Reflectance Tuning at Extreme Ultraviolet (EUV) Wavelengths with Active Multilayer Mirrors

Research output: Other contributionOther research output

Abstract

At extreme ultraviolet (EUV) wavelengths the refractive power of transmission type optical components is limited, therefore reflective components are used. Reflective optics (multilayer mirrors) usually consist of many bilayers and each bilayer is composed of a high and a low refractive index material to maximize the partial reflection from the interface. For each bilayer composition, the reflectance is dependent on the wavelength and the incidence angle. Here we propose an active multilayer mirror structure which can tune its reflectance with external voltage. The active multilayer mirror is designed to work at EUV lithography wavelengths (around 13.5 nm) in normal incidence configuration by combining Mo/Si multilayer mirrors, a piezoelectric active layer, a buffer layer and electrodes as shown in the figure. Optimization of the structure for maximum reflectance tuning will be explained for different types of light sources by considering the fabrication process.
Original languageEnglish
Place of PublicationLunteren, De Werelt
Publication statusPublished - 2011

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tuning
mirrors
reflectance
wavelengths
incidence
light sources
lithography
buffers
optics
refractivity
fabrication
optimization
electrodes
electric potential
configurations

Keywords

  • METIS-304937

Cite this

@misc{cec39a92ce1246848a5184526aa1dcb7,
title = "Reflectance Tuning at Extreme Ultraviolet (EUV) Wavelengths with Active Multilayer Mirrors",
abstract = "At extreme ultraviolet (EUV) wavelengths the refractive power of transmission type optical components is limited, therefore reflective components are used. Reflective optics (multilayer mirrors) usually consist of many bilayers and each bilayer is composed of a high and a low refractive index material to maximize the partial reflection from the interface. For each bilayer composition, the reflectance is dependent on the wavelength and the incidence angle. Here we propose an active multilayer mirror structure which can tune its reflectance with external voltage. The active multilayer mirror is designed to work at EUV lithography wavelengths (around 13.5 nm) in normal incidence configuration by combining Mo/Si multilayer mirrors, a piezoelectric active layer, a buffer layer and electrodes as shown in the figure. Optimization of the structure for maximum reflectance tuning will be explained for different types of light sources by considering the fabrication process.",
keywords = "METIS-304937",
author = "Muharrem Bayraktar and Lee, {Christopher James} and {van Goor}, F.A. and Gertjan Koster and Rijnders, {Augustinus J.H.M.} and Frederik Bijkerk",
year = "2011",
language = "English",
type = "Other",

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TY - GEN

T1 - Reflectance Tuning at Extreme Ultraviolet (EUV) Wavelengths with Active Multilayer Mirrors

AU - Bayraktar, Muharrem

AU - Lee, Christopher James

AU - van Goor, F.A.

AU - Koster, Gertjan

AU - Rijnders, Augustinus J.H.M.

AU - Bijkerk, Frederik

PY - 2011

Y1 - 2011

N2 - At extreme ultraviolet (EUV) wavelengths the refractive power of transmission type optical components is limited, therefore reflective components are used. Reflective optics (multilayer mirrors) usually consist of many bilayers and each bilayer is composed of a high and a low refractive index material to maximize the partial reflection from the interface. For each bilayer composition, the reflectance is dependent on the wavelength and the incidence angle. Here we propose an active multilayer mirror structure which can tune its reflectance with external voltage. The active multilayer mirror is designed to work at EUV lithography wavelengths (around 13.5 nm) in normal incidence configuration by combining Mo/Si multilayer mirrors, a piezoelectric active layer, a buffer layer and electrodes as shown in the figure. Optimization of the structure for maximum reflectance tuning will be explained for different types of light sources by considering the fabrication process.

AB - At extreme ultraviolet (EUV) wavelengths the refractive power of transmission type optical components is limited, therefore reflective components are used. Reflective optics (multilayer mirrors) usually consist of many bilayers and each bilayer is composed of a high and a low refractive index material to maximize the partial reflection from the interface. For each bilayer composition, the reflectance is dependent on the wavelength and the incidence angle. Here we propose an active multilayer mirror structure which can tune its reflectance with external voltage. The active multilayer mirror is designed to work at EUV lithography wavelengths (around 13.5 nm) in normal incidence configuration by combining Mo/Si multilayer mirrors, a piezoelectric active layer, a buffer layer and electrodes as shown in the figure. Optimization of the structure for maximum reflectance tuning will be explained for different types of light sources by considering the fabrication process.

KW - METIS-304937

M3 - Other contribution

CY - Lunteren, De Werelt

ER -