Reverse breakdown and light-emission patterns studied in Si PureB SPADs

Max Krakers*, T. Kneževic, L.K. Nanver

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    3 Citations (Scopus)

    Abstract

    The relationship between light-emission patterns from silicon avalanche-mode light-emitting diodes (AMLEDs), and avalanche breakdown was investigated using photodiodes fabricated in pure boron (PureB) technology. The quality of the diodes ranged from high-quality, low dark-current devices with abrupt breakdown characteristics that were suitable for operation as single-photon avalanche diodes (SPADs), to diodes with gradually increasing reverse currents before actual breakdown. The reverse I-V characteristics were measured and correlated to light-emission data obtained simultaneously using a PureB photodetector, and inspected using a camera with which distinct emission patterns could be identified. When increasing the voltage far past breakdown, light emission invariably becomes dominant at the photodiode periphery. Based on the examination of a large variety of anode geometries, it is concluded that the most efficient light emission per consumed power is achieved with defect-free narrow-anode diodes that also are applicable as low-dark-count-rate SPADs.

    Original languageEnglish
    Title of host publication2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Proceedings
    EditorsKarolj Skala, Zeljka Car, Predrag Pale, Darko Huljenic, Matej Janjic, Marko Koricic, Vlado Sruk, Slobodan Ribaric, Tihana Galinac Grbac, Zeljko Butkovic, Marina Cicin-Sain, Dejan Skvorc, Mladen Mauher, Snjezana Babic, Stjepan Gros, Boris Vrdoljak, Edvard Tijan
    Place of PublicationPiscataway, NJ
    PublisherIEEE
    Pages30-35
    Number of pages6
    ISBN (Electronic)9789532330984
    ISBN (Print)978-1-5386-9296-7
    DOIs
    Publication statusPublished - 1 May 2019
    Event42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Opatija, Croatia
    Duration: 20 May 201924 May 2019
    Conference number: 42

    Publication series

    NameInternational Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)
    PublisherIEEE
    Volume2019
    ISSN (Print)2623-8764

    Conference

    Conference42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019
    Abbreviated titleMIPRO
    CountryCroatia
    CityOpatija
    Period20/05/1924/05/19

    Keywords

    • Avalanche breakdown
    • Avalanche-mode LEDs
    • Defects
    • Light-emitting diode (LED)
    • Optocoupler
    • Pure boron
    • Silicon
    • Single-photon avalanche diode (SPAD)

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