Resonant tunneling in Y(Dy)Ba2Cu3O7−δ/PrBa2Cu3−xGaxO7−δ/Y(Dy)Ba2Cu3O7−δ ramp-type Josephson junctions

A.A. Golubov, M.A.J. Verhoeven, I.A. Devyatov, M.Yu. Kupriyanov, G.J. Gerritsma, H. Rogalla

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We have investigated both experimentally and theoretically the normal state resistance and Josephson critical current of ramp-type Josephson junctions having YBCO (DyBCO) electrodes and 8–30 nm thick Ga-doped barriers PrBa2Cu3−xGaxO7−δ with Ga content x = 0, 0.05 and 0.1. Analysis of the data shows that the behavior of the junctions can be well described by the model assuming transport through a finite number of localized states in the barrier.
Original languageEnglish
Pages (from-to)3261-3262
JournalPhysica C
Issue number5
Publication statusPublished - 1994

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