Reduction of the 1/f Noise Induced Phase Noise in a CMOS Ring Oscillator by Increasing the Amplitude of Oscillation

Sander L.J. Gierkink, A.P. van der Wel, G. Hoogzaad, G. Hoogzaad, Eric A.M. Klumperink, Adrianus Johannes Maria van Tuijl

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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    Spectrum measurement results of a CMOS ring oscillator are presented that show a 10 dB decrease in 1/f noise induced phase noise at a 2 dB increase in carrier power. Simple ring oscillator theory predicts that the 1/f noise induced phase noise is independent of carrier power. It is shown that an increase in the amplitude of oscillation is accompanied by a reduction of the intrinsic 1/f noise of the periodically switched MOS transistors in the ring. A net reduction of the 1/f noise of a periodically switched NMOS transistor of more than 12 dB is measured in the baseband
    Original languageUndefined
    Title of host publication1998 IEEE International Symposium on Circuits and Systems
    Place of PublicationMonterey USA
    ISBN (Print)CD ROM
    Publication statusPublished - 31 May 1998
    EventIEEE International Symposium on Circuits and Systems, ISCAS 1998 - Monterey, USA
    Duration: 31 May 19983 Jun 1998

    Publication series



    ConferenceIEEE International Symposium on Circuits and Systems, ISCAS 1998
    OtherMay 31 - June 3, 1998


    • IR-15962
    • METIS-112844

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