Relation between plasma process-induced oxide failure fraction and antenna ratio

Zhichun Wang, Andrea Scarpa, Cora Salm, F.G. Kuper

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    6 Citations (Scopus)
    11 Downloads (Pure)

    Abstract

    Conventional antenna charging theory predicts that the net current drawn from plasma is proportional to the charge collecting area of the antenna. However, a quantitative relation between plasma process-induced oxide failure fraction and antenna ratio (AR) has not been found yet. In this paper, yield data of antenna testers have been correlated to the AR in a 0.18?m CMOS technology process. A model is built which fits the experiment data very well. Based on this model, yield loss data obtained on large AR test structures can be used to extrapolate the charging currents and yield loss of smaller AR structures which occur more often in real circuits.
    Original languageEnglish
    Title of host publication6th International Symposium on Plasma Process-Induced Damage 2001
    Place of PublicationPiscataway, NJ
    PublisherIEEE
    Pages16-19
    Number of pages4
    ISBN (Print)0-9651577-5-X
    DOIs
    Publication statusPublished - May 2001
    Event6th International Symposium on Plasma Process-Induced Damage 2001 - Monterey, United States
    Duration: 13 May 200115 May 2001
    Conference number: 6

    Conference

    Conference6th International Symposium on Plasma Process-Induced Damage 2001
    CountryUnited States
    CityMonterey
    Period13/05/0115/05/01

    Keywords

    • IR-41748
    • EWI-15642
    • Plasma process-induced damage
    • METIS-113959
    • Gate oxide
    • antenna ratio

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