Resurf Stepped Oxide (RSO) MOSFET for 85V having a record-low specific on-resistance

G. E.J. Koops; E. A. Hijzen; R. J.E. Hueting; M. A.A. In't Zandt

doi:10.1109/WCT.2004.239902

Resurf Stepped Oxide (RSO) MOSFET for 85V having a record-low specific on-resistance

G. E.J. Koops^*, E. A. Hijzen, R. J.E. Hueting, M. A.A. In't Zandt

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

63 Citations (Scopus)

Abstract

A Resurf Stepped Oxide (RSO) transistor is presented and electrically characterised. The processed RSO MOSFET includes a trench field-plate network in the drift region that is isolated with a thick oxide layer. This trench network has a hexagonal layout that induces an improved RESURF effect at breakdown compared with the more common stripe (2D) layout. Consequently, the effective doping can be two times higher for the hexagonal layout. We have obtained a record value for the specific on-resistance (R_ds,on) of 58 mΩmm² at V_gs=10V for a breakdown voltage (BV _ds) of 85 V. These values have been obtained for devices having a 4.0 μm cell pitch and a 5 μm long drift region with a doping level of 2-10¹⁶ cm^-3. Measurements of the gate-drain charge density (Q_gd) for these devices show that Q_gd is fully dominated by the oxide capacitance of the field-plate along the drift region.

Original language	English
Title of host publication	2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs
Publisher	IEEE
Pages	185-188
Number of pages	4
ISBN (Print)	4-88686-060-5
DOIs	https://doi.org/10.1109/WCT.2004.239902
Publication status	Published - 18 Oct 2004
Externally published	Yes
Event	16th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2004 - Kitakyushu, Japan Duration: 24 May 2004 → 27 May 2004 Conference number: 16

Conference

Conference	16th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2004
Abbreviated title	ISPSD 2004
Country/Territory	Japan
City	Kitakyushu
Period	24/05/04 → 27/05/04

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10.1109/WCT.2004.239902

Cite this

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title = "Resurf Stepped Oxide (RSO) MOSFET for 85V having a record-low specific on-resistance",

abstract = "A Resurf Stepped Oxide (RSO) transistor is presented and electrically characterised. The processed RSO MOSFET includes a trench field-plate network in the drift region that is isolated with a thick oxide layer. This trench network has a hexagonal layout that induces an improved RESURF effect at breakdown compared with the more common stripe (2D) layout. Consequently, the effective doping can be two times higher for the hexagonal layout. We have obtained a record value for the specific on-resistance (Rds,on) of 58 mΩmm2 at Vgs=10V for a breakdown voltage (BV ds) of 85 V. These values have been obtained for devices having a 4.0 μm cell pitch and a 5 μm long drift region with a doping level of 2-1016 cm-3. Measurements of the gate-drain charge density (Qgd) for these devices show that Qgd is fully dominated by the oxide capacitance of the field-plate along the drift region.",

author = "Koops, {G. E.J.} and Hijzen, {E. A.} and Hueting, {R. J.E.} and {In't Zandt}, {M. A.A.}",

year = "2004",

month = oct,

day = "18",

doi = "10.1109/WCT.2004.239902",

language = "English",

isbn = "4-88686-060-5",

pages = "185--188",

booktitle = "2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs",

publisher = "IEEE",

address = "United States",

note = "16th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2004, ISPSD 2004 ; Conference date: 24-05-2004 Through 27-05-2004",

}

Koops, GEJ, Hijzen, EA, Hueting, RJE & In't Zandt, MAA 2004, Resurf Stepped Oxide (RSO) MOSFET for 85V having a record-low specific on-resistance. in 2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs. IEEE, pp. 185-188, 16th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2004, Kitakyushu, Japan, 24/05/04. https://doi.org/10.1109/WCT.2004.239902

Resurf Stepped Oxide (RSO) MOSFET for 85V having a record-low specific on-resistance. / Koops, G. E.J.; Hijzen, E. A.; Hueting, R. J.E. et al.
2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs. IEEE, 2004. p. 185-188.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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AU - Koops, G. E.J.

AU - Hijzen, E. A.

AU - Hueting, R. J.E.

AU - In't Zandt, M. A.A.

N1 - Conference code: 16

PY - 2004/10/18

Y1 - 2004/10/18

N2 - A Resurf Stepped Oxide (RSO) transistor is presented and electrically characterised. The processed RSO MOSFET includes a trench field-plate network in the drift region that is isolated with a thick oxide layer. This trench network has a hexagonal layout that induces an improved RESURF effect at breakdown compared with the more common stripe (2D) layout. Consequently, the effective doping can be two times higher for the hexagonal layout. We have obtained a record value for the specific on-resistance (Rds,on) of 58 mΩmm2 at Vgs=10V for a breakdown voltage (BV ds) of 85 V. These values have been obtained for devices having a 4.0 μm cell pitch and a 5 μm long drift region with a doping level of 2-1016 cm-3. Measurements of the gate-drain charge density (Qgd) for these devices show that Qgd is fully dominated by the oxide capacitance of the field-plate along the drift region.

AB - A Resurf Stepped Oxide (RSO) transistor is presented and electrically characterised. The processed RSO MOSFET includes a trench field-plate network in the drift region that is isolated with a thick oxide layer. This trench network has a hexagonal layout that induces an improved RESURF effect at breakdown compared with the more common stripe (2D) layout. Consequently, the effective doping can be two times higher for the hexagonal layout. We have obtained a record value for the specific on-resistance (Rds,on) of 58 mΩmm2 at Vgs=10V for a breakdown voltage (BV ds) of 85 V. These values have been obtained for devices having a 4.0 μm cell pitch and a 5 μm long drift region with a doping level of 2-1016 cm-3. Measurements of the gate-drain charge density (Qgd) for these devices show that Qgd is fully dominated by the oxide capacitance of the field-plate along the drift region.

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ER -

Resurf Stepped Oxide (RSO) MOSFET for 85V having a record-low specific on-resistance

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