Relaxor-ferroelectric films for dielectric tunable applications: Effect of film thickness and applied electric field

Minh D. Nguyen*, Doan T. Tran, Ha T. Dang, Chi T.Q. Nguyen, Guus Rijnders, Hung N. Vu

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

6 Citations (Scopus)
49 Downloads (Pure)

Abstract

The dielectric properties, tunability and figure-of-merit (FOM) of relaxor Pb0.9La0.1(Zr0.52Ti0.48)O3 (PLZT) films have been investigated. Dielectric measurements indicated that the dielectric constant (at zero-bias field), tunability and FOM are enhanced as the film thickness increases, which are mainly attributed to the presence of an interfacial layer near the film-electrode interface. Experimental results illustrated that a slight reduction is observed in both dielectric constant and tunability (−2%) in a wide-frequency range (10 kHz–1 MHz); meanwhile, the FOM value decreases significantly (−17%) with increasing frequency, arising from the higher dielectric loss value. The 1000-nm PLZT film shows the largest tunability of 94.6% at a maximum electric-field of 1450 kV/cm, while the highest FOM factor is 37.6 at 1000 kV/cm, due to the combination of medium tunability (88.7%) and low dielectric loss (0.0236). All these excellent results indicated that the relaxor PLZT films are promising candidates for specific applications in microwave devices.

Original languageEnglish
Article number6448
JournalMaterials
Volume14
Issue number21
DOIs
Publication statusPublished - 1 Nov 2021

Keywords

  • Dielectric properties
  • Figure-of-merit
  • Relaxor ferroelectrics
  • Tunability
  • UT-Gold-D

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