Reduced temperature dependence of hot carrier degradation in deuterated nMOSFETs

Cora Salm; A.J. Hof; F.G. Kuper; Jurriaan Schmitz

doi:10.1016/j.microrel.2006.08.004

Reduced temperature dependence of hot carrier degradation in deuterated nMOSFETs

Cora Salm, A.J. Hof, F.G. Kuper, Jurriaan Schmitz

Research output: Contribution to journal › Article › Academic › peer-review

1 Citation (Scopus)

Abstract

Deuterated oxides exhibit prolonged hot carrier lifetimes at room temperature. We report evidence that this improved hot carrier hardness exists over the temperature range between -25 °C and 200 °C. However, the benefit of deuterium incorporation deceases with increasing stress temperature. Furthermore the $V_T$ -shift shows a remarkable absence of temperature dependence for the deuterated samples. The results are compared to the existing vibration-relaxation model.

Original language	Undefined
Article number	10.1016/j.microrel.2006.08.004
Pages (from-to)	1617-1622
Number of pages	6
Journal	Microelectronics reliability
Volume	46
Issue number	2/9-11
DOIs	https://doi.org/10.1016/j.microrel.2006.08.004
Publication status	Published - Nov 2006

Keywords

SC-ICRY: Integrated Circuit Reliability and Yield
METIS-238168
IR-63431
EWI-6909

Access to Document

10.1016/j.microrel.2006.08.004

http://eprints.eemcs.utwente.nl/secure2/6909/01/salm_micr_rel.pdf

Cite this

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title = "Reduced temperature dependence of hot carrier degradation in deuterated nMOSFETs",

abstract = "Deuterated oxides exhibit prolonged hot carrier lifetimes at room temperature. We report evidence that this improved hot carrier hardness exists over the temperature range between -25 °C and 200 °C. However, the benefit of deuterium incorporation deceases with increasing stress temperature. Furthermore the $V_T$ -shift shows a remarkable absence of temperature dependence for the deuterated samples. The results are compared to the existing vibration-relaxation model.",

keywords = "SC-ICRY: Integrated Circuit Reliability and Yield, METIS-238168, IR-63431, EWI-6909",

author = "Cora Salm and A.J. Hof and F.G. Kuper and Jurriaan Schmitz",

note = "10.1016/j.microrel.2006.08.004 ",

year = "2006",

month = nov,

doi = "10.1016/j.microrel.2006.08.004",

language = "Undefined",

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T1 - Reduced temperature dependence of hot carrier degradation in deuterated nMOSFETs

AU - Salm, Cora

AU - Hof, A.J.

AU - Kuper, F.G.

AU - Schmitz, Jurriaan

N1 - 10.1016/j.microrel.2006.08.004

PY - 2006/11

Y1 - 2006/11

N2 - Deuterated oxides exhibit prolonged hot carrier lifetimes at room temperature. We report evidence that this improved hot carrier hardness exists over the temperature range between -25 °C and 200 °C. However, the benefit of deuterium incorporation deceases with increasing stress temperature. Furthermore the $V_T$ -shift shows a remarkable absence of temperature dependence for the deuterated samples. The results are compared to the existing vibration-relaxation model.

AB - Deuterated oxides exhibit prolonged hot carrier lifetimes at room temperature. We report evidence that this improved hot carrier hardness exists over the temperature range between -25 °C and 200 °C. However, the benefit of deuterium incorporation deceases with increasing stress temperature. Furthermore the $V_T$ -shift shows a remarkable absence of temperature dependence for the deuterated samples. The results are compared to the existing vibration-relaxation model.

KW - SC-ICRY: Integrated Circuit Reliability and Yield

KW - METIS-238168

KW - IR-63431

KW - EWI-6909

U2 - 10.1016/j.microrel.2006.08.004

DO - 10.1016/j.microrel.2006.08.004

M3 - Article

VL - 46

SP - 1617

EP - 1622

JO - Microelectronics reliability

JF - Microelectronics reliability

SN - 0026-2714

IS - 2/9-11

M1 - 10.1016/j.microrel.2006.08.004

ER -