Reliability issues related to laser-annealed implanted back-wafer contacts in bipolar silicon-on-glass processes

G. Lorito*, V. Gonda, S. Liu, T.L.M. Scholtes, H. Schellevis, L.K. Nanver

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

2 Citations (Scopus)

Abstract

Silicon-on-glass vertical NPN's and PNP's with collector contacts on the back of the wafer directly under the emitter are investigated in relationship to the collector contacting method. Increased base-leakage and impact-ionization currents were found when the collector contacts were implanted. This effect is related to the residual implantation damage at a distance from the contact that cannot be thermal annealed during the low temperature back-wafer processing.

Original languageEnglish
Title of host publication2006 25th International Conference on Microelectronics
Subtitle of host publicationProceedings
Pages369-372
Number of pages4
DOIs
Publication statusPublished - 1 Dec 2006
Externally publishedYes
Event2006 25th International Conference on Microelectronics, MIEL 2006 - Belgrade, Serbia
Duration: 14 May 200617 May 2006
Conference number: 25

Conference

Conference2006 25th International Conference on Microelectronics, MIEL 2006
Abbreviated titleMIEL 2006
CountrySerbia
CityBelgrade
Period14/05/0617/05/06

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