Record RF performance of standard 90 nm CMOS technology

L.F. Tiemeijer, R.J. Havens, R. de Kort, A.J. Scholten, R van Langevelde, D.B.M. Klaassen, G.T. Sasse, Y. Bouttement, C. Petot, S. Bardy, D. Gloria, P. Scheer, S. Boret, B. van Haaren, C. Clement, J-F. Larchanche, I-S. Lim, A. Duvallet, A. Zlotnicka

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    We have optimized 3 key RF devices realized in standard logic 90 nm CMOS technology and report a record performance in terms of n-MOS maximum oscillation frequency f/sub max/ (280 GHz), varactor tuning range and varactor and inductor quality factor.
    Original languageUndefined
    Title of host publicationIEEE International Electron Devices Meeting 2004
    Place of PublicationPiscataway
    PublisherIEEE Computer Society Press
    Number of pages4
    ISBN (Print)0780386841
    Publication statusPublished - 25 Apr 2005
    Event2004 IEEE International Electron Devices Meeting, IEDM 2004 - San Francisco, United States
    Duration: 13 Dec 200415 Dec 2004

    Publication series

    PublisherIEEE Computer Society Press


    Conference2004 IEEE International Electron Devices Meeting, IEDM 2004
    Abbreviated titleIEDM
    CountryUnited States
    CitySan Francisco


    • METIS-219036
    • radiofrequency integrated circuits
    • EWI-15529
    • IR-67491
    • Q-factor
    • CMOS logic circuits
    • nano electronics

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