RF capacitance-voltage characterization of MOSFETs with high-leakage dielectric

J. Schmitz, F.N. Cubaynes, R.J. Havens, R. de Kort, A.J. Scholten, L.F. Tiemeijer

    Research output: Contribution to journalArticleAcademicpeer-review

    63 Citations (Scopus)
    78 Downloads (Pure)

    Abstract

    We present a MOS Capacitance-Voltage measurement methodology that, contrary to present methods, is highly robust against gate leakage current densities up to 1000 A/cm/sup 2/. The methodology features specially designed RF test structures and RF measurement frequencies. It allows MOS parameter extraction in the full range of accumulation, depletion, and inversion.
    Original languageEnglish
    Pages (from-to)37-39
    Number of pages3
    JournalIEEE electron device letters
    Volume24
    Issue number1
    DOIs
    Publication statusPublished - 1 Jan 2003

    Keywords

    • Capacitance
    • RF
    • MOSFET
    • Leakage current
    • MOS capacitor
    • Tunneling
    • Capacitance measurement

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