Residual Stress Analysis of Thin Film Materials for Fabricating Suspended Low Stress Si3N4 Waveguides on Sapphire

Erwin Berenschot*, Simen Martinussen, Kai Wang, Sonia García-Blanco, Niels Tas, Roald Tiggelaar

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

In this work the residual stress of various low temperature chemical vapor deposited (LPCVD) thin films on sapphire, viz. poly-silicon (poly-Si), stoichiometric silicon nitride (Si3N4) and silicon dioxide (SiO2), is analyzed using profilometric curvature measurements and stress diagnostic microstructures of as-deposited as well as annealed films. The found data is used to fabricate single deposition run, 1.35 μm thick, suspended low stress Si3N4 waveguide on sapphire. We foresee that this platform opens the way towards new photonic systems.

Original languageEnglish
Title of host publication2023 22nd International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers 2023
PublisherIEEE
Pages2086-2089
Number of pages4
ISBN (Electronic)9784886864352
Publication statusPublished - 7 May 2024
Event22nd International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers 2023 - Kyoto, Japan
Duration: 25 Jun 202329 Jun 2023
Conference number: 22

Conference

Conference22nd International Conference on Solid-State Sensors, Actuators and Microsystems, Transducers 2023
Abbreviated titleTransducers 2023
Country/TerritoryJapan
CityKyoto
Period25/06/2329/06/23

Keywords

  • 2024 OA procedure
  • Residual stress
  • sapphire
  • SiN
  • suspended waveguide
  • TEOS SiO
  • thin film
  • poly-Si

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