Resistive switching studies in VO2 thin films

Abhimanyu Rana; Chuan Li; Gertjan Koster; Hans Hilgenkamp

doi:10.1038/s41598-020-60373-z

Resistive switching studies in VO₂ thin films

Abhimanyu Rana, Chuan Li, Gertjan Koster, Hans Hilgenkamp^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

The hysteretic insulator-to-metal transition of VO₂ is studied in detail for pulsed laser deposition grown thin films on TiO₂ substrates, under variation of temperature and applied bias currents. This system is of interest for novel electronics based on memristive concepts, in particular as the resistive transition in these films occurs close to room temperature. Multiple, stable resistance states can be set controllably in the temperature range of the hysteretic phase transition by tailored temperature sweeps or by Joule heating induced by current pulses.

Original language	English
Article number	3293
Journal	Scientific reports
Volume	10
Issue number	1
DOIs	https://doi.org/10.1038/s41598-020-60373-z
Publication status	Published - 24 Feb 2020

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10.1038/s41598-020-60373-zLicence: CC BY

resistiveFinal published version, 2.3 MBLicence: CC BY

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Resistive switching studies in VO₂ thin films

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