Record-low 4 m/spl Omega//spl middot/mm/sup 2/ specific on-resistance for 20V trench MOSFETs

M. A.A. In 't Zandt, E. A. Hijzen, R. J.E. Hueting, G. E.J. Koops

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

10 Citations (Scopus)

Abstract

A process is shown by which both the specific on-resistance R ds,on and the gate-drain charge density Qgd can be reduced. Reduction of the Rds,on is achieved by optimising the channel profile (p-body) towards a more box-shaped profile. The Qgd is reduced by going to smaller trench dimensions below the I-line lithography limits, without using deep-UV lithography. For polygonal cell structures, it is shown that narrowing the trenches also gives further Rds,on reduction. Record values for Rds,on of 4 mω·mm 2 (at Vgs = 10V) have been obtained for a 20V Trench MOSFET with a 2 μm cell pitch. Furthermore, for a 'conventional' 30V Trench MOSFET, we obtained an Rds,on of 7 mω·mm2 (at Vgs = 10V) by a more box-shaped p-body profile.

Original languageEnglish
Title of host publicationISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings.
PublisherIEEE
Pages32-35
Number of pages4
ISBN (Print)0-7803-7876-8
DOIs
Publication statusPublished - 1 Sep 2003
Externally publishedYes
Event15th International Symposium on Power Semiconductor Devices and ICs 2003 - Cambridge, United Kingdom
Duration: 14 Jul 200317 Jul 2003
Conference number: 15

Conference

Conference15th International Symposium on Power Semiconductor Devices and ICs 2003
Abbreviated titleISPSD 2003
CountryUnited Kingdom
CityCambridge
Period14/07/0317/07/03

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Lithography
Charge density

Cite this

In 't Zandt, M. A. A., Hijzen, E. A., Hueting, R. J. E., & Koops, G. E. J. (2003). Record-low 4 m/spl Omega//spl middot/mm/sup 2/ specific on-resistance for 20V trench MOSFETs. In ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings. (pp. 32-35). IEEE. https://doi.org/10.1109/ISPSD.2003.1225224
In 't Zandt, M. A.A. ; Hijzen, E. A. ; Hueting, R. J.E. ; Koops, G. E.J. / Record-low 4 m/spl Omega//spl middot/mm/sup 2/ specific on-resistance for 20V trench MOSFETs. ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings.. IEEE, 2003. pp. 32-35
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abstract = "A process is shown by which both the specific on-resistance R ds,on and the gate-drain charge density Qgd can be reduced. Reduction of the Rds,on is achieved by optimising the channel profile (p-body) towards a more box-shaped profile. The Qgd is reduced by going to smaller trench dimensions below the I-line lithography limits, without using deep-UV lithography. For polygonal cell structures, it is shown that narrowing the trenches also gives further Rds,on reduction. Record values for Rds,on of 4 mω·mm 2 (at Vgs = 10V) have been obtained for a 20V Trench MOSFET with a 2 μm cell pitch. Furthermore, for a 'conventional' 30V Trench MOSFET, we obtained an Rds,on of 7 mω·mm2 (at Vgs = 10V) by a more box-shaped p-body profile.",
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In 't Zandt, MAA, Hijzen, EA, Hueting, RJE & Koops, GEJ 2003, Record-low 4 m/spl Omega//spl middot/mm/sup 2/ specific on-resistance for 20V trench MOSFETs. in ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings.. IEEE, pp. 32-35, 15th International Symposium on Power Semiconductor Devices and ICs 2003, Cambridge, United Kingdom, 14/07/03. https://doi.org/10.1109/ISPSD.2003.1225224

Record-low 4 m/spl Omega//spl middot/mm/sup 2/ specific on-resistance for 20V trench MOSFETs. / In 't Zandt, M. A.A.; Hijzen, E. A.; Hueting, R. J.E.; Koops, G. E.J.

ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings.. IEEE, 2003. p. 32-35.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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In 't Zandt MAA, Hijzen EA, Hueting RJE, Koops GEJ. Record-low 4 m/spl Omega//spl middot/mm/sup 2/ specific on-resistance for 20V trench MOSFETs. In ISPSD '03. 2003 IEEE 15th International Symposium on Power Semiconductor Devices and ICs, 2003. Proceedings.. IEEE. 2003. p. 32-35 https://doi.org/10.1109/ISPSD.2003.1225224