TY - PAT
T1 - Reflective element for EUV lithography device
AU - Yakshin, Andrey
AU - van de Kruijs, Robbert Wilhelmus Elisabeth
AU - Bijkerk, Frederik
AU - Louis, Eric
AU - Nedelcu, I.
N1 - Voortzetting van patent WO 2008095663 A1 / PCT/EP2008/000842, "Multilayer reflective optical element for EUV lithography devices comprising first and second additional intermediate layers"
PY - 2010
Y1 - 2010
N2 - A reflective optical; element exhibits an increase in the maximum reflectivity at operating wavelengths in the extreme ultraviolet or soft x-ray wavelength range. A first additional intermediate layer (23a, 23b) and a second additional intermediate layer (24a, 24b) are provided between the absorber layer (22) and the spacer layer (21), wherein the first additional intermediate layer increases the reflectivity and the second additional intermediate layer (24a,b,) prevents chemical interaction between the first additional intermediate layer (23 a,b) and the adjoining spacer layer (21) and/or the absorber layer.
AB - A reflective optical; element exhibits an increase in the maximum reflectivity at operating wavelengths in the extreme ultraviolet or soft x-ray wavelength range. A first additional intermediate layer (23a, 23b) and a second additional intermediate layer (24a, 24b) are provided between the absorber layer (22) and the spacer layer (21), wherein the first additional intermediate layer increases the reflectivity and the second additional intermediate layer (24a,b,) prevents chemical interaction between the first additional intermediate layer (23 a,b) and the adjoining spacer layer (21) and/or the absorber layer.
KW - METIS-316948
M3 - Patent
M1 - US20090536251 20090805
ER -