Reverse breakdown and light-emission patterns studied in Si PureB SPADs

Max Krakers; T. Kneževic; L.K. Nanver

doi:10.23919/MIPRO.2019.8757007

Reverse breakdown and light-emission patterns studied in Si PureB SPADs

Max Krakers^*, T. Kneževic, L.K. Nanver

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

3 Citations (Scopus)

3 Downloads (Pure)

Abstract

The relationship between light-emission patterns from silicon avalanche-mode light-emitting diodes (AMLEDs), and avalanche breakdown was investigated using photodiodes fabricated in pure boron (PureB) technology. The quality of the diodes ranged from high-quality, low dark-current devices with abrupt breakdown characteristics that were suitable for operation as single-photon avalanche diodes (SPADs), to diodes with gradually increasing reverse currents before actual breakdown. The reverse I-V characteristics were measured and correlated to light-emission data obtained simultaneously using a PureB photodetector, and inspected using a camera with which distinct emission patterns could be identified. When increasing the voltage far past breakdown, light emission invariably becomes dominant at the photodiode periphery. Based on the examination of a large variety of anode geometries, it is concluded that the most efficient light emission per consumed power is achieved with defect-free narrow-anode diodes that also are applicable as low-dark-count-rate SPADs.

Original language	English
Title of host publication	2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Proceedings
Editors	Karolj Skala, Zeljka Car, Predrag Pale, Darko Huljenic, Matej Janjic, Marko Koricic, Vlado Sruk, Slobodan Ribaric, Tihana Galinac Grbac, Zeljko Butkovic, Marina Cicin-Sain, Dejan Skvorc, Mladen Mauher, Snjezana Babic, Stjepan Gros, Boris Vrdoljak, Edvard Tijan
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	30-35
Number of pages	6
ISBN (Electronic)	9789532330984
ISBN (Print)	978-1-5386-9296-7
DOIs	https://doi.org/10.23919/MIPRO.2019.8757007
Publication status	Published - 1 May 2019
Event	42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Opatija, Croatia Duration: 20 May 2019 → 24 May 2019 Conference number: 42

Conference

Conference	42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019
Abbreviated title	MIPRO
Country/Territory	Croatia
City	Opatija
Period	20/05/19 → 24/05/19

Keywords

Avalanche breakdown
Avalanche-mode LEDs
Defects
Light-emitting diode (LED)
Optocoupler
Pure boron
Silicon
Single-photon avalanche diode (SPAD)

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10.23919/MIPRO.2019.8757007

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Krakers, M., Kneževic, T., & Nanver, L. K. (2019). Reverse breakdown and light-emission patterns studied in Si PureB SPADs. In K. Skala, Z. Car, P. Pale, D. Huljenic, M. Janjic, M. Koricic, V. Sruk, S. Ribaric, T. G. Grbac, Z. Butkovic, M. Cicin-Sain, D. Skvorc, M. Mauher, S. Babic, S. Gros, B. Vrdoljak, & E. Tijan (Eds.), 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Proceedings (pp. 30-35). Article 8757007 IEEE. https://doi.org/10.23919/MIPRO.2019.8757007

Krakers, Max ; Kneževic, T. ; Nanver, L.K. / Reverse breakdown and light-emission patterns studied in Si PureB SPADs. 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Proceedings. editor / Karolj Skala ; Zeljka Car ; Predrag Pale ; Darko Huljenic ; Matej Janjic ; Marko Koricic ; Vlado Sruk ; Slobodan Ribaric ; Tihana Galinac Grbac ; Zeljko Butkovic ; Marina Cicin-Sain ; Dejan Skvorc ; Mladen Mauher ; Snjezana Babic ; Stjepan Gros ; Boris Vrdoljak ; Edvard Tijan. Piscataway, NJ : IEEE, 2019. pp. 30-35

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title = "Reverse breakdown and light-emission patterns studied in Si PureB SPADs",

abstract = "The relationship between light-emission patterns from silicon avalanche-mode light-emitting diodes (AMLEDs), and avalanche breakdown was investigated using photodiodes fabricated in pure boron (PureB) technology. The quality of the diodes ranged from high-quality, low dark-current devices with abrupt breakdown characteristics that were suitable for operation as single-photon avalanche diodes (SPADs), to diodes with gradually increasing reverse currents before actual breakdown. The reverse I-V characteristics were measured and correlated to light-emission data obtained simultaneously using a PureB photodetector, and inspected using a camera with which distinct emission patterns could be identified. When increasing the voltage far past breakdown, light emission invariably becomes dominant at the photodiode periphery. Based on the examination of a large variety of anode geometries, it is concluded that the most efficient light emission per consumed power is achieved with defect-free narrow-anode diodes that also are applicable as low-dark-count-rate SPADs.",

keywords = "Avalanche breakdown, Avalanche-mode LEDs, Defects, Light-emitting diode (LED), Optocoupler, Pure boron, Silicon, Single-photon avalanche diode (SPAD)",

author = "Max Krakers and T. Kne{\v z}evic and L.K. Nanver",

note = "Funding Information: This work was supported by the Croatian Science Foundation under the project IP-2018-01-5296 Publisher Copyright: {\textcopyright} 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Proceedings. All rights reserved.; 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019, MIPRO ; Conference date: 20-05-2019 Through 24-05-2019",

year = "2019",

month = may,

day = "1",

doi = "10.23919/MIPRO.2019.8757007",

language = "English",

isbn = "978-1-5386-9296-7",

pages = "30--35",

editor = "Karolj Skala and Zeljka Car and Predrag Pale and Darko Huljenic and Matej Janjic and Marko Koricic and Vlado Sruk and Slobodan Ribaric and Grbac, {Tihana Galinac} and Zeljko Butkovic and Marina Cicin-Sain and Dejan Skvorc and Mladen Mauher and Snjezana Babic and Stjepan Gros and Boris Vrdoljak and Edvard Tijan",

