Recovery after hot-carrier injection: Slow versus fast traps

Maurits J. de Jong*, Cora Salm, Jurriaan Schmitz

*Corresponding author for this work

    Research output: Contribution to journalArticleAcademicpeer-review

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    Abstract

    Long-channel nMOSFETs have been electrically degraded by hot-carrier injection and the recovery at a temperature of T = 85 °C in air has been investigated. Charge-pumping measurements have been performed in combination of IV measurements to distinguish between interface defects, deeper defects and charge detrapping. The recovery rate of ΔVt is increased by a temperature step (presumably due to charge detrapping), however the recovery of the charge pumping current seems to follow the universal relaxation curve used for BTI at T = 85 °C, regardless of the stress temperature of the device. The recovery of the charge pumping current is mainly attributed to the repassivation of fast interface defects and deeper (border) traps may also play a (smaller) role in the recovery phase.

    Original languageEnglish
    Article number113318
    Number of pages5
    JournalMicroelectronics reliability
    Volume100-101
    Early online date23 Sep 2019
    DOIs
    Publication statusE-pub ahead of print/First online - 23 Sep 2019

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    Hot carriers
    carrier injection
    recovery
    traps
    Recovery
    pumping
    Defects
    defects
    borders
    Temperature
    temperature
    air
    curves
    Air

    Cite this

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    title = "Recovery after hot-carrier injection: Slow versus fast traps",
    abstract = "Long-channel nMOSFETs have been electrically degraded by hot-carrier injection and the recovery at a temperature of T = 85 °C in air has been investigated. Charge-pumping measurements have been performed in combination of IV measurements to distinguish between interface defects, deeper defects and charge detrapping. The recovery rate of ΔVt is increased by a temperature step (presumably due to charge detrapping), however the recovery of the charge pumping current seems to follow the universal relaxation curve used for BTI at T = 85 °C, regardless of the stress temperature of the device. The recovery of the charge pumping current is mainly attributed to the repassivation of fast interface defects and deeper (border) traps may also play a (smaller) role in the recovery phase.",
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    Recovery after hot-carrier injection : Slow versus fast traps. / de Jong, Maurits J.; Salm, Cora; Schmitz, Jurriaan.

    In: Microelectronics reliability, Vol. 100-101, 113318, 23.09.2019.

    Research output: Contribution to journalArticleAcademicpeer-review

    TY - JOUR

    T1 - Recovery after hot-carrier injection

    T2 - Slow versus fast traps

    AU - de Jong, Maurits J.

    AU - Salm, Cora

    AU - Schmitz, Jurriaan

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    AB - Long-channel nMOSFETs have been electrically degraded by hot-carrier injection and the recovery at a temperature of T = 85 °C in air has been investigated. Charge-pumping measurements have been performed in combination of IV measurements to distinguish between interface defects, deeper defects and charge detrapping. The recovery rate of ΔVt is increased by a temperature step (presumably due to charge detrapping), however the recovery of the charge pumping current seems to follow the universal relaxation curve used for BTI at T = 85 °C, regardless of the stress temperature of the device. The recovery of the charge pumping current is mainly attributed to the repassivation of fast interface defects and deeper (border) traps may also play a (smaller) role in the recovery phase.

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