Switched Biasing is presented as a technique for reducing the 1/f noise in MOSFETS. It exploits an intriguing physical effect: cycling a MOS transistor from strong inversion to accumulation reduces its 1/f noise!! The history of the discovery of the effect and the main experimental results obtained so far will be reviewed.
|Title of host publication||Proceedings of the 9th IEEE/ProRISC Workshop on Circuits, Systems and Signal Processing|
|Editors||Jean Pierre Veen|
|Place of Publication||Mierlo The Netherlands|
|Number of pages||6|
|Publication status||Published - 30 Nov 1998|
|Event||9th ProRISC/IEEE workshop on Circuits, Systems and Signal Processing, CSSP 1998 - Mierlo, The Netherlands, Utrecht, Netherlands|
Duration: 25 Nov 1998 → 27 Nov 1998
Conference number: 9
|Conference||9th ProRISC/IEEE workshop on Circuits, Systems and Signal Processing, CSSP 1998|
|Period||25/11/98 → 27/11/98|
Klumperink, E. A. M., Gierkink, S. L. J., Wallinga, H., & Nauta, B. (1998). Reduction of 1/f Noise in MOSFETS by Switched Bias Techniques. In J. P. Veen (Ed.), Proceedings of the 9th IEEE/ProRISC Workshop on Circuits, Systems and Signal Processing (pp. 285-290). Mierlo The Netherlands.