Reduction of 1/f Noise by Switched Biasing: an Overview

Eric Klumperink, Arnoud van der Wel, Jay Kolhatkar, Eric Hoekstra, Cora Salm, Hans Wallinga, Bram Nauta

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

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Abstract

MOSFETs are notorious for having strong low frequency noise (1/f noise or flicker noise). In the late 90's we discovered that this noise can be reduced if you periodically switch the bias on and off. This lead to a STW research project "Reduction of 1/f Noise in MOSFETs by Switched Bias Techniques" (TEL.4756), in which we tried to model the effect of large signal excitation on LF noise and explore its application perspective. This paper gives an overview of the main results obtained during this project. We found that the reduction of LF noise is related to capture and emission of electrons in traps, which renders Random Telegraph Noise (RTS noise). The effect of large signal excitation on LF noise can be modeled by making capture and emission time-constants dependent on the instantaneous bias voltage. We were able to show that the energy distribution of traps in the band-gap determines whether there will be significant noise reduction or not.
Original languageEnglish
Title of host publication16th Workshop on Circuits, Systems and Signal Processing, ProRISC 2005
Place of PublicationUtrecht
PublisherSTW
Pages307-315
Number of pages9
ISBN (Print)90-73461-50-2
Publication statusPublished - Nov 2005
Event16th Workshop on Circuits, Systems and Signal Processing, ProRISC 2005 - Veldhoven, Netherlands
Duration: 17 Nov 200518 Nov 2005
Conference number: 16

Workshop

Workshop16th Workshop on Circuits, Systems and Signal Processing, ProRISC 2005
CountryNetherlands
CityVeldhoven
Period17/11/0518/11/05

Fingerprint

field effect transistors
traps
flicker
noise reduction
time constant
excitation
electric potential
electrons

Keywords

  • RTS noise
  • Noise reduction
  • Flicker noise
  • Switched biasing
  • CMOS
  • Low frequency noise
  • MOSFET
  • 1/f noise

Cite this

Klumperink, E., van der Wel, A., Kolhatkar, J., Hoekstra, E., Salm, C., Wallinga, H., & Nauta, B. (2005). Reduction of 1/f Noise by Switched Biasing: an Overview. In 16th Workshop on Circuits, Systems and Signal Processing, ProRISC 2005 (pp. 307-315). Utrecht: STW.
Klumperink, Eric ; van der Wel, Arnoud ; Kolhatkar, Jay ; Hoekstra, Eric ; Salm, Cora ; Wallinga, Hans ; Nauta, Bram. / Reduction of 1/f Noise by Switched Biasing : an Overview. 16th Workshop on Circuits, Systems and Signal Processing, ProRISC 2005. Utrecht : STW, 2005. pp. 307-315
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title = "Reduction of 1/f Noise by Switched Biasing: an Overview",
abstract = "MOSFETs are notorious for having strong low frequency noise (1/f noise or flicker noise). In the late 90's we discovered that this noise can be reduced if you periodically switch the bias on and off. This lead to a STW research project {"}Reduction of 1/f Noise in MOSFETs by Switched Bias Techniques{"} (TEL.4756), in which we tried to model the effect of large signal excitation on LF noise and explore its application perspective. This paper gives an overview of the main results obtained during this project. We found that the reduction of LF noise is related to capture and emission of electrons in traps, which renders Random Telegraph Noise (RTS noise). The effect of large signal excitation on LF noise can be modeled by making capture and emission time-constants dependent on the instantaneous bias voltage. We were able to show that the energy distribution of traps in the band-gap determines whether there will be significant noise reduction or not.",
keywords = "RTS noise, Noise reduction, Flicker noise, Switched biasing, CMOS, Low frequency noise, MOSFET, 1/f noise",
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Klumperink, E, van der Wel, A, Kolhatkar, J, Hoekstra, E, Salm, C, Wallinga, H & Nauta, B 2005, Reduction of 1/f Noise by Switched Biasing: an Overview. in 16th Workshop on Circuits, Systems and Signal Processing, ProRISC 2005. STW, Utrecht, pp. 307-315, 16th Workshop on Circuits, Systems and Signal Processing, ProRISC 2005, Veldhoven, Netherlands, 17/11/05.

Reduction of 1/f Noise by Switched Biasing : an Overview. / Klumperink, Eric; van der Wel, Arnoud; Kolhatkar, Jay; Hoekstra, Eric; Salm, Cora; Wallinga, Hans; Nauta, Bram.

16th Workshop on Circuits, Systems and Signal Processing, ProRISC 2005. Utrecht : STW, 2005. p. 307-315.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

TY - GEN

T1 - Reduction of 1/f Noise by Switched Biasing

T2 - an Overview

AU - Klumperink, Eric

AU - van der Wel, Arnoud

AU - Kolhatkar, Jay

AU - Hoekstra, Eric

AU - Salm, Cora

AU - Wallinga, Hans

AU - Nauta, Bram

PY - 2005/11

Y1 - 2005/11

N2 - MOSFETs are notorious for having strong low frequency noise (1/f noise or flicker noise). In the late 90's we discovered that this noise can be reduced if you periodically switch the bias on and off. This lead to a STW research project "Reduction of 1/f Noise in MOSFETs by Switched Bias Techniques" (TEL.4756), in which we tried to model the effect of large signal excitation on LF noise and explore its application perspective. This paper gives an overview of the main results obtained during this project. We found that the reduction of LF noise is related to capture and emission of electrons in traps, which renders Random Telegraph Noise (RTS noise). The effect of large signal excitation on LF noise can be modeled by making capture and emission time-constants dependent on the instantaneous bias voltage. We were able to show that the energy distribution of traps in the band-gap determines whether there will be significant noise reduction or not.

AB - MOSFETs are notorious for having strong low frequency noise (1/f noise or flicker noise). In the late 90's we discovered that this noise can be reduced if you periodically switch the bias on and off. This lead to a STW research project "Reduction of 1/f Noise in MOSFETs by Switched Bias Techniques" (TEL.4756), in which we tried to model the effect of large signal excitation on LF noise and explore its application perspective. This paper gives an overview of the main results obtained during this project. We found that the reduction of LF noise is related to capture and emission of electrons in traps, which renders Random Telegraph Noise (RTS noise). The effect of large signal excitation on LF noise can be modeled by making capture and emission time-constants dependent on the instantaneous bias voltage. We were able to show that the energy distribution of traps in the band-gap determines whether there will be significant noise reduction or not.

KW - RTS noise

KW - Noise reduction

KW - Flicker noise

KW - Switched biasing

KW - CMOS

KW - Low frequency noise

KW - MOSFET

KW - 1/f noise

M3 - Conference contribution

SN - 90-73461-50-2

SP - 307

EP - 315

BT - 16th Workshop on Circuits, Systems and Signal Processing, ProRISC 2005

PB - STW

CY - Utrecht

ER -

Klumperink E, van der Wel A, Kolhatkar J, Hoekstra E, Salm C, Wallinga H et al. Reduction of 1/f Noise by Switched Biasing: an Overview. In 16th Workshop on Circuits, Systems and Signal Processing, ProRISC 2005. Utrecht: STW. 2005. p. 307-315