Relation between plasma process-induced oxide failure fraction and antenna ratio

Zhichun Wang; Andrea Scarpa; Cora Salm; F.G. Kuper

doi:10.1109/PPID.2001.929968

Relation between plasma process-induced oxide failure fraction and antenna ratio

Zhichun Wang, Andrea Scarpa, Cora Salm, F.G. Kuper

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

8 Citations (Scopus)

15 Downloads (Pure)

Abstract

Conventional antenna charging theory predicts that the net current drawn from plasma is proportional to the charge collecting area of the antenna. However, a quantitative relation between plasma process-induced oxide failure fraction and antenna ratio (AR) has not been found yet. In this paper, yield data of antenna testers have been correlated to the AR in a 0.18?m CMOS technology process. A model is built which fits the experiment data very well. Based on this model, yield loss data obtained on large AR test structures can be used to extrapolate the charging currents and yield loss of smaller AR structures which occur more often in real circuits.

Original language	English
Title of host publication	6th International Symposium on Plasma Process-Induced Damage 2001
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	16-19
Number of pages	4
ISBN (Print)	0-9651577-5-X
DOIs	https://doi.org/10.1109/PPID.2001.929968
Publication status	Published - May 2001
Event	6th International Symposium on Plasma Process-Induced Damage 2001 - Monterey, United States Duration: 13 May 2001 → 15 May 2001 Conference number: 6

Conference

Conference	6th International Symposium on Plasma Process-Induced Damage 2001
Country/Territory	United States
City	Monterey
Period	13/05/01 → 15/05/01

Keywords

IR-41748
EWI-15642
Plasma process-induced damage
METIS-113959
Gate oxide
antenna ratio

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10.1109/PPID.2001.929968

Cite this

@inproceedings{c85de7b61f024891a03b26bee07e6017,

title = "Relation between plasma process-induced oxide failure fraction and antenna ratio",

abstract = "Conventional antenna charging theory predicts that the net current drawn from plasma is proportional to the charge collecting area of the antenna. However, a quantitative relation between plasma process-induced oxide failure fraction and antenna ratio (AR) has not been found yet. In this paper, yield data of antenna testers have been correlated to the AR in a 0.18?m CMOS technology process. A model is built which fits the experiment data very well. Based on this model, yield loss data obtained on large AR test structures can be used to extrapolate the charging currents and yield loss of smaller AR structures which occur more often in real circuits.",

keywords = "IR-41748, EWI-15642, Plasma process-induced damage, METIS-113959, Gate oxide, antenna ratio",

author = "Zhichun Wang and Andrea Scarpa and Cora Salm and F.G. Kuper",

year = "2001",

month = may,

doi = "10.1109/PPID.2001.929968",

language = "English",

isbn = "0-9651577-5-X",

pages = "16--19",

booktitle = "6th International Symposium on Plasma Process-Induced Damage 2001",

publisher = "IEEE",

address = "United States",

note = "6th International Symposium on Plasma Process-Induced Damage 2001 ; Conference date: 13-05-2001 Through 15-05-2001",

}

Wang, Z, Scarpa, A, Salm, C & Kuper, FG 2001, Relation between plasma process-induced oxide failure fraction and antenna ratio. in 6th International Symposium on Plasma Process-Induced Damage 2001. IEEE, Piscataway, NJ, pp. 16-19, 6th International Symposium on Plasma Process-Induced Damage 2001, Monterey, California, United States, 13/05/01. https://doi.org/10.1109/PPID.2001.929968

TY - GEN

T1 - Relation between plasma process-induced oxide failure fraction and antenna ratio

AU - Wang, Zhichun

AU - Scarpa, Andrea

AU - Salm, Cora

AU - Kuper, F.G.

N1 - Conference code: 6

PY - 2001/5

Y1 - 2001/5

N2 - Conventional antenna charging theory predicts that the net current drawn from plasma is proportional to the charge collecting area of the antenna. However, a quantitative relation between plasma process-induced oxide failure fraction and antenna ratio (AR) has not been found yet. In this paper, yield data of antenna testers have been correlated to the AR in a 0.18?m CMOS technology process. A model is built which fits the experiment data very well. Based on this model, yield loss data obtained on large AR test structures can be used to extrapolate the charging currents and yield loss of smaller AR structures which occur more often in real circuits.

AB - Conventional antenna charging theory predicts that the net current drawn from plasma is proportional to the charge collecting area of the antenna. However, a quantitative relation between plasma process-induced oxide failure fraction and antenna ratio (AR) has not been found yet. In this paper, yield data of antenna testers have been correlated to the AR in a 0.18?m CMOS technology process. A model is built which fits the experiment data very well. Based on this model, yield loss data obtained on large AR test structures can be used to extrapolate the charging currents and yield loss of smaller AR structures which occur more often in real circuits.

KW - IR-41748

KW - EWI-15642

KW - Plasma process-induced damage

KW - METIS-113959

KW - Gate oxide

KW - antenna ratio

U2 - 10.1109/PPID.2001.929968

DO - 10.1109/PPID.2001.929968

M3 - Conference contribution

SN - 0-9651577-5-X

SP - 16

EP - 19

BT - 6th International Symposium on Plasma Process-Induced Damage 2001

PB - IEEE

CY - Piscataway, NJ

T2 - 6th International Symposium on Plasma Process-Induced Damage 2001

Y2 - 13 May 2001 through 15 May 2001

ER -

Relation between plasma process-induced oxide failure fraction and antenna ratio

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