Reduction of the 1/f Noise Induced Phase Noise in a CMOS Ring Oscillator by Increasing the Amplitude of Oscillation

S.L.J. Gierkink, A. van der Wel, G. Hoogzaad, E.A.M. Klumperink, A.J.M. van Tuijl

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    6 Citations (Scopus)
    163 Downloads (Pure)

    Abstract

    Spectrum measurement results of a CMOS ring oscillator are presented that show a 10 dB decrease in 1/f noise induced phase noise at a 2 dB increase in carrier power. Simple ring oscillator theory predicts that the 1/f noise induced phase noise is independent of carrier power. It is shown that an increase in the amplitude of oscillation is accompanied by a reduction of the intrinsic 1/f noise of the periodically switched MOS transistors in the ring. A net reduction of the 1/f noise of a periodically switched NMOS transistor of more than 12 dB is measured in the baseband
    Original languageEnglish
    Title of host publication1998 IEEE International Symposium on Circuits and Systems (ISCAS)
    Place of PublicationPiscataway, NJ
    PublisherIEEE
    Number of pages4
    Volume1
    ISBN (Print)0-7803-4455-3
    DOIs
    Publication statusPublished - 31 May 1998
    EventIEEE International Symposium on Circuits and Systems, ISCAS 1998 - Monterey, United States
    Duration: 31 May 19983 Jun 1998

    Conference

    ConferenceIEEE International Symposium on Circuits and Systems, ISCAS 1998
    Abbreviated titleISCAS
    Country/TerritoryUnited States
    CityMonterey
    Period31/05/983/06/98

    Fingerprint

    Dive into the research topics of 'Reduction of the 1/f Noise Induced Phase Noise in a CMOS Ring Oscillator by Increasing the Amplitude of Oscillation'. Together they form a unique fingerprint.

    Cite this