Abstract
Conventional antenna charging theory predicts that the net current drawn from plasma is proportional to the charge collecting area of the antenna. However, a quantitative relation between plasma process-induced oxide failure fraction and antenna ratio (AR) has not been found yet. In this paper, yield data of antenna testers have been correlated to the AR in a 0.18?m CMOS technology process. A model is built which fits the experiment data very well. Based on this model, yield loss data obtained on large AR test structures can be used to extrapolate the charging currents and yield loss of smaller AR structures which occur more often in real circuits.
Original language | English |
---|---|
Title of host publication | 6th International Symposium on Plasma Process-Induced Damage 2001 |
Place of Publication | Piscataway, NJ |
Publisher | IEEE |
Pages | 16-19 |
Number of pages | 4 |
ISBN (Print) | 0-9651577-5-X |
DOIs | |
Publication status | Published - May 2001 |
Event | 6th International Symposium on Plasma Process-Induced Damage 2001 - Monterey, United States Duration: 13 May 2001 → 15 May 2001 Conference number: 6 |
Conference
Conference | 6th International Symposium on Plasma Process-Induced Damage 2001 |
---|---|
Country/Territory | United States |
City | Monterey |
Period | 13/05/01 → 15/05/01 |
Keywords
- IR-41748
- EWI-15642
- Plasma process-induced damage
- METIS-113959
- Gate oxide
- antenna ratio