Relaxor-ferroelectric thin film heterostructure with large imprint for high energy-storage performance at low operating voltage

Minh D. Nguyen*, Evert P. Houwman, Minh T. Do, Guus Rijnders

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

1 Citation (Scopus)
1 Downloads (Pure)

Abstract

Excellent energy storage performance in combination with a low operating voltage is a very important factor for pulse-power dielectric capacitor devices to achieve miniaturization and integration. Here the heterostructure of the relaxor ferroelectric Pb0.9La0.1(Zr0.52Ti0.48)O3 (PL), with a slim hysteresis loop, on the normal ferroelectric Pb(Zr0.52Ti0.48)0.99Nb0.01O3 (PN), causing a large voltage imprint, is shown to improve the energy-storage performance. A large recoverable energy-storage density of 43.5 J/cm3 and a high energy-storage efficiency of 84.1%, under an electric field of 2450 kV/cm (i.e. a 49 V voltage bias), are obtained in the 180 nm PL/20 nm PN thin film heterostructure. Due to the small total film thickness the excellent energy-storage properties are obtained at a low operating voltage of 49 V. Moreover, the PL/PN heterostructure also exhibits an excellent charge-discharge endurance up to 1010 cycles and good thermal stability in a wide temperature range from room temperature to 200 °C. These performances show that these heterostructures form a promising design for high-temperature pulse-power capacitors, with superior energy-storage performance at low operating voltages.

Original languageEnglish
Pages (from-to)193-201
JournalEnergy Storage Materials
Volume25
Early online date16 Oct 2019
DOIs
Publication statusE-pub ahead of print/First online - 16 Oct 2019

Fingerprint

Ferroelectric thin films
Energy storage
Heterojunctions
Electric potential
Ferroelectric materials
Capacitors
Hysteresis loops
Bias voltage
Temperature
Film thickness
Durability
Thermodynamic stability
Electric fields
Thin films

Keywords

  • UT-Hybrid-D
  • Energy storage performance
  • Heterostructure
  • Imprint phenomenon
  • Relaxor ferroelectric
  • Electric breakdown strength

Cite this

@article{66b68bd47fde44d6895da764786e9ace,
title = "Relaxor-ferroelectric thin film heterostructure with large imprint for high energy-storage performance at low operating voltage",
abstract = "Excellent energy storage performance in combination with a low operating voltage is a very important factor for pulse-power dielectric capacitor devices to achieve miniaturization and integration. Here the heterostructure of the relaxor ferroelectric Pb0.9La0.1(Zr0.52Ti0.48)O3 (PL), with a slim hysteresis loop, on the normal ferroelectric Pb(Zr0.52Ti0.48)0.99Nb0.01O3 (PN), causing a large voltage imprint, is shown to improve the energy-storage performance. A large recoverable energy-storage density of 43.5 J/cm3 and a high energy-storage efficiency of 84.1{\%}, under an electric field of 2450 kV/cm (i.e. a 49 V voltage bias), are obtained in the 180 nm PL/20 nm PN thin film heterostructure. Due to the small total film thickness the excellent energy-storage properties are obtained at a low operating voltage of 49 V. Moreover, the PL/PN heterostructure also exhibits an excellent charge-discharge endurance up to 1010 cycles and good thermal stability in a wide temperature range from room temperature to 200 °C. These performances show that these heterostructures form a promising design for high-temperature pulse-power capacitors, with superior energy-storage performance at low operating voltages.",
keywords = "UT-Hybrid-D, Energy storage performance, Heterostructure, Imprint phenomenon, Relaxor ferroelectric, Electric breakdown strength",
author = "Nguyen, {Minh D.} and Houwman, {Evert P.} and Do, {Minh T.} and Guus Rijnders",
note = "Elsevier deal",
year = "2019",
month = "10",
day = "16",
doi = "10.1016/j.ensm.2019.10.015",
language = "English",
volume = "25",
pages = "193--201",
journal = "Energy Storage Materials",
issn = "2405-8297",
publisher = "Elsevier",

}

TY - JOUR

T1 - Relaxor-ferroelectric thin film heterostructure with large imprint for high energy-storage performance at low operating voltage

AU - Nguyen, Minh D.

AU - Houwman, Evert P.

AU - Do, Minh T.

AU - Rijnders, Guus

N1 - Elsevier deal

PY - 2019/10/16

Y1 - 2019/10/16

N2 - Excellent energy storage performance in combination with a low operating voltage is a very important factor for pulse-power dielectric capacitor devices to achieve miniaturization and integration. Here the heterostructure of the relaxor ferroelectric Pb0.9La0.1(Zr0.52Ti0.48)O3 (PL), with a slim hysteresis loop, on the normal ferroelectric Pb(Zr0.52Ti0.48)0.99Nb0.01O3 (PN), causing a large voltage imprint, is shown to improve the energy-storage performance. A large recoverable energy-storage density of 43.5 J/cm3 and a high energy-storage efficiency of 84.1%, under an electric field of 2450 kV/cm (i.e. a 49 V voltage bias), are obtained in the 180 nm PL/20 nm PN thin film heterostructure. Due to the small total film thickness the excellent energy-storage properties are obtained at a low operating voltage of 49 V. Moreover, the PL/PN heterostructure also exhibits an excellent charge-discharge endurance up to 1010 cycles and good thermal stability in a wide temperature range from room temperature to 200 °C. These performances show that these heterostructures form a promising design for high-temperature pulse-power capacitors, with superior energy-storage performance at low operating voltages.

AB - Excellent energy storage performance in combination with a low operating voltage is a very important factor for pulse-power dielectric capacitor devices to achieve miniaturization and integration. Here the heterostructure of the relaxor ferroelectric Pb0.9La0.1(Zr0.52Ti0.48)O3 (PL), with a slim hysteresis loop, on the normal ferroelectric Pb(Zr0.52Ti0.48)0.99Nb0.01O3 (PN), causing a large voltage imprint, is shown to improve the energy-storage performance. A large recoverable energy-storage density of 43.5 J/cm3 and a high energy-storage efficiency of 84.1%, under an electric field of 2450 kV/cm (i.e. a 49 V voltage bias), are obtained in the 180 nm PL/20 nm PN thin film heterostructure. Due to the small total film thickness the excellent energy-storage properties are obtained at a low operating voltage of 49 V. Moreover, the PL/PN heterostructure also exhibits an excellent charge-discharge endurance up to 1010 cycles and good thermal stability in a wide temperature range from room temperature to 200 °C. These performances show that these heterostructures form a promising design for high-temperature pulse-power capacitors, with superior energy-storage performance at low operating voltages.

KW - UT-Hybrid-D

KW - Energy storage performance

KW - Heterostructure

KW - Imprint phenomenon

KW - Relaxor ferroelectric

KW - Electric breakdown strength

U2 - 10.1016/j.ensm.2019.10.015

DO - 10.1016/j.ensm.2019.10.015

M3 - Article

AN - SCOPUS:85074431498

VL - 25

SP - 193

EP - 201

JO - Energy Storage Materials

JF - Energy Storage Materials

SN - 2405-8297

ER -