Reliability engineering in RF CMOS

G.T. Sasse

doi:10.3990/1.9789036526906

Reliability engineering in RF CMOS

G.T. Sasse

Research output: Thesis › PhD Thesis - Research UT, graduation UT

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Abstract

In this thesis new developments are presented for reliability engineering in RF CMOS. Given the increase in use of CMOS technology in applications for mobile communication, also the reliability of CMOS for such applications becomes increasingly important. When applied in these applications, CMOS is typically referred to as RF CMOS, where RF stands for radio frequencies.

Original language	English
Qualification	Doctor of Philosophy
Awarding Institution	University of Twente
Supervisors/Advisors	Schmitz, Jurriaan, Supervisor Kuper, F.G., Supervisor
Thesis sponsors	Dutch Technology Foundation (STW)
Award date	4 Jul 2008
Place of Publication	Enschede
Publisher	Ipskamp Printing
Print ISBNs	978-90-365-2690-6
DOIs	https://doi.org/10.3990/1.9789036526906
Publication status	Published - 4 Jul 2008

Keywords

SC-ICRY: Integrated Circuit Reliability and Yield
EWI-13183
IR-59032
METIS-251124

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10.3990/1.9789036526906

thesis_SasseFinal published version, 3.29 MB
thesis_SasseFinal published version, 3.29 MB

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title = "Reliability engineering in RF CMOS",

abstract = "In this thesis new developments are presented for reliability engineering in RF CMOS. Given the increase in use of CMOS technology in applications for mobile communication, also the reliability of CMOS for such applications becomes increasingly important. When applied in these applications, CMOS is typically referred to as RF CMOS, where RF stands for radio frequencies.",

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SN - 978-90-365-2690-6

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Reliability engineering in RF CMOS

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Keywords

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