Relating Random Telegraph Signal Noise in Metal Oxide Semiconductor Transistors to Interface Trap Energy Distribution

A.P. van der Wel, E.A.M. Klumperink, E. Hoekstra, B. Nauta

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    Abstract

    In this work, we study random telegraph signal (RTS) noise in metal-oxide-semiconductor field effect transistors when the device is periodically and rapidly cycled between an "on" and an "off" bias state. We derive the effective RTS time constants for this case using Shockley–Read–Hall statistics applied under transient conditions. In this way, we show that the oft-observed reduction in RTS noise under such bias conditions can be explained by a nonuniform (e.g., U-shaped) distribution in energy of interface traps.
    Original languageEnglish
    Article number183507
    Number of pages3
    JournalApplied physics letters
    Volume87
    Issue number18
    DOIs
    Publication statusPublished - Oct 2005

    Keywords

    • PACS-85.30.Tv
    • MOSFET
    • Random noise
    • Interface states

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