Reduction of Intrinsic 1/f Device Noise in a CMOS Ring Oscillator

Sander L.J. Gierkink; Eric A.M. Klumperink; T.J. Ikkink; T.J. Ikkink; Adrianus Johannes Maria van Tuijl

Reduction of Intrinsic 1/f Device Noise in a CMOS Ring Oscillator

Sander L.J. Gierkink, Eric A.M. Klumperink, T.J. Ikkink, T.J. Ikkink, Adrianus Johannes Maria van Tuijl

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

12 Citations (Scopus)

204 Downloads (Pure)

Abstract

The implications of intrinsic 1/f device noise reduction in MOS transistors due to periodic on-off switching in a CMOS ring oscillator are explored. It is shown that maximising the amplitude of oscillation helps to reduce the close-in phase noise. Measurement results, corrected for amplitude-dependent upconversion and effective bias show an improvement of 8 dB in phase noise at 1KHz frequency offset from the carrier at 4.5 dB increase in carrier power.

Original language	Undefined
Title of host publication	Proceeding of the 24th European Solid-State Circuits Conference
Place of Publication	The Hague The Netherlands
Publisher	IEEE
Pages	272-275
Number of pages	4
ISBN (Print)	2-86332-235-4
Publication status	Published - 30 Sept 1998
Event	24th European Solid-State Circuits Conference, ESSCIRC 1998 - The Hague, Netherlands Duration: 22 Sept 1998 → 24 Sept 1998 Conference number: 24

Publication series

Name
Publisher	IEEE

Conference

Conference	24th European Solid-State Circuits Conference, ESSCIRC 1998
Abbreviated title	ESSCIRC
Country/Territory	Netherlands
City	The Hague
Period	22/09/98 → 24/09/98

Keywords

METIS-112851
IR-15969

Access to Document

01471018

Cite this

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title = "Reduction of Intrinsic 1/f Device Noise in a CMOS Ring Oscillator",

abstract = "The implications of intrinsic 1/f device noise reduction in MOS transistors due to periodic on-off switching in a CMOS ring oscillator are explored. It is shown that maximising the amplitude of oscillation helps to reduce the close-in phase noise. Measurement results, corrected for amplitude-dependent upconversion and effective bias show an improvement of 8 dB in phase noise at 1KHz frequency offset from the carrier at 4.5 dB increase in carrier power.",

keywords = "METIS-112851, IR-15969",

author = "Gierkink, {Sander L.J.} and Klumperink, {Eric A.M.} and T.J. Ikkink and T.J. Ikkink and {van Tuijl}, {Adrianus Johannes Maria}",

year = "1998",

month = sep,

day = "30",

language = "Undefined",

isbn = "2-86332-235-4",

publisher = "IEEE",

pages = "272--275",

booktitle = "Proceeding of the 24th European Solid-State Circuits Conference",

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note = "24th European Solid-State Circuits Conference, ESSCIRC 1998 ; Conference date: 22-09-1998 Through 24-09-1998",

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T1 - Reduction of Intrinsic 1/f Device Noise in a CMOS Ring Oscillator

AU - Gierkink, Sander L.J.

AU - Klumperink, Eric A.M.

AU - Ikkink, T.J.

AU - van Tuijl, Adrianus Johannes Maria

N1 - Conference code: 24

PY - 1998/9/30

Y1 - 1998/9/30

N2 - The implications of intrinsic 1/f device noise reduction in MOS transistors due to periodic on-off switching in a CMOS ring oscillator are explored. It is shown that maximising the amplitude of oscillation helps to reduce the close-in phase noise. Measurement results, corrected for amplitude-dependent upconversion and effective bias show an improvement of 8 dB in phase noise at 1KHz frequency offset from the carrier at 4.5 dB increase in carrier power.

AB - The implications of intrinsic 1/f device noise reduction in MOS transistors due to periodic on-off switching in a CMOS ring oscillator are explored. It is shown that maximising the amplitude of oscillation helps to reduce the close-in phase noise. Measurement results, corrected for amplitude-dependent upconversion and effective bias show an improvement of 8 dB in phase noise at 1KHz frequency offset from the carrier at 4.5 dB increase in carrier power.

KW - METIS-112851

KW - IR-15969

M3 - Conference contribution

SN - 2-86332-235-4

SP - 272

EP - 275

BT - Proceeding of the 24th European Solid-State Circuits Conference

PB - IEEE

CY - The Hague The Netherlands

T2 - 24th European Solid-State Circuits Conference, ESSCIRC 1998

Y2 - 22 September 1998 through 24 September 1998

ER -