Resonant tunnelling features in quantum dots

C.C. Escott, Floris A. Zwanenburg, A. Morello

Research output: Contribution to journalArticleAcademicpeer-review

54 Citations (Scopus)

Abstract

We present a systematic review of features due to resonant electron tunnelling, observable in transport spectroscopy experiments on quantum dots and single donors. The review covers features attributable to intrinsic properties of the dot (orbital, spin and valley states) as well as extrinsic effects (phonon/photon emission/absorption, features in the charge reservoirs, coupling to nearby charge centres). We focus on the most common operating conditions, neglecting effects due to strong coupling to the leads. By discussing the experimental signatures of each type of feature, we aim at providing practical methods to distinguish between their different physical origins. The correct classification of the resonant tunnelling features is an essential requirement to understand the details of the confining potential or to predict the performance of the dot for quantum information processing.
Original languageEnglish
Article number274018
Number of pages12
JournalNanotechnology
Volume21
Issue number27
DOIs
Publication statusPublished - 22 Jun 2010
Externally publishedYes

Keywords

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