Reverse breakdown and light-emission patterns studied in Si PureB SPADs

Max Krakers, T. Kneževic, L.K. Nanver

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

The relationship between light-emission patterns from silicon avalanche-mode light-emitting diodes (AMLEDs), and avalanche breakdown was investigated using photodiodes fabricated in pure boron (PureB) technology. The quality of the diodes ranged from high-quality, low dark-current devices with abrupt breakdown characteristics that were suitable for operation as single-photon avalanche diodes (SPADs), to diodes with gradually increasing reverse currents before actual breakdown. The reverse I-V characteristics were measured and correlated to light-emission data obtained simultaneously using a PureB photodetector, and inspected using a camera with which distinct emission patterns could be identified. When increasing the voltage far past breakdown, light emission invariably becomes dominant at the photodiode periphery. Based on the examination of a large variety of anode geometries, it is concluded that the most efficient light emission per consumed power is achieved with defect-free narrow-anode diodes that also are applicable as low-dark-count-rate SPADs.

Original languageEnglish
Title of host publication2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Proceedings
EditorsKarolj Skala, Zeljka Car, Predrag Pale, Darko Huljenic, Matej Janjic, Marko Koricic, Vlado Sruk, Slobodan Ribaric, Tihana Galinac Grbac, Zeljko Butkovic, Marina Cicin-Sain, Dejan Skvorc, Mladen Mauher, Snjezana Babic, Stjepan Gros, Boris Vrdoljak, Edvard Tijan
Place of PublicationPiscataway, NJ
PublisherIEEE
Pages30-35
Number of pages6
ISBN (Electronic)9789532330984
ISBN (Print)978-1-5386-9296-7
DOIs
Publication statusPublished - 1 May 2019
Event42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Opatija, Croatia
Duration: 20 May 201924 May 2019
Conference number: 42

Publication series

NameInternational Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)
PublisherIEEE
Volume2019
ISSN (Print)2623-8764

Conference

Conference42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019
Abbreviated titleMIPRO
CountryCroatia
CityOpatija
Period20/05/1924/05/19

Fingerprint

Avalanche diodes
Boron
Light emission
Photons
Diodes
Photodiodes
Anodes
Dark currents
Silicon
Photodetectors
Light emitting diodes
Cameras
Defects
Geometry
Electric potential

Keywords

  • Avalanche breakdown
  • Avalanche-mode LEDs
  • Defects
  • Light-emitting diode (LED)
  • Optocoupler
  • Pure boron
  • Silicon
  • Single-photon avalanche diode (SPAD)

Cite this

Krakers, M., Kneževic, T., & Nanver, L. K. (2019). Reverse breakdown and light-emission patterns studied in Si PureB SPADs. In K. Skala, Z. Car, P. Pale, D. Huljenic, M. Janjic, M. Koricic, V. Sruk, S. Ribaric, T. G. Grbac, Z. Butkovic, M. Cicin-Sain, D. Skvorc, M. Mauher, S. Babic, S. Gros, B. Vrdoljak, ... E. Tijan (Eds.), 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Proceedings (pp. 30-35). [8757007] (International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO); Vol. 2019). Piscataway, NJ: IEEE. https://doi.org/10.23919/MIPRO.2019.8757007
Krakers, Max ; Kneževic, T. ; Nanver, L.K. / Reverse breakdown and light-emission patterns studied in Si PureB SPADs. 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Proceedings. editor / Karolj Skala ; Zeljka Car ; Predrag Pale ; Darko Huljenic ; Matej Janjic ; Marko Koricic ; Vlado Sruk ; Slobodan Ribaric ; Tihana Galinac Grbac ; Zeljko Butkovic ; Marina Cicin-Sain ; Dejan Skvorc ; Mladen Mauher ; Snjezana Babic ; Stjepan Gros ; Boris Vrdoljak ; Edvard Tijan. Piscataway, NJ : IEEE, 2019. pp. 30-35 (International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)).
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abstract = "The relationship between light-emission patterns from silicon avalanche-mode light-emitting diodes (AMLEDs), and avalanche breakdown was investigated using photodiodes fabricated in pure boron (PureB) technology. The quality of the diodes ranged from high-quality, low dark-current devices with abrupt breakdown characteristics that were suitable for operation as single-photon avalanche diodes (SPADs), to diodes with gradually increasing reverse currents before actual breakdown. The reverse I-V characteristics were measured and correlated to light-emission data obtained simultaneously using a PureB photodetector, and inspected using a camera with which distinct emission patterns could be identified. When increasing the voltage far past breakdown, light emission invariably becomes dominant at the photodiode periphery. Based on the examination of a large variety of anode geometries, it is concluded that the most efficient light emission per consumed power is achieved with defect-free narrow-anode diodes that also are applicable as low-dark-count-rate SPADs.",
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Krakers, M, Kneževic, T & Nanver, LK 2019, Reverse breakdown and light-emission patterns studied in Si PureB SPADs. in K Skala, Z Car, P Pale, D Huljenic, M Janjic, M Koricic, V Sruk, S Ribaric, TG Grbac, Z Butkovic, M Cicin-Sain, D Skvorc, M Mauher, S Babic, S Gros, B Vrdoljak & E Tijan (eds), 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Proceedings., 8757007, International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO), vol. 2019, IEEE, Piscataway, NJ, pp. 30-35, 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019, Opatija, Croatia, 20/05/19. https://doi.org/10.23919/MIPRO.2019.8757007

Reverse breakdown and light-emission patterns studied in Si PureB SPADs. / Krakers, Max; Kneževic, T.; Nanver, L.K.

