Reduced sidewall effects in SiGe-base bipolar transistors

R. J.E. Hueting; J. W. Slotboom

Reduced sidewall effects in SiGe-base bipolar transistors

R. J.E. Hueting^*, J. W. Slotboom

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

2 Citations (Scopus)

24 Downloads (Pure)

Abstract

In small Si bipolar transistors (BJTs) the sidewall effects play an important role. Extensive device simulations on Si/SiGe/Si heterojunction bipolar transistors (HBTs) and Si BJTs show that in the HBTs the sidewall current injection is strongly suppressed. Consequently, the current gain in the HBT keeps constant down to a much smaller emitter width (W_e ¿ 0.20 ¿m) than for a conventional Si transistor (W_e ¿ 0.60 ¿m). Although the ratio of the charge storage in the sidewall emitter-base region and charge storage in the intrinsic region is also much less in the HBT than it is in the BJT, the effect on the cutoff frequency is about the same just because of the suppressed current spreading.

Original language	English
Title of host publication	ESSDERC '94: 24th European Solid State Device Research Conference
Editors	Peter Ashburn, Chris Hill
Publisher	IEEE
Pages	67-70
Number of pages	4
ISBN (Print)	2-86332-157-9
Publication status	Published - 1994
Externally published	Yes
Event	24th European Solid State Device Research Conference, ESSDERC 1994 - Edinburgh, United Kingdom Duration: 11 Sept 1994 → 15 Sept 1994 Conference number: 24

Conference

Conference	24th European Solid State Device Research Conference, ESSDERC 1994
Abbreviated title	ESSDERC 1994
Country/Territory	United Kingdom
City	Edinburgh
Period	11/09/94 → 15/09/94

Access to Document

reducedFinal published version, 444 KB

https://ieeexplore.ieee.org/document/5435671/authors#authors

Cite this

@inproceedings{f05981ad749640ecb5b4b1e336dd4bc0,

title = "Reduced sidewall effects in SiGe-base bipolar transistors",

abstract = "In small Si bipolar transistors (BJTs) the sidewall effects play an important role. Extensive device simulations on Si/SiGe/Si heterojunction bipolar transistors (HBTs) and Si BJTs show that in the HBTs the sidewall current injection is strongly suppressed. Consequently, the current gain in the HBT keeps constant down to a much smaller emitter width (We ¿ 0.20 ¿m) than for a conventional Si transistor (We ¿ 0.60 ¿m). Although the ratio of the charge storage in the sidewall emitter-base region and charge storage in the intrinsic region is also much less in the HBT than it is in the BJT, the effect on the cutoff frequency is about the same just because of the suppressed current spreading.",

author = "Hueting, {R. J.E.} and Slotboom, {J. W.}",

year = "1994",

language = "English",

isbn = "2-86332-157-9",

pages = "67--70",

editor = "Peter Ashburn and Chris Hill",

booktitle = "ESSDERC '94: 24th European Solid State Device Research Conference",

publisher = "IEEE",

address = "United States",

note = "24th European Solid State Device Research Conference, ESSDERC 1994, ESSDERC 1994 ; Conference date: 11-09-1994 Through 15-09-1994",

}

Hueting, RJE & Slotboom, JW 1994, Reduced sidewall effects in SiGe-base bipolar transistors. in P Ashburn & C Hill (eds), ESSDERC '94: 24th European Solid State Device Research Conference., 5435671, IEEE, pp. 67-70, 24th European Solid State Device Research Conference, ESSDERC 1994, Edinburgh, United Kingdom, 11/09/94. <https://ieeexplore.ieee.org/document/5435671/authors#authors>

TY - GEN

T1 - Reduced sidewall effects in SiGe-base bipolar transistors

AU - Hueting, R. J.E.

AU - Slotboom, J. W.

N1 - Conference code: 24

PY - 1994

Y1 - 1994

N2 - In small Si bipolar transistors (BJTs) the sidewall effects play an important role. Extensive device simulations on Si/SiGe/Si heterojunction bipolar transistors (HBTs) and Si BJTs show that in the HBTs the sidewall current injection is strongly suppressed. Consequently, the current gain in the HBT keeps constant down to a much smaller emitter width (We ¿ 0.20 ¿m) than for a conventional Si transistor (We ¿ 0.60 ¿m). Although the ratio of the charge storage in the sidewall emitter-base region and charge storage in the intrinsic region is also much less in the HBT than it is in the BJT, the effect on the cutoff frequency is about the same just because of the suppressed current spreading.

AB - In small Si bipolar transistors (BJTs) the sidewall effects play an important role. Extensive device simulations on Si/SiGe/Si heterojunction bipolar transistors (HBTs) and Si BJTs show that in the HBTs the sidewall current injection is strongly suppressed. Consequently, the current gain in the HBT keeps constant down to a much smaller emitter width (We ¿ 0.20 ¿m) than for a conventional Si transistor (We ¿ 0.60 ¿m). Although the ratio of the charge storage in the sidewall emitter-base region and charge storage in the intrinsic region is also much less in the HBT than it is in the BJT, the effect on the cutoff frequency is about the same just because of the suppressed current spreading.

UR - http://www.scopus.com/inward/record.url?scp=4344675927&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:4344675927

SN - 2-86332-157-9

SP - 67

EP - 70

BT - ESSDERC '94: 24th European Solid State Device Research Conference

A2 - Ashburn, Peter

A2 - Hill, Chris

PB - IEEE

T2 - 24th European Solid State Device Research Conference, ESSDERC 1994

Y2 - 11 September 1994 through 15 September 1994

ER -

Reduced sidewall effects in SiGe-base bipolar transistors

Abstract

Conference

Access to Document

Other files and links

Fingerprint

Cite this