Resistive switching studies in VO2 thin films

Abhimanyu Rana, Chuan Li, Gertjan Koster, Hans Hilgenkamp*

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

3 Citations (Scopus)
202 Downloads (Pure)


The hysteretic insulator-to-metal transition of VO2 is studied in detail for pulsed laser deposition grown thin films on TiO2 substrates, under variation of temperature and applied bias currents. This system is of interest for novel electronics based on memristive concepts, in particular as the resistive transition in these films occurs close to room temperature. Multiple, stable resistance states can be set controllably in the temperature range of the hysteretic phase transition by tailored temperature sweeps or by Joule heating induced by current pulses.

Original languageEnglish
Article number3293
JournalScientific reports
Issue number1
Publication statusPublished - 24 Feb 2020


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