2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Proceedings. ed. / Karolj Skala; Zeljka Car; Predrag Pale; Darko Huljenic; Matej Janjic; Marko Koricic; Vlado Sruk; Slobodan Ribaric; Tihana Galinac Grbac; Zeljko Butkovic; Marina Cicin-Sain; Dejan Skvorc; Mladen Mauher; Snjezana Babic; Stjepan Gros; Boris Vrdoljak; Edvard Tijan. Piscataway, NJ : IEEE, 2019. p. 30-35 8757007 (International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO); Vol. 2019).

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

TY - GEN

T1 - Reverse breakdown and light-emission patterns studied in Si PureB SPADs

AU - Krakers, Max

AU - Kneževic, T.

AU - Nanver, L.K.

PY - 2019/5/1

Y1 - 2019/5/1

N2 - The relationship between light-emission patterns from silicon avalanche-mode light-emitting diodes (AMLEDs), and avalanche breakdown was investigated using photodiodes fabricated in pure boron (PureB) technology. The quality of the diodes ranged from high-quality, low dark-current devices with abrupt breakdown characteristics that were suitable for operation as single-photon avalanche diodes (SPADs), to diodes with gradually increasing reverse currents before actual breakdown. The reverse I-V characteristics were measured and correlated to light-emission data obtained simultaneously using a PureB photodetector, and inspected using a camera with which distinct emission patterns could be identified. When increasing the voltage far past breakdown, light emission invariably becomes dominant at the photodiode periphery. Based on the examination of a large variety of anode geometries, it is concluded that the most efficient light emission per consumed power is achieved with defect-free narrow-anode diodes that also are applicable as low-dark-count-rate SPADs.

AB - The relationship between light-emission patterns from silicon avalanche-mode light-emitting diodes (AMLEDs), and avalanche breakdown was investigated using photodiodes fabricated in pure boron (PureB) technology. The quality of the diodes ranged from high-quality, low dark-current devices with abrupt breakdown characteristics that were suitable for operation as single-photon avalanche diodes (SPADs), to diodes with gradually increasing reverse currents before actual breakdown. The reverse I-V characteristics were measured and correlated to light-emission data obtained simultaneously using a PureB photodetector, and inspected using a camera with which distinct emission patterns could be identified. When increasing the voltage far past breakdown, light emission invariably becomes dominant at the photodiode periphery. Based on the examination of a large variety of anode geometries, it is concluded that the most efficient light emission per consumed power is achieved with defect-free narrow-anode diodes that also are applicable as low-dark-count-rate SPADs.

KW - Avalanche breakdown

KW - Avalanche-mode LEDs

KW - Defects

KW - Light-emitting diode (LED)

KW - Optocoupler

KW - Pure boron

KW - Silicon

KW - Single-photon avalanche diode (SPAD)

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U2 - 10.23919/MIPRO.2019.8757007

DO - 10.23919/MIPRO.2019.8757007

M3 - Conference contribution

SN - 978-1-5386-9296-7

T3 - International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)

SP - 30

EP - 35

BT - 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Proceedings

A2 - Skala, Karolj

A2 - Car, Zeljka

A2 - Pale, Predrag

A2 - Huljenic, Darko

A2 - Janjic, Matej

A2 - Koricic, Marko

A2 - Sruk, Vlado

A2 - Ribaric, Slobodan

A2 - Grbac, Tihana Galinac

A2 - Butkovic, Zeljko

A2 - Cicin-Sain, Marina

A2 - Skvorc, Dejan

A2 - Mauher, Mladen

A2 - Babic, Snjezana

A2 - Gros, Stjepan

A2 - Vrdoljak, Boris

A2 - Tijan, Edvard

PB - IEEE

CY - Piscataway, NJ

ER -

Krakers M, Kneževic T, Nanver LK. Reverse breakdown and light-emission patterns studied in Si PureB SPADs. In Skala K, Car Z, Pale P, Huljenic D, Janjic M, Koricic M, Sruk V, Ribaric S, Grbac TG, Butkovic Z, Cicin-Sain M, Skvorc D, Mauher M, Babic S, Gros S, Vrdoljak B, Tijan E, editors, 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Proceedings. Piscataway, NJ: IEEE. 2019. p. 30-35. 8757007. (International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)). https://doi.org/10.23919/MIPRO.2019.8757007