Reflectivity of Mo/Si multilayer systems for EUVL

E. Louis; A. E. Yakshin; P. C. Gorts; S. Abdali; E. L G Maas; R. Stuik; F. Bijkerk; D. Schmitz; F. Scholze; G. Ulm; M. Haidl; Carl Zeiss

Reflectivity of Mo/Si multilayer systems for EUVL

E. Louis^*, A. E. Yakshin, P. C. Gorts, S. Abdali, E. L G Maas, R. Stuik, F. Bijkerk, D. Schmitz, F. Scholze, G. Ulm, M. Haidl, Carl Zeiss

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › Academic › peer-review

28 Citations (Scopus)

Abstract

The normal-incidence reflectivity data of Mo/Si multilayer systems are reported for the extreme ultraviolet (EUV) wavelength range. The method employed is e-beam evaporation and ion-beam smoothening of the layer surfaces after growth of the separate layers. Grazing-incidence reflectivity measurements, using Cu-K_a radiation in θ-2θ measurements, showed a high-frequency roughness component of 0.3 nm, while atomic force microscopy characterization of the top surface of full stack multilayers showed a roughness down to 0.1 nm. High resolution transmission electron microscopy inspection conformed that the interface roughness was constant throughout the full stack.

Original language	English
Pages (from-to)	844-845
Number of pages	2
Journal	Proceedings of SPIE - the international society for optical engineering
Volume	3676
Issue number	II
Publication status	Published - 1 Jan 1999
Externally published	Yes
Event	Emerging Lithographic Technologies III 1999 - Santa Clara, United States Duration: 15 Mar 1999 → 17 Mar 1999 Conference number: 3

Cite this

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title = "Reflectivity of Mo/Si multilayer systems for EUVL",

abstract = "The normal-incidence reflectivity data of Mo/Si multilayer systems are reported for the extreme ultraviolet (EUV) wavelength range. The method employed is e-beam evaporation and ion-beam smoothening of the layer surfaces after growth of the separate layers. Grazing-incidence reflectivity measurements, using Cu-Ka radiation in θ-2θ measurements, showed a high-frequency roughness component of 0.3 nm, while atomic force microscopy characterization of the top surface of full stack multilayers showed a roughness down to 0.1 nm. High resolution transmission electron microscopy inspection conformed that the interface roughness was constant throughout the full stack.",

author = "E. Louis and Yakshin, {A. E.} and Gorts, {P. C.} and S. Abdali and Maas, {E. L G} and R. Stuik and F. Bijkerk and D. Schmitz and F. Scholze and G. Ulm and M. Haidl and Carl Zeiss",

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journal = "Proceedings of SPIE - the international society for optical engineering",

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note = "Emerging Lithographic Technologies III 1999 ; Conference date: 15-03-1999 Through 17-03-1999",

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TY - JOUR

T1 - Reflectivity of Mo/Si multilayer systems for EUVL

AU - Louis, E.

AU - Yakshin, A. E.

AU - Gorts, P. C.

AU - Abdali, S.

AU - Maas, E. L G

AU - Stuik, R.

AU - Bijkerk, F.

AU - Schmitz, D.

AU - Scholze, F.

AU - Ulm, G.

AU - Haidl, M.

AU - Zeiss, Carl

N1 - Conference code: 3

PY - 1999/1/1

Y1 - 1999/1/1

N2 - The normal-incidence reflectivity data of Mo/Si multilayer systems are reported for the extreme ultraviolet (EUV) wavelength range. The method employed is e-beam evaporation and ion-beam smoothening of the layer surfaces after growth of the separate layers. Grazing-incidence reflectivity measurements, using Cu-Ka radiation in θ-2θ measurements, showed a high-frequency roughness component of 0.3 nm, while atomic force microscopy characterization of the top surface of full stack multilayers showed a roughness down to 0.1 nm. High resolution transmission electron microscopy inspection conformed that the interface roughness was constant throughout the full stack.

AB - The normal-incidence reflectivity data of Mo/Si multilayer systems are reported for the extreme ultraviolet (EUV) wavelength range. The method employed is e-beam evaporation and ion-beam smoothening of the layer surfaces after growth of the separate layers. Grazing-incidence reflectivity measurements, using Cu-Ka radiation in θ-2θ measurements, showed a high-frequency roughness component of 0.3 nm, while atomic force microscopy characterization of the top surface of full stack multilayers showed a roughness down to 0.1 nm. High resolution transmission electron microscopy inspection conformed that the interface roughness was constant throughout the full stack.

UR - http://www.scopus.com/inward/record.url?scp=0032647628&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0032647628

SN - 0277-786X

VL - 3676

SP - 844

EP - 845

JO - Proceedings of SPIE - the international society for optical engineering

JF - Proceedings of SPIE - the international society for optical engineering

IS - II

T2 - Emerging Lithographic Technologies III 1999

Y2 - 15 March 1999 through 17 March 1999

ER -

Reflectivity of Mo/Si multilayer systems for EUVL

Abstract

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