Reduction of the 1/f Noise Induced Phase Noise in a CMOS Ring Oscillator by Increasing the Amplitude of Oscillation

S.L.J. Gierkink; A. van der Wel; G. Hoogzaad; E.A.M. Klumperink; A.J.M. van Tuijl

doi:10.1109/ISCAS.1998.704241

Reduction of the 1/f Noise Induced Phase Noise in a CMOS Ring Oscillator by Increasing the Amplitude of Oscillation

S.L.J. Gierkink, A. van der Wel, G. Hoogzaad, E.A.M. Klumperink, A.J.M. van Tuijl

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

6 Citations (Scopus)

176 Downloads (Pure)

Abstract

Spectrum measurement results of a CMOS ring oscillator are presented that show a 10 dB decrease in 1/f noise induced phase noise at a 2 dB increase in carrier power. Simple ring oscillator theory predicts that the 1/f noise induced phase noise is independent of carrier power. It is shown that an increase in the amplitude of oscillation is accompanied by a reduction of the intrinsic 1/f noise of the periodically switched MOS transistors in the ring. A net reduction of the 1/f noise of a periodically switched NMOS transistor of more than 12 dB is measured in the baseband

Original language	English
Title of host publication	1998 IEEE International Symposium on Circuits and Systems (ISCAS)
Place of Publication	Piscataway, NJ
Publisher	IEEE
Number of pages	4
Volume	1
ISBN (Print)	0-7803-4455-3
DOIs	https://doi.org/10.1109/ISCAS.1998.704241
Publication status	Published - 31 May 1998
Event	IEEE International Symposium on Circuits and Systems, ISCAS 1998 - Monterey, United States Duration: 31 May 1998 → 3 Jun 1998

Conference

Conference	IEEE International Symposium on Circuits and Systems, ISCAS 1998
Abbreviated title	ISCAS
Country/Territory	United States
City	Monterey
Period	31/05/98 → 3/06/98

Access to Document

10.1109/ISCAS.1998.704241

Cite this

@inproceedings{2973a6370ae94247a898438f4b4ca387,

title = "Reduction of the 1/f Noise Induced Phase Noise in a CMOS Ring Oscillator by Increasing the Amplitude of Oscillation",

abstract = "Spectrum measurement results of a CMOS ring oscillator are presented that show a 10 dB decrease in 1/f noise induced phase noise at a 2 dB increase in carrier power. Simple ring oscillator theory predicts that the 1/f noise induced phase noise is independent of carrier power. It is shown that an increase in the amplitude of oscillation is accompanied by a reduction of the intrinsic 1/f noise of the periodically switched MOS transistors in the ring. A net reduction of the 1/f noise of a periodically switched NMOS transistor of more than 12 dB is measured in the baseband",

author = "S.L.J. Gierkink and {van der Wel}, A. and G. Hoogzaad and E.A.M. Klumperink and {van Tuijl}, A.J.M.",

year = "1998",

month = may,

day = "31",

doi = "10.1109/ISCAS.1998.704241",

language = "English",

isbn = "0-7803-4455-3",

volume = "1",

booktitle = "1998 IEEE International Symposium on Circuits and Systems (ISCAS)",

publisher = "IEEE",

address = "United States",

note = "IEEE International Symposium on Circuits and Systems, ISCAS 1998, ISCAS ; Conference date: 31-05-1998 Through 03-06-1998",

}

Gierkink, SLJ, van der Wel, A, Hoogzaad, G, Klumperink, EAM & van Tuijl, AJM 1998, Reduction of the 1/f Noise Induced Phase Noise in a CMOS Ring Oscillator by Increasing the Amplitude of Oscillation. in 1998 IEEE International Symposium on Circuits and Systems (ISCAS). vol. 1, 704241, IEEE, Piscataway, NJ, IEEE International Symposium on Circuits and Systems, ISCAS 1998, Monterey, California, United States, 31/05/98. https://doi.org/10.1109/ISCAS.1998.704241

Reduction of the 1/f Noise Induced Phase Noise in a CMOS Ring Oscillator by Increasing the Amplitude of Oscillation. / Gierkink, S.L.J.; van der Wel, A.; Hoogzaad, G. et al.
1998 IEEE International Symposium on Circuits and Systems (ISCAS). Vol. 1 Piscataway, NJ: IEEE, 1998. 704241.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Reduction of the 1/f Noise Induced Phase Noise in a CMOS Ring Oscillator by Increasing the Amplitude of Oscillation

AU - Gierkink, S.L.J.

AU - van der Wel, A.

AU - Hoogzaad, G.

AU - Klumperink, E.A.M.

AU - van Tuijl, A.J.M.

PY - 1998/5/31

Y1 - 1998/5/31

N2 - Spectrum measurement results of a CMOS ring oscillator are presented that show a 10 dB decrease in 1/f noise induced phase noise at a 2 dB increase in carrier power. Simple ring oscillator theory predicts that the 1/f noise induced phase noise is independent of carrier power. It is shown that an increase in the amplitude of oscillation is accompanied by a reduction of the intrinsic 1/f noise of the periodically switched MOS transistors in the ring. A net reduction of the 1/f noise of a periodically switched NMOS transistor of more than 12 dB is measured in the baseband

AB - Spectrum measurement results of a CMOS ring oscillator are presented that show a 10 dB decrease in 1/f noise induced phase noise at a 2 dB increase in carrier power. Simple ring oscillator theory predicts that the 1/f noise induced phase noise is independent of carrier power. It is shown that an increase in the amplitude of oscillation is accompanied by a reduction of the intrinsic 1/f noise of the periodically switched MOS transistors in the ring. A net reduction of the 1/f noise of a periodically switched NMOS transistor of more than 12 dB is measured in the baseband

U2 - 10.1109/ISCAS.1998.704241

DO - 10.1109/ISCAS.1998.704241

M3 - Conference contribution

SN - 0-7803-4455-3

VL - 1

BT - 1998 IEEE International Symposium on Circuits and Systems (ISCAS)

PB - IEEE

CY - Piscataway, NJ

T2 - IEEE International Symposium on Circuits and Systems, ISCAS 1998

Y2 - 31 May 1998 through 3 June 1998

ER -

Reduction of the 1/f Noise Induced Phase Noise in a CMOS Ring Oscillator by Increasing the Amplitude of Oscillation

Abstract

Conference

Access to Document

Fingerprint

Cite this