Reduction of secondary defect formation in MeV As-ion implanted Si(100)

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Original language	English
Pages (from-to)	614-618
Number of pages	0
Journal	Nuclear instruments and methods in physics research. Section B : Beam interactions with materials and atoms
Volume	59-60
Issue number	Part 1
DOIs	https://doi.org/10.1016/0168-583X(91)95288-O
Publication status	Published - 1991
Externally published	Yes

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@article{fdb9d8f490e3436185cfe36aee0d7b22,

title = "Reduction of secondary defect formation in MeV As-ion implanted Si(100)",

author = "R.J. Schreutelkamp and W.X. Lu and J.R. Liefting and V. Raineri and J.S. Custer and F.W. Saris",

year = "1991",

doi = "10.1016/0168-583X(91)95288-O",

language = "English",

volume = "59-60",

pages = "614--618",

journal = "Nuclear instruments and methods in physics research. Section B : Beam interactions with materials and atoms",

issn = "0168-583X",

publisher = "Elsevier",

number = "Part 1",

}

TY - JOUR

T1 - Reduction of secondary defect formation in MeV As-ion implanted Si(100)

AU - Schreutelkamp, R.J.

AU - Lu, W.X.

AU - Liefting, J.R.

AU - Raineri, V.

AU - Custer, J.S.

AU - Saris, F.W.

PY - 1991

Y1 - 1991

U2 - 10.1016/0168-583X(91)95288-O

DO - 10.1016/0168-583X(91)95288-O

M3 - Article

SN - 0168-583X

VL - 59-60

SP - 614

EP - 618

JO - Nuclear instruments and methods in physics research. Section B : Beam interactions with materials and atoms

JF - Nuclear instruments and methods in physics research. Section B : Beam interactions with materials and atoms

IS - Part 1

ER -