Reference field effect transistor based on chemically modified ISFETs

Maria Skowronska-Ptasinska, Peter D. van der Wal, Albert van den Berg, Piet Bergveld, Ernst J.R. Sudholter, David N. Reinhoudt

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    Different hydrophobic polymers were used for chemical modification of ion-sensitive field effect transistors (ISFETs) in order to prepare a reference FET (REFET). Chemical attachment of the polymer to the ISFET gate results in a long lifetime of the device. Properties of polyacrylate (polyACE) REFETs are described in detail. The polyACE-REFET is superior to other polymer modified REFETs, showing an excellent pH insensitivity (1 mV pH−1), a long lifetime and an electrically identical behaviour as an unmodified pH ISFET or a cation-selective PVC-MEMFET (membrane FET). The cation permeselectivity of the polymer can be significantly reduced by addition of immobile cations. The applicability of a polyACE-REFET in differential measurements with a pH ISFET and a K+ MEMFET is demonstrated.
    Original languageEnglish
    Pages (from-to)67-73
    Number of pages7
    JournalAnalytica chimica acta
    Publication statusPublished - 1990


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