Reflectivity of Mo/Si multilayer systems for EUVL

E. Louis*, A. E. Yakshin, P. C. Gorts, S. Abdali, E. L G Maas, R. Stuik, F. Bijkerk, D. Schmitz, F. Scholze, G. Ulm, M. Haidl, Carl Zeiss

*Corresponding author for this work

Research output: Contribution to journalConference articleAcademicpeer-review

28 Citations (Scopus)


The normal-incidence reflectivity data of Mo/Si multilayer systems are reported for the extreme ultraviolet (EUV) wavelength range. The method employed is e-beam evaporation and ion-beam smoothening of the layer surfaces after growth of the separate layers. Grazing-incidence reflectivity measurements, using Cu-Ka radiation in θ-2θ measurements, showed a high-frequency roughness component of 0.3 nm, while atomic force microscopy characterization of the top surface of full stack multilayers showed a roughness down to 0.1 nm. High resolution transmission electron microscopy inspection conformed that the interface roughness was constant throughout the full stack.

Original languageEnglish
Pages (from-to)844-845
Number of pages2
JournalProceedings of SPIE - the international society for optical engineering
Issue numberII
Publication statusPublished - 1 Jan 1999
Externally publishedYes
EventEmerging Lithographic Technologies III 1999 - Santa Clara, United States
Duration: 15 Mar 199917 Mar 1999
Conference number: 3


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