Reverse biasing and breakdown behavior of PureB diodes

Lin Qi; K. R.C. Mok; Mahdi Aminian; Tom L.M. Scholtes; Edoardo Charbon; Lis K. Nanver

doi:10.1109/IWJT.2013.6644508

Reverse biasing and breakdown behavior of PureB diodes

Lin Qi, K. R.C. Mok, Mahdi Aminian, Tom L.M. Scholtes, Edoardo Charbon, Lis K. Nanver

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

Abstract

In this paper, the reverse biasing and breakdown properties of the PureB diodes are investigated for different methods of processing the PureB anode window and the metal contacting. In particular, micron-sized devices are examined in order to assess their suitability for use in dense imaging arrays that may require operation as avalanche photodiodes to obtain the necessary photosensitivity [6]. For such small devices implanted guard rings cannot be implemented without paying a penalty in fill-factor. At the same time it is also desirable to position the photosensitive area away from the oxide perimeter where permanent damage can be inflicted by high reverse currents. Therefore, a “virtual” guard, using an n-enhancement implantation in the central region of the diode is applied here.

Original language	English
Title of host publication	2013 13th International Workshop on Junction Technology (IWJT)
Pages	70-73
Number of pages	4
ISBN (Electronic)	978-1-4799-0580-5
DOIs	https://doi.org/10.1109/IWJT.2013.6644508
Publication status	Published - 1 Jan 2013
Externally published	Yes
Event	13th International Workshop on Junction Technology, IWJT 2013 - Kyoto, Japan Duration: 6 Jun 2013 → 7 Jun 2013 Conference number: 13

Conference

Conference	13th International Workshop on Junction Technology, IWJT 2013
Abbreviated title	IWJT 2013
Country	Japan
City	Kyoto
Period	6/06/13 → 7/06/13

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10.1109/IWJT.2013.6644508

Cite this

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title = "Reverse biasing and breakdown behavior of PureB diodes",

abstract = "In this paper, the reverse biasing and breakdown properties of the PureB diodes are investigated for different methods of processing the PureB anode window and the metal contacting. In particular, micron-sized devices are examined in order to assess their suitability for use in dense imaging arrays that may require operation as avalanche photodiodes to obtain the necessary photosensitivity [6]. For such small devices implanted guard rings cannot be implemented without paying a penalty in fill-factor. At the same time it is also desirable to position the photosensitive area away from the oxide perimeter where permanent damage can be inflicted by high reverse currents. Therefore, a “virtual” guard, using an n-enhancement implantation in the central region of the diode is applied here.",

author = "Lin Qi and Mok, {K. R.C.} and Mahdi Aminian and Scholtes, {Tom L.M.} and Edoardo Charbon and Nanver, {Lis K.}",

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AU - Qi, Lin

AU - Mok, K. R.C.

AU - Aminian, Mahdi

AU - Scholtes, Tom L.M.

AU - Charbon, Edoardo

AU - Nanver, Lis K.

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AB - In this paper, the reverse biasing and breakdown properties of the PureB diodes are investigated for different methods of processing the PureB anode window and the metal contacting. In particular, micron-sized devices are examined in order to assess their suitability for use in dense imaging arrays that may require operation as avalanche photodiodes to obtain the necessary photosensitivity [6]. For such small devices implanted guard rings cannot be implemented without paying a penalty in fill-factor. At the same time it is also desirable to position the photosensitive area away from the oxide perimeter where permanent damage can be inflicted by high reverse currents. Therefore, a “virtual” guard, using an n-enhancement implantation in the central region of the diode is applied here.

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T2 - 13th International Workshop on Junction Technology, IWJT 2013

Y2 - 6 June 2013 through 7 June 2013

ER -

Reverse biasing and breakdown behavior of PureB diodes

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