Reference field effect transistor based on chemically modified ISFETs

Maria Skowronska-Ptasinska, Peter D. van der Wal, P.D. van der Wal, Albert van den Berg, Piet Bergveld, Ernst J.R. Sudhölter, Ernst Sudholter, David Reinhoudt

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Abstract

Different hydrophobic polymers were used for chemical modification of ion-sensitive field effect transistors (ISFETs) in order to prepare a reference FET (REFET). Chemical attachment of the polymer to the ISFET gate results in a long lifetime of the device. Properties of polyacrylate (polyACE) REFETs are described in detail. The polyACE-REFET is superior to other polymer modified REFETs, showing an excellent pH insensitivity (1 mV pH−1), a long lifetime and an electrically identical behaviour as an unmodified pH ISFET or a cation-selective PVC-MEMFET (membrane FET). The cation permeselectivity of the polymer can be significantly reduced by addition of immobile cations. The applicability of a polyACE-REFET in differential measurements with a pH ISFET and a K+ MEMFET is demonstrated.
Original languageUndefined
Pages (from-to)67-73
Number of pages7
JournalAnalytica chimica acta
Volume3
Issue number230
DOIs
Publication statusPublished - 1990

Keywords

  • METIS-112179
  • IR-15304

Cite this

Skowronska-Ptasinska, M., van der Wal, P. D., van der Wal, P. D., van den Berg, A., Bergveld, P., Sudhölter, E. J. R., ... Reinhoudt, D. (1990). Reference field effect transistor based on chemically modified ISFETs. Analytica chimica acta, 3(230), 67-73. https://doi.org/10.1016/S0003-2670(00)82762-2
Skowronska-Ptasinska, Maria ; van der Wal, Peter D. ; van der Wal, P.D. ; van den Berg, Albert ; Bergveld, Piet ; Sudhölter, Ernst J.R. ; Sudholter, Ernst ; Reinhoudt, David. / Reference field effect transistor based on chemically modified ISFETs. In: Analytica chimica acta. 1990 ; Vol. 3, No. 230. pp. 67-73.
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title = "Reference field effect transistor based on chemically modified ISFETs",
abstract = "Different hydrophobic polymers were used for chemical modification of ion-sensitive field effect transistors (ISFETs) in order to prepare a reference FET (REFET). Chemical attachment of the polymer to the ISFET gate results in a long lifetime of the device. Properties of polyacrylate (polyACE) REFETs are described in detail. The polyACE-REFET is superior to other polymer modified REFETs, showing an excellent pH insensitivity (1 mV pH−1), a long lifetime and an electrically identical behaviour as an unmodified pH ISFET or a cation-selective PVC-MEMFET (membrane FET). The cation permeselectivity of the polymer can be significantly reduced by addition of immobile cations. The applicability of a polyACE-REFET in differential measurements with a pH ISFET and a K+ MEMFET is demonstrated.",
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Skowronska-Ptasinska, M, van der Wal, PD, van der Wal, PD, van den Berg, A, Bergveld, P, Sudhölter, EJR, Sudholter, E & Reinhoudt, D 1990, 'Reference field effect transistor based on chemically modified ISFETs' Analytica chimica acta, vol. 3, no. 230, pp. 67-73. https://doi.org/10.1016/S0003-2670(00)82762-2

Reference field effect transistor based on chemically modified ISFETs. / Skowronska-Ptasinska, Maria; van der Wal, Peter D.; van der Wal, P.D.; van den Berg, Albert; Bergveld, Piet; Sudhölter, Ernst J.R.; Sudholter, Ernst; Reinhoudt, David.

In: Analytica chimica acta, Vol. 3, No. 230, 1990, p. 67-73.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Reference field effect transistor based on chemically modified ISFETs

AU - Skowronska-Ptasinska, Maria

AU - van der Wal, Peter D.

AU - van der Wal, P.D.

AU - van den Berg, Albert

AU - Bergveld, Piet

AU - Sudhölter, Ernst J.R.

AU - Sudholter, Ernst

AU - Reinhoudt, David

PY - 1990

Y1 - 1990

N2 - Different hydrophobic polymers were used for chemical modification of ion-sensitive field effect transistors (ISFETs) in order to prepare a reference FET (REFET). Chemical attachment of the polymer to the ISFET gate results in a long lifetime of the device. Properties of polyacrylate (polyACE) REFETs are described in detail. The polyACE-REFET is superior to other polymer modified REFETs, showing an excellent pH insensitivity (1 mV pH−1), a long lifetime and an electrically identical behaviour as an unmodified pH ISFET or a cation-selective PVC-MEMFET (membrane FET). The cation permeselectivity of the polymer can be significantly reduced by addition of immobile cations. The applicability of a polyACE-REFET in differential measurements with a pH ISFET and a K+ MEMFET is demonstrated.

AB - Different hydrophobic polymers were used for chemical modification of ion-sensitive field effect transistors (ISFETs) in order to prepare a reference FET (REFET). Chemical attachment of the polymer to the ISFET gate results in a long lifetime of the device. Properties of polyacrylate (polyACE) REFETs are described in detail. The polyACE-REFET is superior to other polymer modified REFETs, showing an excellent pH insensitivity (1 mV pH−1), a long lifetime and an electrically identical behaviour as an unmodified pH ISFET or a cation-selective PVC-MEMFET (membrane FET). The cation permeselectivity of the polymer can be significantly reduced by addition of immobile cations. The applicability of a polyACE-REFET in differential measurements with a pH ISFET and a K+ MEMFET is demonstrated.

KW - METIS-112179

KW - IR-15304

U2 - 10.1016/S0003-2670(00)82762-2

DO - 10.1016/S0003-2670(00)82762-2

M3 - Article

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JO - Analytica chimica acta

JF - Analytica chimica acta

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ER -

Skowronska-Ptasinska M, van der Wal PD, van der Wal PD, van den Berg A, Bergveld P, Sudhölter EJR et al. Reference field effect transistor based on chemically modified ISFETs. Analytica chimica acta. 1990;3(230):67-73. https://doi.org/10.1016/S0003-2670(00)82762-2