Relaxor-ferroelectric thin film heterostructure with large imprint for high energy-storage performance at low operating voltage

Minh D. Nguyen*, Evert P. Houwman, Minh T. Do, Guus Rijnders

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

1 Citation (Scopus)
2 Downloads (Pure)

Abstract

Excellent energy storage performance in combination with a low operating voltage is a very important factor for pulse-power dielectric capacitor devices to achieve miniaturization and integration. Here the heterostructure of the relaxor ferroelectric Pb0.9La0.1(Zr0.52Ti0.48)O3 (PL), with a slim hysteresis loop, on the normal ferroelectric Pb(Zr0.52Ti0.48)0.99Nb0.01O3 (PN), causing a large voltage imprint, is shown to improve the energy-storage performance. A large recoverable energy-storage density of 43.5 J/cm3 and a high energy-storage efficiency of 84.1%, under an electric field of 2450 kV/cm (i.e. a 49 V voltage bias), are obtained in the 180 nm PL/20 nm PN thin film heterostructure. Due to the small total film thickness the excellent energy-storage properties are obtained at a low operating voltage of 49 V. Moreover, the PL/PN heterostructure also exhibits an excellent charge-discharge endurance up to 1010 cycles and good thermal stability in a wide temperature range from room temperature to 200 °C. These performances show that these heterostructures form a promising design for high-temperature pulse-power capacitors, with superior energy-storage performance at low operating voltages.

Original languageEnglish
Pages (from-to)193-201
Number of pages9
JournalEnergy Storage Materials
Volume25
Early online date16 Oct 2019
DOIs
Publication statusPublished - 1 Mar 2020

    Fingerprint

Keywords

  • UT-Hybrid-D
  • Energy storage performance
  • Heterostructure
  • Imprint phenomenon
  • Relaxor ferroelectric
  • Electric breakdown strength

Cite this