Deuterated oxides exhibit prolonged hot carrier lifetimes at room temperature. We report evidence that this improved hot carrier hardness exists over the temperature range between -25 °C and 200 °C. However, the benefit of deuterium incorporation deceases with increasing stress temperature. Furthermore the $V_T$ -shift shows a remarkable absence of temperature dependence for the deuterated samples. The results are compared to the existing vibration-relaxation model.
|Number of pages||6|
|Publication status||Published - Nov 2006|
- SC-ICRY: Integrated Circuit Reliability and Yield