-35.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review
TY - GEN
T1 - Record-low 4 m/spl Omega//spl middot/mm/sup 2/ specific on-resistance for 20V trench MOSFETs
AU - In 't Zandt, M. A.A.
AU - Hijzen, E. A.
AU - Hueting, R. J.E.
AU - Koops, G. E.J.
PY - 2003/9/1
Y1 - 2003/9/1
N2 - A process is shown by which both the specific on-resistance R ds,on and the gate-drain charge density Qgd can be reduced. Reduction of the Rds,on is achieved by optimising the channel profile (p-body) towards a more box-shaped profile. The Qgd is reduced by going to smaller trench dimensions below the I-line lithography limits, without using deep-UV lithography. For polygonal cell structures, it is shown that narrowing the trenches also gives further Rds,on reduction. Record values for Rds,on of 4 mω·mm 2 (at Vgs = 10V) have been obtained for a 20V Trench MOSFET with a 2 μm cell pitch. Furthermore, for a 'conventional' 30V Trench MOSFET, we obtained an Rds,on of 7 mω·mm2 (at Vgs = 10V) by a more box-shaped p-body profile.
AB - A process is shown by which both the specific on-resistance R ds,on and the gate-drain charge density Qgd can be reduced. Reduction of the Rds,on is achieved by optimising the channel profile (p-body) towards a more box-shaped profile. The Qgd is reduced by going to smaller trench dimensions below the I-line lithography limits, without using deep-UV lithography. For polygonal cell structures, it is shown that narrowing the trenches also gives further Rds,on reduction. Record values for Rds,on of 4 mω·mm 2 (at Vgs = 10V) have been obtained for a 20V Trench MOSFET with a 2 μm cell pitch. Furthermore, for a 'conventional' 30V Trench MOSFET, we obtained an Rds,on of 7 mω·mm2 (at Vgs = 10V) by a more box-shaped p-body profile.
UR - http://www.scopus.com/inward/record.url?scp=0042941448&partnerID=8YFLogxK
U2 - 10.1109/ISPSD.2003.1225224
DO - 10.1109/ISPSD.2003.1225224
M3 - Conference contribution
SN - 0-7803-7876-8
SP - 32
EP - 35
BT - ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings.
PB - IEEE
ER -