Resonant proximity effect in normal metal/diffuse ferromagnet/superconductor junctions

T. Yokoyama, Y. Tanaka, Alexandre Avraamovitch Golubov

Research output: Contribution to journalArticleAcademicpeer-review

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Abstract

Resonant proximity effect in the normal metal/insulator/diffusive ferromagnet/insulator/s- wave and d-wave superconductor (N/I/DF/I/S) junctions is studied for various regimes by solving the Usadel equation with the generalized boundary conditions. Conductance of the junction and the density of states in the DF layer are calculated as a function of the insulating barrier heights at the interfaces, the magnitudes of the resistance, Thouless energy, and the exchange field in DF, and the misorientation angle alpha of a d-wave superconductor. It is shown that the resonant proximity effect originating from the exchange field in the DF layer strongly modifies the tunneling conductance and density of states. We have found that, due to the resonant proximity effect, for s-wave junctions a sharp zero bias conductance peak (ZBCP) appears for small Thouless energy, while a broad ZBCP appears for large Thouless energy. The magnitude of this ZBCP can exceed the normal state conductance in contrast to the case of diffusive normal metal/superconductor junctions. Similar structures exist in the density of states in the DF layer. For d-wave junctions at alpha=0, similar structures are predicted in the conductance and the density of states. With the increase of the angle alpha, the magnitude of the resonant ZBCP decreases due to the formation of the midgap Andreev resonant states.
Original languageUndefined
Pages (from-to)094501-
JournalPhysical review B: Condensed matter and materials physics
Volume73
Issue number9
DOIs
Publication statusPublished - 2006

Keywords

  • IR-59094
  • METIS-233427

Cite this

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title = "Resonant proximity effect in normal metal/diffuse ferromagnet/superconductor junctions",
abstract = "Resonant proximity effect in the normal metal/insulator/diffusive ferromagnet/insulator/s- wave and d-wave superconductor (N/I/DF/I/S) junctions is studied for various regimes by solving the Usadel equation with the generalized boundary conditions. Conductance of the junction and the density of states in the DF layer are calculated as a function of the insulating barrier heights at the interfaces, the magnitudes of the resistance, Thouless energy, and the exchange field in DF, and the misorientation angle alpha of a d-wave superconductor. It is shown that the resonant proximity effect originating from the exchange field in the DF layer strongly modifies the tunneling conductance and density of states. We have found that, due to the resonant proximity effect, for s-wave junctions a sharp zero bias conductance peak (ZBCP) appears for small Thouless energy, while a broad ZBCP appears for large Thouless energy. The magnitude of this ZBCP can exceed the normal state conductance in contrast to the case of diffusive normal metal/superconductor junctions. Similar structures exist in the density of states in the DF layer. For d-wave junctions at alpha=0, similar structures are predicted in the conductance and the density of states. With the increase of the angle alpha, the magnitude of the resonant ZBCP decreases due to the formation of the midgap Andreev resonant states.",
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volume = "73",
pages = "094501--",
journal = "Physical review B: Condensed matter and materials physics",
issn = "1098-0121",
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Resonant proximity effect in normal metal/diffuse ferromagnet/superconductor junctions. / Yokoyama, T.; Tanaka, Y.; Golubov, Alexandre Avraamovitch.

In: Physical review B: Condensed matter and materials physics, Vol. 73, No. 9, 2006, p. 094501-.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - Resonant proximity effect in normal metal/diffuse ferromagnet/superconductor junctions

AU - Yokoyama, T.

AU - Tanaka, Y.

AU - Golubov, Alexandre Avraamovitch

PY - 2006

Y1 - 2006

N2 - Resonant proximity effect in the normal metal/insulator/diffusive ferromagnet/insulator/s- wave and d-wave superconductor (N/I/DF/I/S) junctions is studied for various regimes by solving the Usadel equation with the generalized boundary conditions. Conductance of the junction and the density of states in the DF layer are calculated as a function of the insulating barrier heights at the interfaces, the magnitudes of the resistance, Thouless energy, and the exchange field in DF, and the misorientation angle alpha of a d-wave superconductor. It is shown that the resonant proximity effect originating from the exchange field in the DF layer strongly modifies the tunneling conductance and density of states. We have found that, due to the resonant proximity effect, for s-wave junctions a sharp zero bias conductance peak (ZBCP) appears for small Thouless energy, while a broad ZBCP appears for large Thouless energy. The magnitude of this ZBCP can exceed the normal state conductance in contrast to the case of diffusive normal metal/superconductor junctions. Similar structures exist in the density of states in the DF layer. For d-wave junctions at alpha=0, similar structures are predicted in the conductance and the density of states. With the increase of the angle alpha, the magnitude of the resonant ZBCP decreases due to the formation of the midgap Andreev resonant states.

AB - Resonant proximity effect in the normal metal/insulator/diffusive ferromagnet/insulator/s- wave and d-wave superconductor (N/I/DF/I/S) junctions is studied for various regimes by solving the Usadel equation with the generalized boundary conditions. Conductance of the junction and the density of states in the DF layer are calculated as a function of the insulating barrier heights at the interfaces, the magnitudes of the resistance, Thouless energy, and the exchange field in DF, and the misorientation angle alpha of a d-wave superconductor. It is shown that the resonant proximity effect originating from the exchange field in the DF layer strongly modifies the tunneling conductance and density of states. We have found that, due to the resonant proximity effect, for s-wave junctions a sharp zero bias conductance peak (ZBCP) appears for small Thouless energy, while a broad ZBCP appears for large Thouless energy. The magnitude of this ZBCP can exceed the normal state conductance in contrast to the case of diffusive normal metal/superconductor junctions. Similar structures exist in the density of states in the DF layer. For d-wave junctions at alpha=0, similar structures are predicted in the conductance and the density of states. With the increase of the angle alpha, the magnitude of the resonant ZBCP decreases due to the formation of the midgap Andreev resonant states.

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DO - 10.1103/PhysRevB.73.094501

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SP - 094501-

JO - Physical review B: Condensed matter and materials physics

JF - Physical review B: Condensed matter and materials physics

SN - 1098-0121

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