Research update: Enhanced energy storage density and energy efficiency of epitaxial Pb0.9La0.1(Zr0.52Ti0.48)O3 relaxor-ferroelectric thin-films deposited on silicon by pulsed laser deposition

Duc Minh Nguyen; Evert Pieter Houwman; Jan M. Dekkers; Chi T.Q. Nguyen; Hung N. Vu; Augustinus J.H.M. Rijnders

doi:10.1063/1.4961636

Research update: Enhanced energy storage density and energy efficiency of epitaxial Pb0.9La0.1(Zr0.52Ti0.48)O3 relaxor-ferroelectric thin-films deposited on silicon by pulsed laser deposition

Duc Minh Nguyen, Evert Pieter Houwman, Jan M. Dekkers, Chi T.Q. Nguyen, Hung N. Vu, Augustinus J.H.M. Rijnders

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Pb 0.9La0.1(Zr0.52Ti0.48)O3 (PLZT) relaxor-ferroelectric thin films were grown on SrRuO3/SrTiO3/Si substrates by pulsed laser deposition. A large recoverable storage density (U reco) of 13.7 J/cm3 together with a high energy efficiency (η) of 88.2% under an applied electric field of 1000 kV/cm and at 1 kHz frequency was obtained in 300-nm-thick epitaxial PLZT thin films. These high values are due to the slim and asymmetric hysteresis loop when compared to the values in the reference undoped epitaxial lead zirconate titanate Pb(Zr0.52Ti0.48)O3 ferroelectric thin films (U reco = 9.2 J/cm3 and η = 56.4%) which have a high remanent polarization and a small shift in the hysteresis loop, under the same electric field.

Original language	English
Article number	080701
Number of pages	8
Journal	APL materials
Volume	4
DOIs	https://doi.org/10.1063/1.4961636
Publication status	Published - 2016

Keywords

METIS-317896
IR-101397

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Nguyen2016researchFinal published version, 2.26 MBLicence: CC BY

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title = "Research update: Enhanced energy storage density and energy efficiency of epitaxial Pb0.9La0.1(Zr0.52Ti0.48)O3 relaxor-ferroelectric thin-films deposited on silicon by pulsed laser deposition",

abstract = "Pb 0.9La0.1(Zr0.52Ti0.48)O3 (PLZT) relaxor-ferroelectric thin films were grown on SrRuO3/SrTiO3/Si substrates by pulsed laser deposition. A large recoverable storage density (U reco) of 13.7 J/cm3 together with a high energy efficiency (η) of 88.2% under an applied electric field of 1000 kV/cm and at 1 kHz frequency was obtained in 300-nm-thick epitaxial PLZT thin films. These high values are due to the slim and asymmetric hysteresis loop when compared to the values in the reference undoped epitaxial lead zirconate titanate Pb(Zr0.52Ti0.48)O3 ferroelectric thin films (U reco = 9.2 J/cm3 and η = 56.4%) which have a high remanent polarization and a small shift in the hysteresis loop, under the same electric field.",

keywords = "METIS-317896, IR-101397",

author = "Nguyen, {Duc Minh} and Houwman, {Evert Pieter} and Dekkers, {Jan M.} and Nguyen, {Chi T.Q.} and Vu, {Hung N.} and Rijnders, {Augustinus J.H.M.}",

note = "Open access ",

year = "2016",

doi = "10.1063/1.4961636",

language = "English",

volume = "4",

journal = "APL materials",

issn = "2166-532X",

publisher = "American Institute of Physics",

}

Research update: Enhanced energy storage density and energy efficiency of epitaxial Pb0.9La0.1(Zr0.52Ti0.48)O3 relaxor-ferroelectric thin-films deposited on silicon by pulsed laser deposition. / Nguyen, Duc Minh ; Houwman, Evert Pieter; Dekkers, Jan M. et al.
In: APL materials, Vol. 4, 080701, 2016.

Research output: Contribution to journal › Article › Academic › peer-review

TY - JOUR

T1 - Research update: Enhanced energy storage density and energy efficiency of epitaxial Pb0.9La0.1(Zr0.52Ti0.48)O3 relaxor-ferroelectric thin-films deposited on silicon by pulsed laser deposition

AU - Nguyen, Duc Minh

AU - Houwman, Evert Pieter

AU - Dekkers, Jan M.

AU - Nguyen, Chi T.Q.

AU - Vu, Hung N.

AU - Rijnders, Augustinus J.H.M.

N1 - Open access

PY - 2016

Y1 - 2016

N2 - Pb 0.9La0.1(Zr0.52Ti0.48)O3 (PLZT) relaxor-ferroelectric thin films were grown on SrRuO3/SrTiO3/Si substrates by pulsed laser deposition. A large recoverable storage density (U reco) of 13.7 J/cm3 together with a high energy efficiency (η) of 88.2% under an applied electric field of 1000 kV/cm and at 1 kHz frequency was obtained in 300-nm-thick epitaxial PLZT thin films. These high values are due to the slim and asymmetric hysteresis loop when compared to the values in the reference undoped epitaxial lead zirconate titanate Pb(Zr0.52Ti0.48)O3 ferroelectric thin films (U reco = 9.2 J/cm3 and η = 56.4%) which have a high remanent polarization and a small shift in the hysteresis loop, under the same electric field.

AB - Pb 0.9La0.1(Zr0.52Ti0.48)O3 (PLZT) relaxor-ferroelectric thin films were grown on SrRuO3/SrTiO3/Si substrates by pulsed laser deposition. A large recoverable storage density (U reco) of 13.7 J/cm3 together with a high energy efficiency (η) of 88.2% under an applied electric field of 1000 kV/cm and at 1 kHz frequency was obtained in 300-nm-thick epitaxial PLZT thin films. These high values are due to the slim and asymmetric hysteresis loop when compared to the values in the reference undoped epitaxial lead zirconate titanate Pb(Zr0.52Ti0.48)O3 ferroelectric thin films (U reco = 9.2 J/cm3 and η = 56.4%) which have a high remanent polarization and a small shift in the hysteresis loop, under the same electric field.

KW - METIS-317896

KW - IR-101397

U2 - 10.1063/1.4961636

DO - 10.1063/1.4961636

M3 - Article

SN - 2166-532X

VL - 4

JO - APL materials

JF - APL materials

M1 - 080701

ER -

Research update: Enhanced energy storage density and energy efficiency of epitaxial Pb0.9La0.1(Zr0.52Ti0.48)O3 relaxor-ferroelectric thin-films deposited on silicon by pulsed laser deposition

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Keywords

UN SDGs

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