Reverse biasing and breakdown behavior of PureB diodes

Lin Qi, K. R.C. Mok, Mahdi Aminian, Tom L.M. Scholtes, Edoardo Charbon, Lis K. Nanver

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Abstract

In this paper, the reverse biasing and breakdown properties of the PureB diodes are investigated for different methods of processing the PureB anode window and the metal contacting. In particular, micron-sized devices are examined in order to assess their suitability for use in dense imaging arrays that may require operation as avalanche photodiodes to obtain the necessary photosensitivity [6]. For such small devices implanted guard rings cannot be implemented without paying a penalty in fill-factor. At the same time it is also desirable to position the photosensitive area away from the oxide perimeter where permanent damage can be inflicted by high reverse currents. Therefore, a “virtual” guard, using an n-enhancement implantation in the central region of the diode is applied here.
Original languageEnglish
Title of host publication2013 13th International Workshop on Junction Technology (IWJT)
Pages70-73
Number of pages4
ISBN (Electronic)978-1-4799-0580-5
DOIs
Publication statusPublished - 1 Jan 2013
Externally publishedYes
Event13th International Workshop on Junction Technology, IWJT 2013 - Kyoto, Japan
Duration: 6 Jun 20137 Jun 2013
Conference number: 13

Conference

Conference13th International Workshop on Junction Technology, IWJT 2013
Abbreviated titleIWJT 2013
CountryJapan
CityKyoto
Period6/06/137/06/13

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Qi, L., Mok, K. R. C., Aminian, M., Scholtes, T. L. M., Charbon, E., & Nanver, L. K. (2013). Reverse biasing and breakdown behavior of PureB diodes. In 2013 13th International Workshop on Junction Technology (IWJT) (pp. 70-73) https://doi.org/10.1109/IWJT.2013.6644508