Reduction of 1/f Noise in MOSFETS by Switched Bias Techniques

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    Abstract

    Switched Biasing is presented as a technique for reducing the 1/f noise in MOSFETS. It exploits an intriguing physical effect: cycling a MOS transistor from strong inversion to accumulation reduces its 1/f noise!! The history of the discovery of the effect and the main experimental results obtained so far will be reviewed.
    Original languageEnglish
    Title of host publicationProceedings of the 9th IEEE/ProRISC Workshop on Circuits, Systems and Signal Processing
    EditorsJean Pierre Veen
    Place of PublicationMierlo The Netherlands
    Pages285-290
    Number of pages6
    Publication statusPublished - 30 Nov 1998
    Event9th ProRISC/IEEE workshop on Circuits, Systems and Signal Processing, CSSP 1998 - Mierlo, The Netherlands, Utrecht, Netherlands
    Duration: 25 Nov 199827 Nov 1998
    Conference number: 9

    Conference

    Conference9th ProRISC/IEEE workshop on Circuits, Systems and Signal Processing, CSSP 1998
    Abbreviated titleCSSP
    CountryNetherlands
    CityUtrecht
    Period25/11/9827/11/98

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  • Cite this

    Klumperink, E. A. M., Gierkink, S. L. J., Wallinga, H., & Nauta, B. (1998). Reduction of 1/f Noise in MOSFETS by Switched Bias Techniques. In J. P. Veen (Ed.), Proceedings of the 9th IEEE/ProRISC Workshop on Circuits, Systems and Signal Processing (pp. 285-290). Mierlo The Netherlands.