Abstract
The developed double-layer Al 2 O 3 -Si 3 N 4 photonic platform monolithically combines the outstanding optical features of LPCVD Si 3 N 4 and the properties of rare-earth-ion-doped Al 2 O 3 active material. In this letter, a resonant coupling is studied in Al 2 O 3 -Si 3 N 4 couplers by introducing a lateral shift between a lateral Al 2 O 3 taper and a vertical Si 3 N 4 taper. The proposed resonant couplers enable to reduce mode mismatch losses at the taper tips, avoiding submicrometer lithography process while yielding a broadband and fabrication-tolerant performance. Undoped Al 2 O 3 -Si 3 N 4 resonant couplers are fabricated, with measured total losses less than 0.18 dB in the 1460-1635-nm spectral window. The first demonstration of active-passive integration is carried out using resonant couplers between Al 2 O 3 :Er 3+ and Si 3 N 4 waveguides, showing the great potential of our double-layer Al 2 O 3 -Si 3 N 4 platform for the realization of active-passive-integrated functionalities in the Si 3 N 4 technology.
Original language | English |
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Article number | 8674816 |
Pages (from-to) | 771-774 |
Number of pages | 4 |
Journal | IEEE photonics technology letters |
Volume | 31 |
Issue number | 10 |
DOIs | |
Publication status | Published - 15 May 2019 |
Keywords
- active-passive integration
- monolithic integration
- optical coupler
- Resonant coupling
- waveguide taper
- 22/4 OA procedure