Abstract
In this paper, the reverse biasing and breakdown properties of the PureB diodes are investigated for different methods of processing the PureB anode window and the metal contacting. In particular, micron-sized devices are examined in order to assess their suitability for use in dense imaging arrays that may require operation as avalanche photodiodes to obtain the necessary photosensitivity [6]. For such small devices implanted guard rings cannot be implemented without paying a penalty in fill-factor. At the same time it is also desirable to position the photosensitive area away from the oxide perimeter where permanent damage can be inflicted by high reverse currents. Therefore, a “virtual” guard, using an n-enhancement implantation in the central region of the diode is applied here.
Original language | English |
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Title of host publication | 2013 13th International Workshop on Junction Technology (IWJT) |
Pages | 70-73 |
Number of pages | 4 |
ISBN (Electronic) | 978-1-4799-0580-5 |
DOIs | |
Publication status | Published - 1 Jan 2013 |
Externally published | Yes |
Event | 13th International Workshop on Junction Technology, IWJT 2013 - Kyoto, Japan Duration: 6 Jun 2013 → 7 Jun 2013 Conference number: 13 |
Conference
Conference | 13th International Workshop on Junction Technology, IWJT 2013 |
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Abbreviated title | IWJT 2013 |
Country | Japan |
City | Kyoto |
Period | 6/06/13 → 7/06/13 |