Reduced sidewall effects in SiGe-base bipolar transistors

R. J.E. Hueting*, J. W. Slotboom

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)
3 Downloads (Pure)

Abstract

In small Si bipolar transistors (BJTs) the sidewall effects play an important role. Extensive device simulations on Si/SiGe/Si heterojunction bipolar transistors (HBTs) and Si BJTs show that in the HBTs the sidewall current injection is strongly suppressed. Consequently, the current gain in the HBT keeps constant down to a much smaller emitter width (We ¿ 0.20 ¿m) than for a conventional Si transistor (We ¿ 0.60 ¿m). Although the ratio of the charge storage in the sidewall emitter-base region and charge storage in the intrinsic region is also much less in the HBT than it is in the BJT, the effect on the cutoff frequency is about the same just because of the suppressed current spreading.

Original languageEnglish
Title of host publicationESSDERC '94: 24th European Solid State Device Research Conference
EditorsPeter Ashburn, Chris Hill
PublisherIEEE Computer Society
Pages67-70
Number of pages4
ISBN (Print)2-86332-157-9
Publication statusPublished - 1994
Externally publishedYes
Event24th European Solid State Device Research Conference, ESSDERC 1994 - Edinburgh, United Kingdom
Duration: 11 Sep 199415 Sep 1994
Conference number: 24

Conference

Conference24th European Solid State Device Research Conference, ESSDERC 1994
Abbreviated titleESSDERC 1994
CountryUnited Kingdom
CityEdinburgh
Period11/09/9415/09/94

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  • Cite this

    Hueting, R. J. E., & Slotboom, J. W. (1994). Reduced sidewall effects in SiGe-base bipolar transistors. In P. Ashburn, & C. Hill (Eds.), ESSDERC '94: 24th European Solid State Device Research Conference (pp. 67-70). [5435671] IEEE Computer Society.