Resonant tunneling in Y(Dy)Ba2Cu3O7−δ/PrBa2Cu3−xGaxO7−δ/Y(Dy)Ba2Cu3O7−δ ramp-type Josephson junctions

A.A. Golubov; M.A.J. Verhoeven; I.A. Devyatov; M.Yu. Kupriyanov; G.J. Gerritsma; H. Rogalla

doi:10.1016/0921-4534(94)91157-6

Resonant tunneling in Y(Dy)Ba₂Cu₃O_7−δ/PrBa₂Cu_3−xGaxO_7−δ/Y(Dy)Ba₂Cu₃O_7−δ ramp-type Josephson junctions

A.A. Golubov, M.A.J. Verhoeven, I.A. Devyatov, M.Yu. Kupriyanov, G.J. Gerritsma, H. Rogalla

Faculty of Science and Technology

Research output: Contribution to journal › Article › Academic

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Abstract

We have investigated both experimentally and theoretically the normal state resistance and Josephson critical current of ramp-type Josephson junctions having YBCO (DyBCO) electrodes and 8–30 nm thick Ga-doped barriers PrBa₂Cu_3−xGaxO_7−δ with Ga content x = 0, 0.05 and 0.1. Analysis of the data shows that the behavior of the junctions can be well described by the model assuming transport through a finite number of localized states in the barrier.

Original language	English
Pages (from-to)	3261-3262
Journal	Physica C
Volume	235-240
Issue number	5
DOIs	https://doi.org/10.1016/0921-4534(94)91157-6
Publication status	Published - 1994

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@article{f6f3f50ae5934ad188dee2ac369f8d6b,

title = "Resonant tunneling in Y(Dy)Ba2Cu3O7−δ/PrBa2Cu3−xGaxO7−δ/Y(Dy)Ba2Cu3O7−δ ramp-type Josephson junctions",

abstract = "We have investigated both experimentally and theoretically the normal state resistance and Josephson critical current of ramp-type Josephson junctions having YBCO (DyBCO) electrodes and 8–30 nm thick Ga-doped barriers PrBa2Cu3−xGaxO7−δ with Ga content x = 0, 0.05 and 0.1. Analysis of the data shows that the behavior of the junctions can be well described by the model assuming transport through a finite number of localized states in the barrier.",

author = "A.A. Golubov and M.A.J. Verhoeven and I.A. Devyatov and M.Yu. Kupriyanov and G.J. Gerritsma and H. Rogalla",

year = "1994",

doi = "10.1016/0921-4534(94)91157-6",

language = "English",

volume = "235-240",

pages = "3261--3262",

journal = "Physica C",

issn = "0921-4534",

publisher = "Elsevier",

number = "5",

}

TY - JOUR

T1 - Resonant tunneling in Y(Dy)Ba2Cu3O7−δ/PrBa2Cu3−xGaxO7−δ/Y(Dy)Ba2Cu3O7−δ ramp-type Josephson junctions

AU - Golubov, A.A.

AU - Verhoeven, M.A.J.

AU - Devyatov, I.A.

AU - Kupriyanov, M.Yu.

AU - Gerritsma, G.J.

AU - Rogalla, H.

PY - 1994

Y1 - 1994

N2 - We have investigated both experimentally and theoretically the normal state resistance and Josephson critical current of ramp-type Josephson junctions having YBCO (DyBCO) electrodes and 8–30 nm thick Ga-doped barriers PrBa2Cu3−xGaxO7−δ with Ga content x = 0, 0.05 and 0.1. Analysis of the data shows that the behavior of the junctions can be well described by the model assuming transport through a finite number of localized states in the barrier.

AB - We have investigated both experimentally and theoretically the normal state resistance and Josephson critical current of ramp-type Josephson junctions having YBCO (DyBCO) electrodes and 8–30 nm thick Ga-doped barriers PrBa2Cu3−xGaxO7−δ with Ga content x = 0, 0.05 and 0.1. Analysis of the data shows that the behavior of the junctions can be well described by the model assuming transport through a finite number of localized states in the barrier.

U2 - 10.1016/0921-4534(94)91157-6

DO - 10.1016/0921-4534(94)91157-6

M3 - Article

VL - 235-240

SP - 3261

EP - 3262

JO - Physica C

JF - Physica C

SN - 0921-4534

IS - 5

ER -