booktitle = "2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Proceedings",

publisher = "IEEE",

address = "United States",

}

Krakers, M, Kneževic, T & Nanver, LK 2019, Reverse breakdown and light-emission patterns studied in Si PureB SPADs. in K Skala, Z Car, P Pale, D Huljenic, M Janjic, M Koricic, V Sruk, S Ribaric, TG Grbac, Z Butkovic, M Cicin-Sain, D Skvorc, M Mauher, S Babic, S Gros, B Vrdoljak & E Tijan (eds), 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Proceedings., 8757007, IEEE, Piscataway, NJ, pp. 30-35, 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019, Opatija, Croatia, 20/05/19. https://doi.org/10.23919/MIPRO.2019.8757007

Reverse breakdown and light-emission patterns studied in Si PureB SPADs. / Krakers, Max; Kneževic, T.; Nanver, L.K.
2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Proceedings. ed. / Karolj Skala; Zeljka Car; Predrag Pale; Darko Huljenic; Matej Janjic; Marko Koricic; Vlado Sruk; Slobodan Ribaric; Tihana Galinac Grbac; Zeljko Butkovic; Marina Cicin-Sain; Dejan Skvorc; Mladen Mauher; Snjezana Babic; Stjepan Gros; Boris Vrdoljak; Edvard Tijan. Piscataway, NJ: IEEE, 2019. p. 30-35 8757007.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Reverse breakdown and light-emission patterns studied in Si PureB SPADs

AU - Krakers, Max

AU - Kneževic, T.

AU - Nanver, L.K.

N1 - Conference code: 42

PY - 2019/5/1

Y1 - 2019/5/1

N2 - The relationship between light-emission patterns from silicon avalanche-mode light-emitting diodes (AMLEDs), and avalanche breakdown was investigated using photodiodes fabricated in pure boron (PureB) technology. The quality of the diodes ranged from high-quality, low dark-current devices with abrupt breakdown characteristics that were suitable for operation as single-photon avalanche diodes (SPADs), to diodes with gradually increasing reverse currents before actual breakdown. The reverse I-V characteristics were measured and correlated to light-emission data obtained simultaneously using a PureB photodetector, and inspected using a camera with which distinct emission patterns could be identified. When increasing the voltage far past breakdown, light emission invariably becomes dominant at the photodiode periphery. Based on the examination of a large variety of anode geometries, it is concluded that the most efficient light emission per consumed power is achieved with defect-free narrow-anode diodes that also are applicable as low-dark-count-rate SPADs.

AB - The relationship between light-emission patterns from silicon avalanche-mode light-emitting diodes (AMLEDs), and avalanche breakdown was investigated using photodiodes fabricated in pure boron (PureB) technology. The quality of the diodes ranged from high-quality, low dark-current devices with abrupt breakdown characteristics that were suitable for operation as single-photon avalanche diodes (SPADs), to diodes with gradually increasing reverse currents before actual breakdown. The reverse I-V characteristics were measured and correlated to light-emission data obtained simultaneously using a PureB photodetector, and inspected using a camera with which distinct emission patterns could be identified. When increasing the voltage far past breakdown, light emission invariably becomes dominant at the photodiode periphery. Based on the examination of a large variety of anode geometries, it is concluded that the most efficient light emission per consumed power is achieved with defect-free narrow-anode diodes that also are applicable as low-dark-count-rate SPADs.

KW - Avalanche breakdown

KW - Avalanche-mode LEDs

KW - Defects

KW - Light-emitting diode (LED)

KW - Optocoupler

KW - Pure boron

KW - Silicon

KW - Single-photon avalanche diode (SPAD)

UR - http://www.scopus.com/inward/record.url?scp=85070272130&partnerID=8YFLogxK

U2 - 10.23919/MIPRO.2019.8757007

DO - 10.23919/MIPRO.2019.8757007

M3 - Conference contribution

SN - 978-1-5386-9296-7

SP - 30

EP - 35

BT - 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Proceedings

A2 - Skala, Karolj

A2 - Car, Zeljka

A2 - Pale, Predrag

A2 - Huljenic, Darko

A2 - Janjic, Matej

A2 - Koricic, Marko

A2 - Sruk, Vlado

A2 - Ribaric, Slobodan

A2 - Grbac, Tihana Galinac

A2 - Butkovic, Zeljko

A2 - Cicin-Sain, Marina

A2 - Skvorc, Dejan

A2 - Mauher, Mladen

A2 - Babic, Snjezana

A2 - Gros, Stjepan

A2 - Vrdoljak, Boris

A2 - Tijan, Edvard

PB - IEEE

CY - Piscataway, NJ

T2 - 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019

Y2 - 20 May 2019 through 24 May 2019

ER -

Krakers M, Kneževic T, Nanver LK. Reverse breakdown and light-emission patterns studied in Si PureB SPADs. In Skala K, Car Z, Pale P, Huljenic D, Janjic M, Koricic M, Sruk V, Ribaric S, Grbac TG, Butkovic Z, Cicin-Sain M, Skvorc D, Mauher M, Babic S, Gros S, Vrdoljak B, Tijan E, editors, 2019 42nd International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2019 - Proceedings. Piscataway, NJ: IEEE. 2019. p. 30-35. 8757007 doi: 10.23919/MIPRO.2019.8757007

Reverse breakdown and light-emission patterns studied in Si PureB SPADs

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