Redeposition-Free Deep Etching in Small KY(WO4)2 Samples

Simen Martinussen; Raimond N. Frentrop; Meindert Dijkstra; Sonia Garcia-blanco

doi:10.3390/mi11121033

Redeposition-Free Deep Etching in Small KY(WO₄)₂ Samples

Simen Martinussen^*, Raimond N. Frentrop, Meindert Dijkstra, Sonia Garcia-blanco

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

1 Citation (Scopus)

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Abstract

KY(WO₄)₂ is a promising material for on-chip laser sources. Deep etching of small KY(WO₄)₂ samples in combination with various thin film deposition techniques is desirable for the manufacturing of such devices. There are, however, several difficulties that need to be overcome before deep etching of KY(WO₄)₂ can be realized in small samples in a reproducible manner. In this paper, we address the problems of (i) edge bead formation when using thick resist on small samples, (ii) sample damage during lithography mask touchdown, (iii) resist reticulation during prolonged argon-based inductively coupled plasma reactive ion etching (ICP-RIE), and (iv) redeposited material on the feature sidewalls. We demonstrate the etching of 6.5 µm deep features and the removal of redeposited material using a wet etch procedure. This process will enable the realization of waveguides both in ion-irradiated KY(WO₄)₂ as well as thin KY(WO₄)₂ membranes transferred onto glass substrate by bonding and subsequent polishing.

Original language	English
Article number	1033
Pages (from-to)	1-15
Number of pages	15
Journal	Micromachines
Volume	11
Issue number	12
DOIs	https://doi.org/10.3390/mi11121033
Publication status	Published - 24 Nov 2020

Keywords

Edge bead
Etching
Fabrication
Hard mask
Integrated optics
KY(WO )
KYW
Redeposition
Reticulation
Tungstate
hard mask
KY(WO4)(2)
UT-Gold-D

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ArticleFinal published version, 4.84 MBLicence: CC BY

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title = "Redeposition-Free Deep Etching in Small KY(WO4)2 Samples",

abstract = "KY(WO4)2 is a promising material for on-chip laser sources. Deep etching of small KY(WO4)2 samples in combination with various thin film deposition techniques is desirable for the manufacturing of such devices. There are, however, several difficulties that need to be overcome before deep etching of KY(WO4)2 can be realized in small samples in a reproducible manner. In this paper, we address the problems of (i) edge bead formation when using thick resist on small samples, (ii) sample damage during lithography mask touchdown, (iii) resist reticulation during prolonged argon-based inductively coupled plasma reactive ion etching (ICP-RIE), and (iv) redeposited material on the feature sidewalls. We demonstrate the etching of 6.5 µm deep features and the removal of redeposited material using a wet etch procedure. This process will enable the realization of waveguides both in ion-irradiated KY(WO4)2 as well as thin KY(WO4)2 membranes transferred onto glass substrate by bonding and subsequent polishing.",

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author = "Simen Martinussen and Frentrop, {Raimond N.} and Meindert Dijkstra and Sonia Garcia-blanco",

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AU - Martinussen, Simen

AU - Frentrop, Raimond N.

AU - Dijkstra, Meindert

AU - Garcia-blanco, Sonia

PY - 2020/11/24

Y1 - 2020/11/24

N2 - KY(WO4)2 is a promising material for on-chip laser sources. Deep etching of small KY(WO4)2 samples in combination with various thin film deposition techniques is desirable for the manufacturing of such devices. There are, however, several difficulties that need to be overcome before deep etching of KY(WO4)2 can be realized in small samples in a reproducible manner. In this paper, we address the problems of (i) edge bead formation when using thick resist on small samples, (ii) sample damage during lithography mask touchdown, (iii) resist reticulation during prolonged argon-based inductively coupled plasma reactive ion etching (ICP-RIE), and (iv) redeposited material on the feature sidewalls. We demonstrate the etching of 6.5 µm deep features and the removal of redeposited material using a wet etch procedure. This process will enable the realization of waveguides both in ion-irradiated KY(WO4)2 as well as thin KY(WO4)2 membranes transferred onto glass substrate by bonding and subsequent polishing.

AB - KY(WO4)2 is a promising material for on-chip laser sources. Deep etching of small KY(WO4)2 samples in combination with various thin film deposition techniques is desirable for the manufacturing of such devices. There are, however, several difficulties that need to be overcome before deep etching of KY(WO4)2 can be realized in small samples in a reproducible manner. In this paper, we address the problems of (i) edge bead formation when using thick resist on small samples, (ii) sample damage during lithography mask touchdown, (iii) resist reticulation during prolonged argon-based inductively coupled plasma reactive ion etching (ICP-RIE), and (iv) redeposited material on the feature sidewalls. We demonstrate the etching of 6.5 µm deep features and the removal of redeposited material using a wet etch procedure. This process will enable the realization of waveguides both in ion-irradiated KY(WO4)2 as well as thin KY(WO4)2 membranes transferred onto glass substrate by bonding and subsequent polishing.

KW - Edge bead

KW - Etching

KW - Fabrication

KW - Hard mask

KW - Integrated optics

KW - KY(WO )

KW - KYW

KW - Redeposition

KW - Reticulation

KW - Tungstate

KW - hard mask

KW - KY(WO4)(2)

KW - UT-Gold-D

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JF - Micromachines

SN - 2072-666X

IS - 12

M1 - 1033

ER -

Redeposition-Free Deep Etching in Small KY(WO₄)₂ Samples

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Keywords

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