Reverse breakdown and light-emission patterns studied in Si PureB SPADs

Max Krakers*, T. Kneževic, L.K. Nanver

*Corresponding author for this work

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Abstract

    The relationship between light-emission patterns from silicon avalanche-mode light-emitting diodes (AMLEDs), and avalanche breakdown was investigated using photodiodes fabricated in pure boron (PureB) technology. The quality of the diodes ranged from high-quality, low dark-current devices with abrupt breakdown characteristics that were suitable for operation as single-photon avalanche diodes (SPADs), to diodes with gradually increasing reverse currents before actual breakdown. The reverse I-V characteristics were measured and correlated to light-emission data obtained simultaneously using a PureB photodetector, and inspected using a camera with which distinct emission patterns could be identified. When increasing the voltage far past breakdown, light emission invariably becomes dominant at the photodiode periphery. Based on the examination of a large variety of anode geometries, it is concluded that the most efficient light emission per consumed power is achieved with defect-free narrow-anode diodes that also are applicable as low-dark-count-rate SPADs.

    Original languageEnglish
    Title of host publication2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Proceedings
    EditorsKarolj Skala, Zeljka Car, Predrag Pale, Darko Huljenic, Matej Janjic, Marko Koricic, Vlado Sruk, Slobodan Ribaric, Tihana Galinac Grbac, Zeljko Butkovic, Marina Cicin-Sain, Dejan Skvorc, Mladen Mauher, Snjezana Babic, Stjepan Gros, Boris Vrdoljak, Edvard Tijan
    Place of PublicationPiscataway, NJ
    PublisherIEEE
    Pages30-35
    Number of pages6
    ISBN (Electronic)9789532330984
    ISBN (Print)978-1-5386-9296-7
    DOIs
    Publication statusPublished - 1 May 2019
    Event42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Opatija, Croatia
    Duration: 20 May 201924 May 2019
    Conference number: 42

    Publication series

    NameInternational Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO)
    PublisherIEEE
    Volume2019
    ISSN (Print)2623-8764

    Conference

    Conference42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019
    Abbreviated titleMIPRO
    CountryCroatia
    CityOpatija
    Period20/05/1924/05/19

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    Keywords

    • Avalanche breakdown
    • Avalanche-mode LEDs
    • Defects
    • Light-emitting diode (LED)
    • Optocoupler
    • Pure boron
    • Silicon
    • Single-photon avalanche diode (SPAD)

    Cite this

    Krakers, M., Kneževic, T., & Nanver, L. K. (2019). Reverse breakdown and light-emission patterns studied in Si PureB SPADs. In K. Skala, Z. Car, P. Pale, D. Huljenic, M. Janjic, M. Koricic, V. Sruk, S. Ribaric, T. G. Grbac, Z. Butkovic, M. Cicin-Sain, D. Skvorc, M. Mauher, S. Babic, S. Gros, B. Vrdoljak, ... E. Tijan (Eds.), 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Proceedings (pp. 30-35). [8757007] (International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO); Vol. 2019). Piscataway, NJ: IEEE. https://doi.org/10.23919/MIPRO.2019.8757007