Reduction of interlayer thickness by low-temperature deposition of Mo/Si multilayer mirrors for X-ray reflection

V.I.T.A. de Rooij-Lohmann; A.E. Yakshin; E. Zoethout; J. Verhoeven; F. Bijkerk

doi:10.1016/j.apsusc.2011.02.054

Reduction of interlayer thickness by low-temperature deposition of Mo/Si multilayer mirrors for X-ray reflection

V.I.T.A. de Rooij-Lohmann^*, A.E. Yakshin, E. Zoethout, J. Verhoeven, F. Bijkerk

^*Corresponding author for this work

Laser Physics & Nonlinear Optics

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Abstract

Thin interlayers are essential for high-quality multilayer optics. We present the first investigation of reducing the interlayer thickness of Mo/Si multilayer structures by cooling the substrate with liquid nitrogen during the deposition. The structures were deposited by means of electron beam evaporation. Even after warming up to room temperature prior to analysis, the interlayers that formed upon cryogenic deposition were found to be approximately 60% thinner compared to room temperature deposition. The interlayer thickness reduction at low temperature and its preservation upon warming up are attributed to a lower mobility of adatoms, reduced surface segregation of Si during Mo-on-Si growth, and/or crystallization of Mo.

Original language	English
Pages (from-to)	6251-6255
Number of pages	5
Journal	Applied surface science
Volume	257
Issue number	14
DOIs	https://doi.org/10.1016/j.apsusc.2011.02.054
Publication status	Published - 2011

Keywords

2023 OA procedure

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10.1016/j.apsusc.2011.02.054

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Reduction of interlayer thickness by low-temperature deposition of Mo/Si multilayer mirrors for X-ray reflection
de Rooij-Lohmann, V. I. T. A., Yakshin, A. E., Zoethout, E., Verhoeven, J. & Bijkerk, F., 14 Feb 2010. 1 p.
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abstract = "Thin interlayers are essential for high-quality multilayer optics. We present the first investigation of reducing the interlayer thickness of Mo/Si multilayer structures by cooling the substrate with liquid nitrogen during the deposition. The structures were deposited by means of electron beam evaporation. Even after warming up to room temperature prior to analysis, the interlayers that formed upon cryogenic deposition were found to be approximately 60% thinner compared to room temperature deposition. The interlayer thickness reduction at low temperature and its preservation upon warming up are attributed to a lower mobility of adatoms, reduced surface segregation of Si during Mo-on-Si growth, and/or crystallization of Mo.",

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AU - de Rooij-Lohmann, V.I.T.A.

AU - Yakshin, A.E.

AU - Zoethout, E.

AU - Verhoeven, J.

AU - Bijkerk, F.

PY - 2011

Y1 - 2011

N2 - Thin interlayers are essential for high-quality multilayer optics. We present the first investigation of reducing the interlayer thickness of Mo/Si multilayer structures by cooling the substrate with liquid nitrogen during the deposition. The structures were deposited by means of electron beam evaporation. Even after warming up to room temperature prior to analysis, the interlayers that formed upon cryogenic deposition were found to be approximately 60% thinner compared to room temperature deposition. The interlayer thickness reduction at low temperature and its preservation upon warming up are attributed to a lower mobility of adatoms, reduced surface segregation of Si during Mo-on-Si growth, and/or crystallization of Mo.

AB - Thin interlayers are essential for high-quality multilayer optics. We present the first investigation of reducing the interlayer thickness of Mo/Si multilayer structures by cooling the substrate with liquid nitrogen during the deposition. The structures were deposited by means of electron beam evaporation. Even after warming up to room temperature prior to analysis, the interlayers that formed upon cryogenic deposition were found to be approximately 60% thinner compared to room temperature deposition. The interlayer thickness reduction at low temperature and its preservation upon warming up are attributed to a lower mobility of adatoms, reduced surface segregation of Si during Mo-on-Si growth, and/or crystallization of Mo.

KW - 2023 OA procedure

U2 - 10.1016/j.apsusc.2011.02.054

DO - 10.1016/j.apsusc.2011.02.054

M3 - Article

SN - 0169-4332

VL - 257

SP - 6251

EP - 6255

JO - Applied surface science

JF - Applied surface science

IS - 14

ER -

Reduction of interlayer thickness by low-temperature deposition of Mo/Si multilayer mirrors for X-ray reflection

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Reduction of interlayer thickness by low-temperature deposition of Mo/Si multilayer mirrors for X-ray reflection

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