Reliability issues related to laser-annealed implanted back-wafer contacts in bipolar silicon-on-glass processes

G. Lorito; V. Gonda; S. Liu; T.L.M. Scholtes; H. Schellevis; L.K. Nanver

doi:10.1109/ICMEL.2006.1650969

Reliability issues related to laser-annealed implanted back-wafer contacts in bipolar silicon-on-glass processes

G. Lorito^*, V. Gonda, S. Liu, T.L.M. Scholtes, H. Schellevis, L.K. Nanver

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

2 Citations (Scopus)

Abstract

Silicon-on-glass vertical NPN's and PNP's with collector contacts on the back of the wafer directly under the emitter are investigated in relationship to the collector contacting method. Increased base-leakage and impact-ionization currents were found when the collector contacts were implanted. This effect is related to the residual implantation damage at a distance from the contact that cannot be thermal annealed during the low temperature back-wafer processing.

Original language	English
Title of host publication	2006 25th International Conference on Microelectronics
Subtitle of host publication	Proceedings
Pages	369-372
Number of pages	4
DOIs	https://doi.org/10.1109/ICMEL.2006.1650969
Publication status	Published - 1 Dec 2006
Externally published	Yes
Event	2006 25th International Conference on Microelectronics, MIEL 2006 - Belgrade, Serbia Duration: 14 May 2006 → 17 May 2006 Conference number: 25

Conference

Conference	2006 25th International Conference on Microelectronics, MIEL 2006
Abbreviated title	MIEL 2006
Country/Territory	Serbia
City	Belgrade
Period	14/05/06 → 17/05/06

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10.1109/ICMEL.2006.1650969

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@inproceedings{eb6a55638ee142bb8cdc0bb9d12e5cb0,

title = "Reliability issues related to laser-annealed implanted back-wafer contacts in bipolar silicon-on-glass processes",

abstract = "Silicon-on-glass vertical NPN's and PNP's with collector contacts on the back of the wafer directly under the emitter are investigated in relationship to the collector contacting method. Increased base-leakage and impact-ionization currents were found when the collector contacts were implanted. This effect is related to the residual implantation damage at a distance from the contact that cannot be thermal annealed during the low temperature back-wafer processing.",

author = "G. Lorito and V. Gonda and S. Liu and T.L.M. Scholtes and H. Schellevis and L.K. Nanver",

year = "2006",

month = dec,

day = "1",

doi = "10.1109/ICMEL.2006.1650969",

language = "English",

isbn = "1424401178",

pages = "369--372",

booktitle = "2006 25th International Conference on Microelectronics",

note = "2006 25th International Conference on Microelectronics, MIEL 2006, MIEL 2006 ; Conference date: 14-05-2006 Through 17-05-2006",

}

Lorito, G, Gonda, V, Liu, S, Scholtes, TLM, Schellevis, H & Nanver, LK 2006, Reliability issues related to laser-annealed implanted back-wafer contacts in bipolar silicon-on-glass processes. in 2006 25th International Conference on Microelectronics: Proceedings., 1650969, pp. 369-372, 2006 25th International Conference on Microelectronics, MIEL 2006, Belgrade, Serbia, 14/05/06. https://doi.org/10.1109/ICMEL.2006.1650969

TY - GEN

T1 - Reliability issues related to laser-annealed implanted back-wafer contacts in bipolar silicon-on-glass processes

AU - Lorito, G.

AU - Gonda, V.

AU - Liu, S.

AU - Scholtes, T.L.M.

AU - Schellevis, H.

AU - Nanver, L.K.

N1 - Conference code: 25

PY - 2006/12/1

Y1 - 2006/12/1

N2 - Silicon-on-glass vertical NPN's and PNP's with collector contacts on the back of the wafer directly under the emitter are investigated in relationship to the collector contacting method. Increased base-leakage and impact-ionization currents were found when the collector contacts were implanted. This effect is related to the residual implantation damage at a distance from the contact that cannot be thermal annealed during the low temperature back-wafer processing.

AB - Silicon-on-glass vertical NPN's and PNP's with collector contacts on the back of the wafer directly under the emitter are investigated in relationship to the collector contacting method. Increased base-leakage and impact-ionization currents were found when the collector contacts were implanted. This effect is related to the residual implantation damage at a distance from the contact that cannot be thermal annealed during the low temperature back-wafer processing.

UR - http://www.scopus.com/inward/record.url?scp=51749104660&partnerID=8YFLogxK

U2 - 10.1109/ICMEL.2006.1650969

DO - 10.1109/ICMEL.2006.1650969

M3 - Conference contribution

AN - SCOPUS:51749104660

SN - 1424401178

SN - 9781424401178

SP - 369

EP - 372

BT - 2006 25th International Conference on Microelectronics

T2 - 2006 25th International Conference on Microelectronics, MIEL 2006

Y2 - 14 May 2006 through 17 May 2006

ER -

Reliability issues related to laser-annealed implanted back-wafer contacts in bipolar silicon-on-glass processes

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