Reduction of hydrogen-induced optical losses of plasma-enhanced chemical vapor deposition silicon oxynitride by phosphorus doping and heat treatment

M.G. Hussein, Kerstin Worhoff, G. Sengo, A. Driessen

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    Abstract

    Plasma enhanced chemical vapor deposition phosphoros-doped silicon oxynitride (SiON) layers with a refractive index of 1.505 were deposited from $N_{2}O$, 2% $SiH_{4}/N_{2}$, and 5% $PH_{3}/Ar$ gaseous mixtures. The $PH_{3}/Ar$ flow rate was varied to investigate the effect of the dopant to the layer properties. We studied the compositions and the chemical environment of phosphorus, silicon, oxygen, nitrogen and hydrogen in these layers by using x-ray photoelectron spectroscopy and Fourier transform infrared spectroscopy. The number of N-H and O-H bonds, which are responsible for optical losses around 1.55 and 1.3 μm, decreases in the as-deposited layers with increasing phosphorus concentration. Furthermore, the bonded hyrogen in all P-doped layers has been eliminated after annealing at a temperature significantly lower than required for undoped silicon oxynitride layers, that is so to say 1000°C instead of 1150°C. The resulting optical loss in the entire third telecommunication window was well below 0.2dB/cm, making P-doped SiON an attractive material for demanding integrated optics applications.
    Original languageEnglish
    Article number023517
    Pages (from-to)023517/1-023517/6
    Number of pages6
    JournalJournal of Applied Physics
    Volume101
    Issue number2/2
    DOIs
    Publication statusPublished - 15 Jan 2007

    Keywords

    • METIS-241549
    • IOMS-PIT: PHOTONICS INTEGRATION TECHNOLOGY
    • EWI-9549
    • IR-67023

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