Reduction of Intrinsic 1/f Device Noise in a CMOS Ring Oscillator

Sander L.J. Gierkink, Eric A.M. Klumperink, T.J. Ikkink, T.J. Ikkink, Adrianus Johannes Maria van Tuijl

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    11 Citations (Scopus)
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    The implications of intrinsic 1/f device noise reduction in MOS transistors due to periodic on-off switching in a CMOS ring oscillator are explored. It is shown that maximising the amplitude of oscillation helps to reduce the close-in phase noise. Measurement results, corrected for amplitude-dependent upconversion and effective bias show an improvement of 8 dB in phase noise at 1KHz frequency offset from the carrier at 4.5 dB increase in carrier power.
    Original languageUndefined
    Title of host publicationProceeding of the 24th European Solid-State Circuits Conference
    Place of PublicationThe Hague The Netherlands
    Number of pages4
    ISBN (Print)2-86332-235-4
    Publication statusPublished - 30 Sep 1998
    Event24th European Solid-State Circuits Conference, ESSCIRC 1998 - The Hague, Netherlands
    Duration: 22 Sep 199824 Sep 1998
    Conference number: 24

    Publication series



    Conference24th European Solid-State Circuits Conference, ESSCIRC 1998
    Abbreviated titleESSCIRC
    CityThe Hague


    • METIS-112851
    • IR-15969

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