Reduction of Intrinsic 1/f Device Noise in a CMOS Ring Oscillator

Sander L.J. Gierkink; Eric A.M. Klumperink; Ton J. Ikkink; Ed J.M. van Tuijl

doi:10.1109/ESSCIR.1998.186261

Reduction of Intrinsic 1/f Device Noise in a CMOS Ring Oscillator

Sander L.J. Gierkink
, Eric A.M. Klumperink
, Ton J. Ikkink
, Ed J.M. van Tuijl

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

13 Citations (Scopus)

463 Downloads (Pure)

Abstract

The implications of intrinsic 1/f device noise reduction in MOS transistors due to periodic on-off switching in a CMOS ring oscillator are explored. It is shown that maximising the amplitude of oscillation helps to reduce the close-in phase noise. Measurement results, corrected for amplitude-dependent upconversion and effective bias show an improvement of 8 dB in phase noise at 1KHz frequency offset from the carrier at 4.5 dB increase in carrier power.

Original language	English
Title of host publication	Proceeding of the 24th European Solid-State Circuits Conference, ESSCIR 1998
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	272-275
Number of pages	4
ISBN (Print)	2-86332-235-4
DOIs	https://doi.org/10.1109/ESSCIR.1998.186261
Publication status	Published - 30 Sept 1998
Event	24th European Solid-State Circuits Conference, ESSCIRC 1998 - The Hague, Netherlands Duration: 22 Sept 1998 → 24 Sept 1998 Conference number: 24

Conference

Conference	24th European Solid-State Circuits Conference, ESSCIRC 1998
Abbreviated title	ESSCIRC
Country/Territory	Netherlands
City	The Hague
Period	22/09/98 → 24/09/98

Keywords

2020 OA procedure

Access to Document

10.1109/ESSCIR.1998.186261

ArticleFinal published version, 366 KBLicence: Taverne

Cite this

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title = "Reduction of Intrinsic 1/f Device Noise in a CMOS Ring Oscillator",

abstract = "The implications of intrinsic 1/f device noise reduction in MOS transistors due to periodic on-off switching in a CMOS ring oscillator are explored. It is shown that maximising the amplitude of oscillation helps to reduce the close-in phase noise. Measurement results, corrected for amplitude-dependent upconversion and effective bias show an improvement of 8 dB in phase noise at 1KHz frequency offset from the carrier at 4.5 dB increase in carrier power.",

keywords = "2020 OA procedure",

author = "Gierkink, \{Sander L.J.\} and Klumperink, \{Eric A.M.\} and Ikkink, \{Ton J.\} and \{van Tuijl\}, \{Ed J.M.\}",

year = "1998",

month = sep,

day = "30",

doi = "10.1109/ESSCIR.1998.186261",

language = "English",

isbn = "2-86332-235-4",

pages = "272--275",

booktitle = "Proceeding of the 24th European Solid-State Circuits Conference, ESSCIR 1998",

publisher = "IEEE",

address = "United States",

note = "24th European Solid-State Circuits Conference, ESSCIRC 1998, ESSCIRC ; Conference date: 22-09-1998 Through 24-09-1998",

}

Gierkink, SLJ, Klumperink, EAM, Ikkink, TJ & van Tuijl, EJM 1998, Reduction of Intrinsic 1/f Device Noise in a CMOS Ring Oscillator. in Proceeding of the 24th European Solid-State Circuits Conference, ESSCIR 1998. IEEE, Piscataway, NJ, pp. 272-275, 24th European Solid-State Circuits Conference, ESSCIRC 1998, The Hague, Netherlands, 22/09/98. https://doi.org/10.1109/ESSCIR.1998.186261

Reduction of Intrinsic 1/f Device Noise in a CMOS Ring Oscillator. / Gierkink, Sander L.J.; Klumperink, Eric A.M.; Ikkink, Ton J. et al.
Proceeding of the 24th European Solid-State Circuits Conference, ESSCIR 1998. Piscataway, NJ: IEEE, 1998. p. 272-275.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Reduction of Intrinsic 1/f Device Noise in a CMOS Ring Oscillator

AU - Gierkink, Sander L.J.

AU - Klumperink, Eric A.M.

AU - Ikkink, Ton J.

AU - van Tuijl, Ed J.M.

N1 - Conference code: 24

PY - 1998/9/30

Y1 - 1998/9/30

N2 - The implications of intrinsic 1/f device noise reduction in MOS transistors due to periodic on-off switching in a CMOS ring oscillator are explored. It is shown that maximising the amplitude of oscillation helps to reduce the close-in phase noise. Measurement results, corrected for amplitude-dependent upconversion and effective bias show an improvement of 8 dB in phase noise at 1KHz frequency offset from the carrier at 4.5 dB increase in carrier power.

AB - The implications of intrinsic 1/f device noise reduction in MOS transistors due to periodic on-off switching in a CMOS ring oscillator are explored. It is shown that maximising the amplitude of oscillation helps to reduce the close-in phase noise. Measurement results, corrected for amplitude-dependent upconversion and effective bias show an improvement of 8 dB in phase noise at 1KHz frequency offset from the carrier at 4.5 dB increase in carrier power.

KW - 2020 OA procedure

U2 - 10.1109/ESSCIR.1998.186261

DO - 10.1109/ESSCIR.1998.186261

M3 - Conference contribution

SN - 2-86332-235-4

SP - 272

EP - 275

BT - Proceeding of the 24th European Solid-State Circuits Conference, ESSCIR 1998

PB - IEEE

CY - Piscataway, NJ

T2 - 24th European Solid-State Circuits Conference, ESSCIRC 1998

Y2 - 22 September 1998 through 24 September 1998

ER -

Reduction of Intrinsic 1/f Device Noise in a CMOS Ring Oscillator

Abstract

Conference

Keywords

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