RF Circuit Design in Nanometer CMOS

    Research output: Other contributionOther research output

    76 Downloads (Pure)

    Abstract

    With CMOS technology entering the nanometer regime, the design of analog and RF circuits is complicated by low supply voltages, very non-linear (and nonquadratic) devices and large 1/f noise. At the same time, circuits are required to operate over increasingly wide bandwidths to implement modern multi-band communication systems as these systems move toward software-defined radio. These trends in technology and system design call for a re-thinking of analog and RF circuit design in nanometer CMOS. Dr. Bram Nauta will discuss innovations intended to enable continued progress in spite of these challenges. These innovations include thermal noise canceling, poly-phase distortion canceling and 1/f noise reduction techniques applied to basic RF circuits.
    Original languageUndefined
    PublisherIEEE
    Number of pages115
    Place of PublicationPiscataway
    ISBN (Print)1-4244-0853-9
    Publication statusPublished - 15 Feb 2007

    Publication series

    Name
    PublisherIEEE Press
    ISSN (Print)0193-6530

    Keywords

    • IR-76615
    • METIS-245159
    • EWI-12254

    Cite this