Resurf Stepped Oxide (RSO) MOSFET for 85V having a record-low specific on-resistance

G. E.J. Koops*, E. A. Hijzen, R. J.E. Hueting, M. A.A. In't Zandt

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

39 Citations (Scopus)

Abstract

A Resurf Stepped Oxide (RSO) transistor is presented and electrically characterised. The processed RSO MOSFET includes a trench field-plate network in the drift region that is isolated with a thick oxide layer. This trench network has a hexagonal layout that induces an improved RESURF effect at breakdown compared with the more common stripe (2D) layout. Consequently, the effective doping can be two times higher for the hexagonal layout. We have obtained a record value for the specific on-resistance (Rds,on) of 58 mΩmm2 at Vgs=10V for a breakdown voltage (BV ds) of 85 V. These values have been obtained for devices having a 4.0 μm cell pitch and a 5 μm long drift region with a doping level of 2-1016 cm-3. Measurements of the gate-drain charge density (Qgd) for these devices show that Qgd is fully dominated by the oxide capacitance of the field-plate along the drift region.

Original languageEnglish
Title of host publication2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs
PublisherIEEE
Pages185-188
Number of pages4
ISBN (Print)4-88686-060-5
DOIs
Publication statusPublished - 18 Oct 2004
Externally publishedYes
Event16th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2004 - Kitakyushu, Japan
Duration: 24 May 200427 May 2004
Conference number: 16

Conference

Conference16th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2004
Abbreviated titleISPSD 2004
CountryJapan
CityKitakyushu
Period24/05/0427/05/04

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    Koops, G. E. J., Hijzen, E. A., Hueting, R. J. E., & In't Zandt, M. A. A. (2004). Resurf Stepped Oxide (RSO) MOSFET for 85V having a record-low specific on-resistance. In 2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs (pp. 185-188). IEEE. https://doi.org/10.1109/WCT.2004.239902