Record RF performance of standard 90 nm CMOS technology

L.F. Tiemeijer, R.J. Havens, R. de Kort, A.J. Scholten, R van Langevelde, D.B.M. Klaassen, G.T. Sasse, Y. Bouttement, C. Petot, S. Bardy, D. Gloria, P. Scheer, S. Boret, B. van Haaren, C. Clement, J-F. Larchanche, I-S. Lim, A. Duvallet, A. Zlotnicka

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    Abstract

    We have optimized 3 key RF devices realized in standard logic 90 nm CMOS technology and report a record performance in terms of n-MOS maximum oscillation frequency f/sub max/ (280 GHz), varactor tuning range and varactor and inductor quality factor.
    Original languageUndefined
    Title of host publicationIEEE International Electron Devices Meeting 2004
    Place of PublicationPiscataway
    PublisherIEEE Computer Society Press
    Pages441-444
    Number of pages4
    ISBN (Print)0780386841
    DOIs
    Publication statusPublished - 25 Apr 2005
    Event2004 IEEE International Electron Devices Meeting, IEDM 2004 - San Francisco, United States
    Duration: 13 Dec 200415 Dec 2004

    Publication series

    Name
    PublisherIEEE Computer Society Press

    Conference

    Conference2004 IEEE International Electron Devices Meeting, IEDM 2004
    Abbreviated titleIEDM
    CountryUnited States
    CitySan Francisco
    Period13/12/0415/12/04

    Keywords

    • METIS-219036
    • radiofrequency integrated circuits
    • EWI-15529
    • IR-67491
    • Q-factor
    • CMOS logic circuits
    • nano electronics

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