Reduction of 1/f Noise by Switched Biasing: an Overview

Eric Klumperink; Arnoud van der Wel; Jay Kolhatkar; Eric Hoekstra; Cora Salm; Hans Wallinga; Bram Nauta

Reduction of 1/f Noise by Switched Biasing: an Overview

Eric Klumperink, Arnoud van der Wel, Jay Kolhatkar, Eric Hoekstra, Cora Salm, Hans Wallinga, Bram Nauta

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

3414 Downloads (Pure)

Abstract

MOSFETs are notorious for having strong low frequency noise (1/f noise or flicker noise). In the late 90's we discovered that this noise can be reduced if you periodically switch the bias on and off. This lead to a STW research project "Reduction of 1/f Noise in MOSFETs by Switched Bias Techniques" (TEL.4756), in which we tried to model the effect of large signal excitation on LF noise and explore its application perspective. This paper gives an overview of the main results obtained during this project. We found that the reduction of LF noise is related to capture and emission of electrons in traps, which renders Random Telegraph Noise (RTS noise). The effect of large signal excitation on LF noise can be modeled by making capture and emission time-constants dependent on the instantaneous bias voltage. We were able to show that the energy distribution of traps in the band-gap determines whether there will be significant noise reduction or not.

Original language	English
Title of host publication	16th Workshop on Circuits, Systems and Signal Processing, ProRISC 2005
Place of Publication	Utrecht
Publisher	STW
Pages	307-315
Number of pages	9
ISBN (Print)	90-73461-50-2
Publication status	Published - Nov 2005
Event	16th Workshop on Circuits, Systems and Signal Processing, ProRISC 2005 - Veldhoven, Netherlands Duration: 17 Nov 2005 → 18 Nov 2005 Conference number: 16

Workshop

Workshop	16th Workshop on Circuits, Systems and Signal Processing, ProRISC 2005
Country/Territory	Netherlands
City	Veldhoven
Period	17/11/05 → 18/11/05

Keywords

RTS noise
Noise reduction
Flicker noise
Switched biasing
CMOS
Low frequency noise
MOSFET
1/f noise

Access to Document

Klumperink05reductionFinal published version, 279 KB

Cite this

@inproceedings{2813b2cdb34240fb9deead31cd78d5c6,

title = "Reduction of 1/f Noise by Switched Biasing: an Overview",

abstract = "MOSFETs are notorious for having strong low frequency noise (1/f noise or flicker noise). In the late 90's we discovered that this noise can be reduced if you periodically switch the bias on and off. This lead to a STW research project {"}Reduction of 1/f Noise in MOSFETs by Switched Bias Techniques{"} (TEL.4756), in which we tried to model the effect of large signal excitation on LF noise and explore its application perspective. This paper gives an overview of the main results obtained during this project. We found that the reduction of LF noise is related to capture and emission of electrons in traps, which renders Random Telegraph Noise (RTS noise). The effect of large signal excitation on LF noise can be modeled by making capture and emission time-constants dependent on the instantaneous bias voltage. We were able to show that the energy distribution of traps in the band-gap determines whether there will be significant noise reduction or not.",

keywords = "RTS noise, Noise reduction, Flicker noise, Switched biasing, CMOS, Low frequency noise, MOSFET, 1/f noise",

author = "Eric Klumperink and {van der Wel}, Arnoud and Jay Kolhatkar and Eric Hoekstra and Cora Salm and Hans Wallinga and Bram Nauta",

year = "2005",

month = nov,

language = "English",

isbn = "90-73461-50-2",

pages = "307--315",

booktitle = "16th Workshop on Circuits, Systems and Signal Processing, ProRISC 2005",

publisher = "STW",

note = "16th Workshop on Circuits, Systems and Signal Processing, ProRISC 2005 ; Conference date: 17-11-2005 Through 18-11-2005",

}

TY - GEN

T1 - Reduction of 1/f Noise by Switched Biasing

T2 - 16th Workshop on Circuits, Systems and Signal Processing, ProRISC 2005

AU - Klumperink, Eric

AU - van der Wel, Arnoud

AU - Kolhatkar, Jay

AU - Hoekstra, Eric

AU - Salm, Cora

AU - Wallinga, Hans

AU - Nauta, Bram

N1 - Conference code: 16

PY - 2005/11

Y1 - 2005/11

N2 - MOSFETs are notorious for having strong low frequency noise (1/f noise or flicker noise). In the late 90's we discovered that this noise can be reduced if you periodically switch the bias on and off. This lead to a STW research project "Reduction of 1/f Noise in MOSFETs by Switched Bias Techniques" (TEL.4756), in which we tried to model the effect of large signal excitation on LF noise and explore its application perspective. This paper gives an overview of the main results obtained during this project. We found that the reduction of LF noise is related to capture and emission of electrons in traps, which renders Random Telegraph Noise (RTS noise). The effect of large signal excitation on LF noise can be modeled by making capture and emission time-constants dependent on the instantaneous bias voltage. We were able to show that the energy distribution of traps in the band-gap determines whether there will be significant noise reduction or not.

AB - MOSFETs are notorious for having strong low frequency noise (1/f noise or flicker noise). In the late 90's we discovered that this noise can be reduced if you periodically switch the bias on and off. This lead to a STW research project "Reduction of 1/f Noise in MOSFETs by Switched Bias Techniques" (TEL.4756), in which we tried to model the effect of large signal excitation on LF noise and explore its application perspective. This paper gives an overview of the main results obtained during this project. We found that the reduction of LF noise is related to capture and emission of electrons in traps, which renders Random Telegraph Noise (RTS noise). The effect of large signal excitation on LF noise can be modeled by making capture and emission time-constants dependent on the instantaneous bias voltage. We were able to show that the energy distribution of traps in the band-gap determines whether there will be significant noise reduction or not.

KW - RTS noise

KW - Noise reduction

KW - Flicker noise

KW - Switched biasing

KW - CMOS

KW - Low frequency noise

KW - MOSFET

KW - 1/f noise

M3 - Conference contribution

SN - 90-73461-50-2

SP - 307

EP - 315

BT - 16th Workshop on Circuits, Systems and Signal Processing, ProRISC 2005

PB - STW

CY - Utrecht

Y2 - 17 November 2005 through 18 November 2005

ER -

Reduction of 1/f Noise by Switched Biasing: an Overview

Abstract

Workshop

Keywords

Access to Document

Fingerprint

Cite this