Recovery after hot-carrier injection: Slow versus fast traps

Maurits J. de Jong; Cora Salm; Jurriaan Schmitz

doi:10.1016/j.microrel.2019.06.010

Recovery after hot-carrier injection: Slow versus fast traps

Maurits J. de Jong^*, Cora Salm, Jurriaan Schmitz

^*Corresponding author for this work

Integrated Devices and Systems

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Long-channel nMOSFETs have been electrically degraded by hot-carrier injection and the recovery at a temperature of T = 85 °C in air has been investigated. Charge-pumping measurements have been performed in combination of IV measurements to distinguish between interface defects, deeper defects and charge detrapping. The recovery rate of ΔV_t is increased by a temperature step (presumably due to charge detrapping), however the recovery of the charge pumping current seems to follow the universal relaxation curve used for BTI at T = 85 °C, regardless of the stress temperature of the device. The recovery of the charge pumping current is mainly attributed to the repassivation of fast interface defects and deeper (border) traps may also play a (smaller) role in the recovery phase.

Original language	English
Article number	113318
Number of pages	5
Journal	Microelectronics reliability
Volume	100-101
DOIs	https://doi.org/10.1016/j.microrel.2019.06.010
Publication status	Published - 23 Sept 2019

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10.1016/j.microrel.2019.06.010

Recovery After Hot-Carrier Injection Slow versus Fast TrapsAccepted author version, 1.15 MBLicence: CC BY-NC-ND

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@article{6cb74e383d9b45259ced72401b1bb041,

title = "Recovery after hot-carrier injection: Slow versus fast traps",

abstract = "Long-channel nMOSFETs have been electrically degraded by hot-carrier injection and the recovery at a temperature of T = 85 °C in air has been investigated. Charge-pumping measurements have been performed in combination of IV measurements to distinguish between interface defects, deeper defects and charge detrapping. The recovery rate of ΔVt is increased by a temperature step (presumably due to charge detrapping), however the recovery of the charge pumping current seems to follow the universal relaxation curve used for BTI at T = 85 °C, regardless of the stress temperature of the device. The recovery of the charge pumping current is mainly attributed to the repassivation of fast interface defects and deeper (border) traps may also play a (smaller) role in the recovery phase.",

author = "{de Jong}, {Maurits J.} and Cora Salm and Jurriaan Schmitz",

year = "2019",

month = sep,

day = "23",

doi = "10.1016/j.microrel.2019.06.010",

language = "English",

volume = "100-101",

journal = "Microelectronics reliability",

issn = "0026-2714",

publisher = "Elsevier Ltd",

}

TY - JOUR

T1 - Recovery after hot-carrier injection

T2 - Slow versus fast traps

AU - de Jong, Maurits J.

AU - Salm, Cora

AU - Schmitz, Jurriaan

PY - 2019/9/23

Y1 - 2019/9/23

N2 - Long-channel nMOSFETs have been electrically degraded by hot-carrier injection and the recovery at a temperature of T = 85 °C in air has been investigated. Charge-pumping measurements have been performed in combination of IV measurements to distinguish between interface defects, deeper defects and charge detrapping. The recovery rate of ΔVt is increased by a temperature step (presumably due to charge detrapping), however the recovery of the charge pumping current seems to follow the universal relaxation curve used for BTI at T = 85 °C, regardless of the stress temperature of the device. The recovery of the charge pumping current is mainly attributed to the repassivation of fast interface defects and deeper (border) traps may also play a (smaller) role in the recovery phase.

AB - Long-channel nMOSFETs have been electrically degraded by hot-carrier injection and the recovery at a temperature of T = 85 °C in air has been investigated. Charge-pumping measurements have been performed in combination of IV measurements to distinguish between interface defects, deeper defects and charge detrapping. The recovery rate of ΔVt is increased by a temperature step (presumably due to charge detrapping), however the recovery of the charge pumping current seems to follow the universal relaxation curve used for BTI at T = 85 °C, regardless of the stress temperature of the device. The recovery of the charge pumping current is mainly attributed to the repassivation of fast interface defects and deeper (border) traps may also play a (smaller) role in the recovery phase.

UR - http://www.scopus.com/inward/record.url?scp=85074666313&partnerID=8YFLogxK

U2 - 10.1016/j.microrel.2019.06.010

DO - 10.1016/j.microrel.2019.06.010

M3 - Article

AN - SCOPUS:85074666313

SN - 0026-2714

VL - 100-101

JO - Microelectronics reliability

JF - Microelectronics reliability

M1 - 113318

ER -

Recovery after hot-carrier injection: Slow versus fast traps

Abstract

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