Abstract
In this work the residual stress of various low temperature chemical vapor deposited (LPCVD) thin films on sapphire, viz. poly-silicon (poly-Si), stoichiometric silicon nitride (Si3N4) and silicon dioxide (SiO2), is analyzed using profilometric curvature measurements and stress diagnostic microstructures of as-deposited as well as annealed films. The found data is used to fabricate single deposition run, 1.35 μm thick, suspended low stress Si3N4 waveguide on sapphire. We foresee that this platform opens the way towards new photonic systems.
Original language | English |
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Title of host publication | 2023 22nd International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers 2023 |
Publisher | IEEE |
Pages | 2086-2089 |
Number of pages | 4 |
ISBN (Electronic) | 9784886864352 |
Publication status | Published - 7 May 2024 |
Event | 22nd International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers 2023 - Kyoto, Japan Duration: 25 Jun 2023 → 29 Jun 2023 Conference number: 22 |
Conference
Conference | 22nd International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers 2023 |
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Abbreviated title | Transducers 2023 |
Country/Territory | Japan |
City | Kyoto |
Period | 25/06/23 → 29/06/23 |
Keywords
- 2024 OA procedure
- Residual stress
- sapphire
- SiN
- suspended waveguide
- TEOS SiO
- thin film
- poly-Si