Reliability engineering in RF CMOS

G.T. Sasse

    Research output: ThesisPhD Thesis - Research UT, graduation UT

    252 Downloads (Pure)

    Abstract

    In this thesis new developments are presented for reliability engineering in RF CMOS. Given the increase in use of CMOS technology in applications for mobile communication, also the reliability of CMOS for such applications becomes increasingly important. When applied in these applications, CMOS is typically referred to as RF CMOS, where RF stands for radio frequencies.
    Original languageUndefined
    Awarding Institution
    • University of Twente
    Supervisors/Advisors
    • Schmitz, Jurriaan , Supervisor
    • Kuper, F.G., Supervisor
    Thesis sponsors
    Award date4 Jul 2008
    Place of PublicationEnschede
    Publisher
    Print ISBNs978-90-365-2690-6
    DOIs
    Publication statusPublished - 4 Jul 2008

    Keywords

    • SC-ICRY: Integrated Circuit Reliability and Yield
    • EWI-13183
    • IR-59032
    • METIS-251124

    Cite this

    Sasse, G. T. (2008). Reliability engineering in RF CMOS. Enschede: Ipskamp Printing. https://doi.org/10.3990/1.9789036526906