RF capacitance-voltage characterization of MOSFETs with high-leakage dielectric

J. Schmitz; F.N. Cubaynes; R.J. Havens; R. de Kort; A.J. Scholten; L.F. Tiemeijer

doi:10.1109/LED.2002.807016

RF capacitance-voltage characterization of MOSFETs with high-leakage dielectric

J. Schmitz, F.N. Cubaynes, R.J. Havens, R. de Kort, A.J. Scholten, L.F. Tiemeijer

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Abstract

We present a MOS Capacitance-Voltage measurement methodology that, contrary to present methods, is highly robust against gate leakage current densities up to 1000 A/cm/sup 2/. The methodology features specially designed RF test structures and RF measurement frequencies. It allows MOS parameter extraction in the full range of accumulation, depletion, and inversion.

Original language	English
Pages (from-to)	37-39
Number of pages	3
Journal	IEEE electron device letters
Volume	24
Issue number	1
DOIs	https://doi.org/10.1109/LED.2002.807016
Publication status	Published - 1 Jan 2003

Keywords

Capacitance
RF
MOSFET
Leakage current
MOS capacitor
Tunneling
Capacitance measurement

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10.1109/LED.2002.807016

Schmitz_EDL_2003Submitted version, 99.9 KBLicence: Unspecified

Cite this

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abstract = "We present a MOS Capacitance-Voltage measurement methodology that, contrary to present methods, is highly robust against gate leakage current densities up to 1000 A/cm/sup 2/. The methodology features specially designed RF test structures and RF measurement frequencies. It allows MOS parameter extraction in the full range of accumulation, depletion, and inversion.",

keywords = "Capacitance, RF, MOSFET, Leakage current, MOS capacitor, Tunneling, Capacitance measurement",

author = "J. Schmitz and F.N. Cubaynes and R.J. Havens and {de Kort}, R. and A.J. Scholten and L.F. Tiemeijer",

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AU - Havens, R.J.

AU - de Kort, R.

AU - Scholten, A.J.

AU - Tiemeijer, L.F.

PY - 2003/1/1

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N2 - We present a MOS Capacitance-Voltage measurement methodology that, contrary to present methods, is highly robust against gate leakage current densities up to 1000 A/cm/sup 2/. The methodology features specially designed RF test structures and RF measurement frequencies. It allows MOS parameter extraction in the full range of accumulation, depletion, and inversion.

AB - We present a MOS Capacitance-Voltage measurement methodology that, contrary to present methods, is highly robust against gate leakage current densities up to 1000 A/cm/sup 2/. The methodology features specially designed RF test structures and RF measurement frequencies. It allows MOS parameter extraction in the full range of accumulation, depletion, and inversion.

KW - Capacitance

KW - RF

KW - MOSFET

KW - Leakage current

KW - MOS capacitor

KW - Tunneling

KW - Capacitance measurement

U2 - 10.1109/LED.2002.807016

DO - 10.1109/LED.2002.807016

M3 - Article

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SP - 37

EP - 39

JO - IEEE electron device letters

JF - IEEE electron device letters

SN - 0741-3106

IS - 1

ER -

RF capacitance-voltage characterization of MOSFETs with high-leakage dielectric

Abstract

Keywords

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