Reflectometric study of surface states and oxygen adsorption on clean Si(100) and (110) surfaces

P.E. Wierenga, M.J. Sparnaay, Arend van Silfhout

    Research output: Contribution to journalArticleAcademic

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    Abstract

    External differential reflection measurements were carried out on clean Si(100) and (110) surfaces in the photon energy range of 1.0 to 3.0 eV at 300 and 80 K. The results for Si(100) at 300 K showed two peaks in the joint density of states curve, which sharpened at 80 K. One peak at 3.0 ± 0.2 eV can be attributed to optical transitions from a filled surface states band near the top of the valence band to empty bulk conduction band levels. The other peak at 1.60 ± 0.05 eV may be attributed to transitions to an empty surface states band in the energy gap. This result favours the asymmetric dimer model for the Si(100) surface. For the (110) surface at 300 K only one peak was found at 3.0 ± 0.2 eV. At 80 K the peak height diminished by a factor of two. Oxygen adsorption in the submonolayer region on the clean Si(100) surface appeared to proceed in a similar way as on the Si(111) 7 × 7 surface. For the Si(110) surface the kinetics of the adsorption process at 80 K deviated clearly. The binding state of oxygen on this surface at 80 K appeared to be different from that on the same surface at 300 K.
    Original languageUndefined
    Pages (from-to)59-69
    JournalSurface science
    Volume99
    Issue number1
    DOIs
    Publication statusPublished - 1980

    Keywords

    • IR-68689

    Cite this

    Wierenga, P.E. ; Sparnaay, M.J. ; van Silfhout, Arend. / Reflectometric study of surface states and oxygen adsorption on clean Si(100) and (110) surfaces. In: Surface science. 1980 ; Vol. 99, No. 1. pp. 59-69.
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    title = "Reflectometric study of surface states and oxygen adsorption on clean Si(100) and (110) surfaces",
    abstract = "External differential reflection measurements were carried out on clean Si(100) and (110) surfaces in the photon energy range of 1.0 to 3.0 eV at 300 and 80 K. The results for Si(100) at 300 K showed two peaks in the joint density of states curve, which sharpened at 80 K. One peak at 3.0 ± 0.2 eV can be attributed to optical transitions from a filled surface states band near the top of the valence band to empty bulk conduction band levels. The other peak at 1.60 ± 0.05 eV may be attributed to transitions to an empty surface states band in the energy gap. This result favours the asymmetric dimer model for the Si(100) surface. For the (110) surface at 300 K only one peak was found at 3.0 ± 0.2 eV. At 80 K the peak height diminished by a factor of two. Oxygen adsorption in the submonolayer region on the clean Si(100) surface appeared to proceed in a similar way as on the Si(111) 7 × 7 surface. For the Si(110) surface the kinetics of the adsorption process at 80 K deviated clearly. The binding state of oxygen on this surface at 80 K appeared to be different from that on the same surface at 300 K.",
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    author = "P.E. Wierenga and M.J. Sparnaay and {van Silfhout}, Arend",
    year = "1980",
    doi = "10.1016/0039-6028(80)90576-2",
    language = "Undefined",
    volume = "99",
    pages = "59--69",
    journal = "Surface science",
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    Reflectometric study of surface states and oxygen adsorption on clean Si(100) and (110) surfaces. / Wierenga, P.E.; Sparnaay, M.J.; van Silfhout, Arend.

    In: Surface science, Vol. 99, No. 1, 1980, p. 59-69.

    Research output: Contribution to journalArticleAcademic

    TY - JOUR

    T1 - Reflectometric study of surface states and oxygen adsorption on clean Si(100) and (110) surfaces

    AU - Wierenga, P.E.

    AU - Sparnaay, M.J.

    AU - van Silfhout, Arend

    PY - 1980

    Y1 - 1980

    N2 - External differential reflection measurements were carried out on clean Si(100) and (110) surfaces in the photon energy range of 1.0 to 3.0 eV at 300 and 80 K. The results for Si(100) at 300 K showed two peaks in the joint density of states curve, which sharpened at 80 K. One peak at 3.0 ± 0.2 eV can be attributed to optical transitions from a filled surface states band near the top of the valence band to empty bulk conduction band levels. The other peak at 1.60 ± 0.05 eV may be attributed to transitions to an empty surface states band in the energy gap. This result favours the asymmetric dimer model for the Si(100) surface. For the (110) surface at 300 K only one peak was found at 3.0 ± 0.2 eV. At 80 K the peak height diminished by a factor of two. Oxygen adsorption in the submonolayer region on the clean Si(100) surface appeared to proceed in a similar way as on the Si(111) 7 × 7 surface. For the Si(110) surface the kinetics of the adsorption process at 80 K deviated clearly. The binding state of oxygen on this surface at 80 K appeared to be different from that on the same surface at 300 K.

    AB - External differential reflection measurements were carried out on clean Si(100) and (110) surfaces in the photon energy range of 1.0 to 3.0 eV at 300 and 80 K. The results for Si(100) at 300 K showed two peaks in the joint density of states curve, which sharpened at 80 K. One peak at 3.0 ± 0.2 eV can be attributed to optical transitions from a filled surface states band near the top of the valence band to empty bulk conduction band levels. The other peak at 1.60 ± 0.05 eV may be attributed to transitions to an empty surface states band in the energy gap. This result favours the asymmetric dimer model for the Si(100) surface. For the (110) surface at 300 K only one peak was found at 3.0 ± 0.2 eV. At 80 K the peak height diminished by a factor of two. Oxygen adsorption in the submonolayer region on the clean Si(100) surface appeared to proceed in a similar way as on the Si(111) 7 × 7 surface. For the Si(110) surface the kinetics of the adsorption process at 80 K deviated clearly. The binding state of oxygen on this surface at 80 K appeared to be different from that on the same surface at 300 K.

    KW - IR-68689

    U2 - 10.1016/0039-6028(80)90576-2

    DO - 10.1016/0039-6028(80)90576-2

    M3 - Article

    VL - 99

    SP - 59

    EP - 69

    JO - Surface science

    JF - Surface science

    SN - 0039-6028

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    ER -