Reduced temperature dependence of hot carrier degradation in deuterated nMOSFETs

Cora Salm, A.J. Hof, F.G. Kuper, Jurriaan Schmitz

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    Abstract

    Deuterated oxides exhibit prolonged hot carrier lifetimes at room temperature. We report evidence that this improved hot carrier hardness exists over the temperature range between -25 °C and 200 °C. However, the benefit of deuterium incorporation deceases with increasing stress temperature. Furthermore the $V_T$ -shift shows a remarkable absence of temperature dependence for the deuterated samples. The results are compared to the existing vibration-relaxation model.
    Original languageUndefined
    Article number10.1016/j.microrel.2006.08.004
    Pages (from-to)1617-1622
    Number of pages6
    JournalMicroelectronics reliability
    Volume46
    Issue number2/9-11
    DOIs
    Publication statusPublished - Nov 2006

    Keywords

    • SC-ICRY: Integrated Circuit Reliability and Yield
    • METIS-238168
    • IR-63431
    • EWI-6909

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