Reliability aspects of a radiation detector fabricated by post-processing a standard CMOS chip

Cora Salm, V.M. Blanco Carballo, J. Melai, Jurriaan Schmitz

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    Abstract

    This paper describes various reliability concerns of the newly developed INGRID detector. This radiation detector is fabricated by waferscale CMOS post-processing; fresh detectors show excellent performance. Since the microsystems will be used unpackaged they are susceptible to all kinds of environmental conditions. The device passed tests of micro-ESD, radiation hardness, dielectric strength; but humidity tests show one weakness of SU-8 as a structural material. Already after 1 day of exposure to a humid condition the structural integrity, as measured by a shear stress test, is dramatically lowered. Dry storage of these devices is therefore a necessity. KMPR photoresist shows promising results as an alternative structural material.
    Original languageUndefined
    Article number10.1016/j.microrel.2008.06.038
    Pages (from-to)1139-1143
    Number of pages4
    JournalMicroelectronics reliability
    Volume48
    Issue numberWoTUG-31/8-9
    DOIs
    Publication statusPublished - 10 Aug 2008

    Keywords

    • SC-ICRY: Integrated Circuit Reliability and Yield
    • METIS-254976
    • IR-62594
    • EWI-14568

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