TY - GEN
T1 - Response time of silicon photodiodes for DUV/EUV radiation
AU - Xia, Sha
AU - Sarubi, Francesco
AU - Naulaerts, Rik
AU - Nihtianov, Stoyan
AU - Nanver, Lis
PY - 2008/9/15
Y1 - 2008/9/15
N2 - There is a strong relation between the size, the shape and the location of the illuminated part of a shallow-junction photodiode, and its series resistance [2, 3, 4]. This relation creates an expectation for a big variation of the response time (the time for which the photo-generated charge will be removed from the photodiode) with the illuminated spot size. This is because the time constant of the photodiode, which is one of the main factors defining the response time, is a product of the series resistance multiplied by the junction capacitance. In this work the dependence of the charge removal time of a shallow photodiode on the size of the illuminated area, is studied. Simulation results, as well as measurement data, show that the response time is changing only slightly with the position and the size of the illuminated spot size, when very short light pulses are used. After the incidence light is over, the discharging of the photodiode continues with a time constant, which is highly independent of the size and the location of the illuminated part of the photodiode.
AB - There is a strong relation between the size, the shape and the location of the illuminated part of a shallow-junction photodiode, and its series resistance [2, 3, 4]. This relation creates an expectation for a big variation of the response time (the time for which the photo-generated charge will be removed from the photodiode) with the illuminated spot size. This is because the time constant of the photodiode, which is one of the main factors defining the response time, is a product of the series resistance multiplied by the junction capacitance. In this work the dependence of the charge removal time of a shallow photodiode on the size of the illuminated area, is studied. Simulation results, as well as measurement data, show that the response time is changing only slightly with the position and the size of the illuminated spot size, when very short light pulses are used. After the incidence light is over, the discharging of the photodiode continues with a time constant, which is highly independent of the size and the location of the illuminated part of the photodiode.
KW - Deep ultraviolet/extreme ultraviolet
KW - Radiation detector
KW - Response time
KW - Series resistance
U2 - 10.1109/IMTC.2008.4547368
DO - 10.1109/IMTC.2008.4547368
M3 - Conference contribution
AN - SCOPUS:51349166763
SN - 978-1-4244-1540-3
T3 - IEEE Instrumentation and Measurement Technology Conference. Conference Proceedings
SP - 1956
EP - 1959
BT - 2008 IEEE International Instrumentation and Measurement Technology Conference Proceedings, I2MTC
PB - IEEE
T2 - 2008 IEEE International Instrumentation and Measurement Technology Conference, I2MTC 2008
Y2 - 12 May 2008 through 15 May 2008
ER -