Resonant Coupling for Active-Passive Monolithic Integration of Al 2 O 3 and Si 3 N 4

Research output: Contribution to journalArticleAcademicpeer-review

2 Downloads (Pure)

Abstract

The developed double-layer Al 2 O 3 -Si 3 N 4 photonic platform monolithically combines the outstanding optical features of LPCVD Si 3 N 4 and the properties of rare-earth-ion-doped Al 2 O 3 active material. In this letter, a resonant coupling is studied in Al 2 O 3 -Si 3 N 4 couplers by introducing a lateral shift between a lateral Al 2 O 3 taper and a vertical Si 3 N 4 taper. The proposed resonant couplers enable to reduce mode mismatch losses at the taper tips, avoiding submicrometer lithography process while yielding a broadband and fabrication-tolerant performance. Undoped Al 2 O 3 -Si 3 N 4 resonant couplers are fabricated, with measured total losses less than 0.18 dB in the 1460-1635-nm spectral window. The first demonstration of active-passive integration is carried out using resonant couplers between Al 2 O 3 :Er 3+ and Si 3 N 4 waveguides, showing the great potential of our double-layer Al 2 O 3 -Si 3 N 4 platform for the realization of active-passive-integrated functionalities in the Si 3 N 4 technology.

Original languageEnglish
Article number8674816
Pages (from-to)771-774
Number of pages4
JournalIEEE photonics technology letters
Volume31
Issue number10
DOIs
Publication statusPublished - 15 May 2019

Fingerprint

couplers
tapering
Photonics
Lithography
Rare earths
Waveguides
Demonstrations
platforms
Ions
Fabrication
rare earth elements
lithography
photonics
broadband
waveguides
fabrication
shift
ions

Keywords

  • active-passive integration
  • monolithic integration
  • optical coupler
  • Resonant coupling
  • waveguide taper

Cite this

@article{42a75f7c3e1548839f821d7fc5a95b63,
title = "Resonant Coupling for Active-Passive Monolithic Integration of Al 2 O 3 and Si 3 N 4",
abstract = "The developed double-layer Al 2 O 3 -Si 3 N 4 photonic platform monolithically combines the outstanding optical features of LPCVD Si 3 N 4 and the properties of rare-earth-ion-doped Al 2 O 3 active material. In this letter, a resonant coupling is studied in Al 2 O 3 -Si 3 N 4 couplers by introducing a lateral shift between a lateral Al 2 O 3 taper and a vertical Si 3 N 4 taper. The proposed resonant couplers enable to reduce mode mismatch losses at the taper tips, avoiding submicrometer lithography process while yielding a broadband and fabrication-tolerant performance. Undoped Al 2 O 3 -Si 3 N 4 resonant couplers are fabricated, with measured total losses less than 0.18 dB in the 1460-1635-nm spectral window. The first demonstration of active-passive integration is carried out using resonant couplers between Al 2 O 3 :Er 3+ and Si 3 N 4 waveguides, showing the great potential of our double-layer Al 2 O 3 -Si 3 N 4 platform for the realization of active-passive-integrated functionalities in the Si 3 N 4 technology.",
keywords = "active-passive integration, monolithic integration, optical coupler, Resonant coupling, waveguide taper",
author = "Jinfeng Mu and Meindert Dijkstra and Garc{\'i}a-Blanco, {Sonia M.}",
year = "2019",
month = "5",
day = "15",
doi = "10.1109/LPT.2019.2907535",
language = "English",
volume = "31",
pages = "771--774",
journal = "IEEE photonics technology letters",
issn = "1041-1135",
publisher = "IEEE",
number = "10",

}

Resonant Coupling for Active-Passive Monolithic Integration of Al 2 O 3 and Si 3 N 4. / Mu, Jinfeng; Dijkstra, Meindert; García-Blanco, Sonia M.

In: IEEE photonics technology letters, Vol. 31, No. 10, 8674816, 15.05.2019, p. 771-774.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Resonant Coupling for Active-Passive Monolithic Integration of Al 2 O 3 and Si 3 N 4

AU - Mu, Jinfeng

AU - Dijkstra, Meindert

AU - García-Blanco, Sonia M.

PY - 2019/5/15

Y1 - 2019/5/15

N2 - The developed double-layer Al 2 O 3 -Si 3 N 4 photonic platform monolithically combines the outstanding optical features of LPCVD Si 3 N 4 and the properties of rare-earth-ion-doped Al 2 O 3 active material. In this letter, a resonant coupling is studied in Al 2 O 3 -Si 3 N 4 couplers by introducing a lateral shift between a lateral Al 2 O 3 taper and a vertical Si 3 N 4 taper. The proposed resonant couplers enable to reduce mode mismatch losses at the taper tips, avoiding submicrometer lithography process while yielding a broadband and fabrication-tolerant performance. Undoped Al 2 O 3 -Si 3 N 4 resonant couplers are fabricated, with measured total losses less than 0.18 dB in the 1460-1635-nm spectral window. The first demonstration of active-passive integration is carried out using resonant couplers between Al 2 O 3 :Er 3+ and Si 3 N 4 waveguides, showing the great potential of our double-layer Al 2 O 3 -Si 3 N 4 platform for the realization of active-passive-integrated functionalities in the Si 3 N 4 technology.

AB - The developed double-layer Al 2 O 3 -Si 3 N 4 photonic platform monolithically combines the outstanding optical features of LPCVD Si 3 N 4 and the properties of rare-earth-ion-doped Al 2 O 3 active material. In this letter, a resonant coupling is studied in Al 2 O 3 -Si 3 N 4 couplers by introducing a lateral shift between a lateral Al 2 O 3 taper and a vertical Si 3 N 4 taper. The proposed resonant couplers enable to reduce mode mismatch losses at the taper tips, avoiding submicrometer lithography process while yielding a broadband and fabrication-tolerant performance. Undoped Al 2 O 3 -Si 3 N 4 resonant couplers are fabricated, with measured total losses less than 0.18 dB in the 1460-1635-nm spectral window. The first demonstration of active-passive integration is carried out using resonant couplers between Al 2 O 3 :Er 3+ and Si 3 N 4 waveguides, showing the great potential of our double-layer Al 2 O 3 -Si 3 N 4 platform for the realization of active-passive-integrated functionalities in the Si 3 N 4 technology.

KW - active-passive integration

KW - monolithic integration

KW - optical coupler

KW - Resonant coupling

KW - waveguide taper

UR - http://www.scopus.com/inward/record.url?scp=85065596100&partnerID=8YFLogxK

U2 - 10.1109/LPT.2019.2907535

DO - 10.1109/LPT.2019.2907535

M3 - Article

VL - 31

SP - 771

EP - 774

JO - IEEE photonics technology letters

JF - IEEE photonics technology letters

SN - 1041-1135

IS - 10

M1 - 8674816

ER -