This paper describes various reliability concerns of the newly developed INGRID detector. This radiation detector is fabricated by waferscale CMOS post-processing; fresh detectors show excellent performance. Since the microsystems will be used unpackaged they are susceptible to all kinds of environmental conditions. The device passed tests of micro-ESD, radiation hardness, dielectric strength; but humidity tests show one weakness of SU-8 as a structural material. Already after 1 day of exposure to a humid condition the structural integrity, as measured by a shear stress test, is dramatically lowered. Dry storage of these devices is therefore a necessity. KMPR photoresist shows promising results as an alternative structural material.
- SC-ICRY: Integrated Circuit Reliability and Yield
Salm, C., Blanco Carballo, V. M., Melai, J., & Schmitz, J. (2008). Reliability aspects of a radiation detector fabricated by post-processing a standard CMOS chip. Microelectronics reliability, 48(WoTUG-31/8-9), 1139-1143. [10.1016/j.microrel.2008.06.038]. https://doi.org/10.1016/j.microrel.2008.06.038