Reduction of the 1/f Noise Induced Phase Noise in a CMOS Ring Oscillator by Increasing the Amplitude of Oscillation

Sander L.J. Gierkink; A.P. van der Wel; G. Hoogzaad; G. Hoogzaad; Eric A.M. Klumperink; Adrianus Johannes Maria van Tuijl

doi:10.1109/ISCAS.1998.704241

Reduction of the 1/f Noise Induced Phase Noise in a CMOS Ring Oscillator by Increasing the Amplitude of Oscillation

Sander L.J. Gierkink, A.P. van der Wel, G. Hoogzaad, G. Hoogzaad, Eric A.M. Klumperink, Adrianus Johannes Maria van Tuijl

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

6 Citations (Scopus)

136 Downloads (Pure)

Abstract

Spectrum measurement results of a CMOS ring oscillator are presented that show a 10 dB decrease in 1/f noise induced phase noise at a 2 dB increase in carrier power. Simple ring oscillator theory predicts that the 1/f noise induced phase noise is independent of carrier power. It is shown that an increase in the amplitude of oscillation is accompanied by a reduction of the intrinsic 1/f noise of the periodically switched MOS transistors in the ring. A net reduction of the 1/f noise of a periodically switched NMOS transistor of more than 12 dB is measured in the baseband

Original language	Undefined
Title of host publication	1998 IEEE International Symposium on Circuits and Systems
Place of Publication	Monterey USA
Publisher	IEEE
Pages	-
ISBN (Print)	CD ROM
DOIs	https://doi.org/10.1109/ISCAS.1998.704241
Publication status	Published - 31 May 1998
Event	IEEE International Symposium on Circuits and Systems, ISCAS 1998 - Monterey, USA Duration: 31 May 1998 → 3 Jun 1998

Publication series

Name
Publisher	IEEE
Volume	1

Conference

Conference	IEEE International Symposium on Circuits and Systems, ISCAS 1998
Period	31/05/98 → 3/06/98
Other	May 31 - June 3, 1998

Keywords

IR-15962
METIS-112844

Access to Document

10.1109/ISCAS.1998.704241

Reduction_noise__-_gierkink

Cite this

@inproceedings{2973a6370ae94247a898438f4b4ca387,

title = "Reduction of the 1/f Noise Induced Phase Noise in a CMOS Ring Oscillator by Increasing the Amplitude of Oscillation",

abstract = "Spectrum measurement results of a CMOS ring oscillator are presented that show a 10 dB decrease in 1/f noise induced phase noise at a 2 dB increase in carrier power. Simple ring oscillator theory predicts that the 1/f noise induced phase noise is independent of carrier power. It is shown that an increase in the amplitude of oscillation is accompanied by a reduction of the intrinsic 1/f noise of the periodically switched MOS transistors in the ring. A net reduction of the 1/f noise of a periodically switched NMOS transistor of more than 12 dB is measured in the baseband",

keywords = "IR-15962, METIS-112844",

author = "Gierkink, {Sander L.J.} and {van der Wel}, A.P. and G. Hoogzaad and G. Hoogzaad and Klumperink, {Eric A.M.} and {van Tuijl}, {Adrianus Johannes Maria}",

year = "1998",

month = may,

day = "31",

doi = "10.1109/ISCAS.1998.704241",

language = "Undefined",

isbn = "CD ROM",

publisher = "IEEE",

pages = "--",

booktitle = "1998 IEEE International Symposium on Circuits and Systems",

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note = "null ; Conference date: 31-05-1998 Through 03-06-1998",

}

Gierkink, SLJ, van der Wel, AP, Hoogzaad, G, Hoogzaad, G, Klumperink, EAM & van Tuijl, AJM 1998, Reduction of the 1/f Noise Induced Phase Noise in a CMOS Ring Oscillator by Increasing the Amplitude of Oscillation. in 1998 IEEE International Symposium on Circuits and Systems. IEEE, Monterey USA, pp. -, IEEE International Symposium on Circuits and Systems, ISCAS 1998, 31/05/98. https://doi.org/10.1109/ISCAS.1998.704241

Reduction of the 1/f Noise Induced Phase Noise in a CMOS Ring Oscillator by Increasing the Amplitude of Oscillation. / Gierkink, Sander L.J.; van der Wel, A.P.; Hoogzaad, G.; Hoogzaad, G.; Klumperink, Eric A.M.; van Tuijl, Adrianus Johannes Maria.

1998 IEEE International Symposium on Circuits and Systems. Monterey USA : IEEE, 1998. p. -.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Reduction of the 1/f Noise Induced Phase Noise in a CMOS Ring Oscillator by Increasing the Amplitude of Oscillation

AU - Gierkink, Sander L.J.

AU - van der Wel, A.P.

AU - Hoogzaad, G.

AU - Klumperink, Eric A.M.

AU - van Tuijl, Adrianus Johannes Maria

PY - 1998/5/31

Y1 - 1998/5/31

N2 - Spectrum measurement results of a CMOS ring oscillator are presented that show a 10 dB decrease in 1/f noise induced phase noise at a 2 dB increase in carrier power. Simple ring oscillator theory predicts that the 1/f noise induced phase noise is independent of carrier power. It is shown that an increase in the amplitude of oscillation is accompanied by a reduction of the intrinsic 1/f noise of the periodically switched MOS transistors in the ring. A net reduction of the 1/f noise of a periodically switched NMOS transistor of more than 12 dB is measured in the baseband

AB - Spectrum measurement results of a CMOS ring oscillator are presented that show a 10 dB decrease in 1/f noise induced phase noise at a 2 dB increase in carrier power. Simple ring oscillator theory predicts that the 1/f noise induced phase noise is independent of carrier power. It is shown that an increase in the amplitude of oscillation is accompanied by a reduction of the intrinsic 1/f noise of the periodically switched MOS transistors in the ring. A net reduction of the 1/f noise of a periodically switched NMOS transistor of more than 12 dB is measured in the baseband

KW - IR-15962

KW - METIS-112844

U2 - 10.1109/ISCAS.1998.704241

DO - 10.1109/ISCAS.1998.704241

M3 - Conference contribution

SN - CD ROM

SP - -

BT - 1998 IEEE International Symposium on Circuits and Systems

PB - IEEE

CY - Monterey USA

Y2 - 31 May 1998 through 3 June 1998

ER -