Abstract
We have investigated both experimentally and theoretically the normal state resistance and Josephson critical current of ramp-type Josephson junctions having YBCO (DyBCO) electrodes and 8–30 nm thick Ga-doped barriers PrBa2Cu3−xGaxO7−δ with Ga content x = 0, 0.05 and 0.1. Analysis of the data shows that the behavior of the junctions can be well described by the model assuming transport through a finite number of localized states in the barrier.
Original language | English |
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Pages (from-to) | 3261-3262 |
Journal | Physica C |
Volume | 235-240 |
Issue number | 5 |
DOIs | |
Publication status | Published - 1994 |