Relaxor-ferroelectric films for dielectric tunable applications: Effect of film thickness and applied electric field

Minh D. Nguyen; Doan T. Tran; Ha T. Dang; Chi T.Q. Nguyen; Guus Rijnders; Hung N. Vu

doi:10.3390/ma14216448

Relaxor-ferroelectric films for dielectric tunable applications: Effect of film thickness and applied electric field

Minh D. Nguyen^*
, Doan T. Tran
, Ha T. Dang
, Chi T.Q. Nguyen
, Guus Rijnders
, Hung N. Vu

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

9 Citations (Scopus)

124 Downloads (Pure)

Abstract

The dielectric properties, tunability and figure-of-merit (FOM) of relaxor Pb_0.9La_0.1(Zr_0.52Ti_0.48)O₃ (PLZT) films have been investigated. Dielectric measurements indicated that the dielectric constant (at zero-bias field), tunability and FOM are enhanced as the film thickness increases, which are mainly attributed to the presence of an interfacial layer near the film-electrode interface. Experimental results illustrated that a slight reduction is observed in both dielectric constant and tunability (−2%) in a wide-frequency range (10 kHz–1 MHz); meanwhile, the FOM value decreases significantly (−17%) with increasing frequency, arising from the higher dielectric loss value. The 1000-nm PLZT film shows the largest tunability of 94.6% at a maximum electric-field of 1450 kV/cm, while the highest FOM factor is 37.6 at 1000 kV/cm, due to the combination of medium tunability (88.7%) and low dielectric loss (0.0236). All these excellent results indicated that the relaxor PLZT films are promising candidates for specific applications in microwave devices.

Original language	English
Article number	6448
Journal	Materials
Volume	14
Issue number	21
DOIs	https://doi.org/10.3390/ma14216448
Publication status	Published - 1 Nov 2021

Keywords

Dielectric properties
Figure-of-merit
Relaxor ferroelectrics
Tunability
UT-Gold-D

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Nguyen-2021-Relaxor-ferroelectric-films-for-dieFinal published version, 2.21 MBLicence: CC BY

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title = "Relaxor-ferroelectric films for dielectric tunable applications: Effect of film thickness and applied electric field",

abstract = "The dielectric properties, tunability and figure-of-merit (FOM) of relaxor Pb0.9La0.1(Zr0.52Ti0.48)O3 (PLZT) films have been investigated. Dielectric measurements indicated that the dielectric constant (at zero-bias field), tunability and FOM are enhanced as the film thickness increases, which are mainly attributed to the presence of an interfacial layer near the film-electrode interface. Experimental results illustrated that a slight reduction is observed in both dielectric constant and tunability (−2\%) in a wide-frequency range (10 kHz–1 MHz); meanwhile, the FOM value decreases significantly (−17\%) with increasing frequency, arising from the higher dielectric loss value. The 1000-nm PLZT film shows the largest tunability of 94.6\% at a maximum electric-field of 1450 kV/cm, while the highest FOM factor is 37.6 at 1000 kV/cm, due to the combination of medium tunability (88.7\%) and low dielectric loss (0.0236). All these excellent results indicated that the relaxor PLZT films are promising candidates for specific applications in microwave devices.",

keywords = "Dielectric properties, Figure-of-merit, Relaxor ferroelectrics, Tunability, UT-Gold-D",

author = "Nguyen, \{Minh D.\} and Tran, \{Doan T.\} and Dang, \{Ha T.\} and Nguyen, \{Chi T.Q.\} and Guus Rijnders and Vu, \{Hung N.\}",

note = "Funding Information: Funding: This research was funded by the National Foundation for Science and Technology Development (NAFOSTED) of Vietnam under Grant No. 103.99-2018.23. Publisher Copyright: {\textcopyright} 2021 by the authors. Licensee MDPI, Basel, Switzerland. Financial transaction number: 342148585 ",

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month = nov,

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doi = "10.3390/ma14216448",

language = "English",

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T1 - Relaxor-ferroelectric films for dielectric tunable applications

T2 - Effect of film thickness and applied electric field

AU - Nguyen, Minh D.

AU - Tran, Doan T.

AU - Dang, Ha T.

AU - Nguyen, Chi T.Q.

AU - Rijnders, Guus

AU - Vu, Hung N.

N1 - Funding Information: Funding: This research was funded by the National Foundation for Science and Technology Development (NAFOSTED) of Vietnam under Grant No. 103.99-2018.23. Publisher Copyright: © 2021 by the authors. Licensee MDPI, Basel, Switzerland. Financial transaction number: 342148585

PY - 2021/11/1

Y1 - 2021/11/1

N2 - The dielectric properties, tunability and figure-of-merit (FOM) of relaxor Pb0.9La0.1(Zr0.52Ti0.48)O3 (PLZT) films have been investigated. Dielectric measurements indicated that the dielectric constant (at zero-bias field), tunability and FOM are enhanced as the film thickness increases, which are mainly attributed to the presence of an interfacial layer near the film-electrode interface. Experimental results illustrated that a slight reduction is observed in both dielectric constant and tunability (−2%) in a wide-frequency range (10 kHz–1 MHz); meanwhile, the FOM value decreases significantly (−17%) with increasing frequency, arising from the higher dielectric loss value. The 1000-nm PLZT film shows the largest tunability of 94.6% at a maximum electric-field of 1450 kV/cm, while the highest FOM factor is 37.6 at 1000 kV/cm, due to the combination of medium tunability (88.7%) and low dielectric loss (0.0236). All these excellent results indicated that the relaxor PLZT films are promising candidates for specific applications in microwave devices.

AB - The dielectric properties, tunability and figure-of-merit (FOM) of relaxor Pb0.9La0.1(Zr0.52Ti0.48)O3 (PLZT) films have been investigated. Dielectric measurements indicated that the dielectric constant (at zero-bias field), tunability and FOM are enhanced as the film thickness increases, which are mainly attributed to the presence of an interfacial layer near the film-electrode interface. Experimental results illustrated that a slight reduction is observed in both dielectric constant and tunability (−2%) in a wide-frequency range (10 kHz–1 MHz); meanwhile, the FOM value decreases significantly (−17%) with increasing frequency, arising from the higher dielectric loss value. The 1000-nm PLZT film shows the largest tunability of 94.6% at a maximum electric-field of 1450 kV/cm, while the highest FOM factor is 37.6 at 1000 kV/cm, due to the combination of medium tunability (88.7%) and low dielectric loss (0.0236). All these excellent results indicated that the relaxor PLZT films are promising candidates for specific applications in microwave devices.

KW - Dielectric properties

KW - Figure-of-merit

KW - Relaxor ferroelectrics

KW - Tunability

KW - UT-Gold-D

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U2 - 10.3390/ma14216448

DO - 10.3390/ma14216448

M3 - Article

AN - SCOPUS:85118564078

SN - 1996-1944

VL - 14

JO - Materials

JF - Materials

IS - 21

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ER -

Relaxor-ferroelectric films for dielectric tunable applications: Effect of film thickness and applied electric field

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Keywords

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