RF CMOS reliability simulations

G.T. Sasse; M. Acar; F.G. Kuper; Jurriaan Schmitz

doi:10.1016/j.microrel.2008.06.017

RF CMOS reliability simulations

G.T. Sasse, M. Acar, F.G. Kuper, Jurriaan Schmitz

Research output: Contribution to journal › Article › Academic › peer-review

17 Citations (Scopus)

4 Downloads (Pure)

Abstract

We present a simulation approach to assess the reliability of an RF CMOS circuit under user conditions, based on existing DC degradation models for gate-oxide breakdown and hot-carrier degradation. The simulator allows for lifetime prediction of circuits that can withstand multiple breakdown events. Simulation results show that three power amplifiers with comparable initial circuit performance show an astronomic difference in reliability. The tool thus proves to be an asset in the analog design process.

Original language	Undefined
Article number	10.1016/j.microrel.2008.06.017
Pages (from-to)	1581-1585
Number of pages	5
Journal	Microelectronics reliability
Volume	48
Issue number	WoTUG-31/8-9
DOIs	https://doi.org/10.1016/j.microrel.2008.06.017
Publication status	Published - 23 Aug 2008

Keywords

IR-62596
METIS-254979
SC-ICRY: Integrated Circuit Reliability and Yield
EWI-14574

Access to Document

10.1016/j.microrel.2008.06.017

http://eprints.eemcs.utwente.nl/secure2/14574/01/sasse_micr_rel.pdf

Cite this

@article{854b1cf9f1f64e3394bb0da15d66effc,

title = "RF CMOS reliability simulations",

abstract = "We present a simulation approach to assess the reliability of an RF CMOS circuit under user conditions, based on existing DC degradation models for gate-oxide breakdown and hot-carrier degradation. The simulator allows for lifetime prediction of circuits that can withstand multiple breakdown events. Simulation results show that three power amplifiers with comparable initial circuit performance show an astronomic difference in reliability. The tool thus proves to be an asset in the analog design process.",

keywords = "IR-62596, METIS-254979, SC-ICRY: Integrated Circuit Reliability and Yield, EWI-14574",

author = "G.T. Sasse and M. Acar and F.G. Kuper and Jurriaan Schmitz",

note = "10.1016/j.microrel.2008.06.017 ",

year = "2008",

month = aug,

day = "23",

doi = "10.1016/j.microrel.2008.06.017",

language = "Undefined",

volume = "48",

pages = "1581--1585",

journal = "Microelectronics reliability",

issn = "0026-2714",

publisher = "Elsevier Ltd",

number = "WoTUG-31/8-9",

}

TY - JOUR

T1 - RF CMOS reliability simulations

AU - Sasse, G.T.

AU - Acar, M.

AU - Kuper, F.G.

AU - Schmitz, Jurriaan

N1 - 10.1016/j.microrel.2008.06.017

PY - 2008/8/23

Y1 - 2008/8/23

N2 - We present a simulation approach to assess the reliability of an RF CMOS circuit under user conditions, based on existing DC degradation models for gate-oxide breakdown and hot-carrier degradation. The simulator allows for lifetime prediction of circuits that can withstand multiple breakdown events. Simulation results show that three power amplifiers with comparable initial circuit performance show an astronomic difference in reliability. The tool thus proves to be an asset in the analog design process.

AB - We present a simulation approach to assess the reliability of an RF CMOS circuit under user conditions, based on existing DC degradation models for gate-oxide breakdown and hot-carrier degradation. The simulator allows for lifetime prediction of circuits that can withstand multiple breakdown events. Simulation results show that three power amplifiers with comparable initial circuit performance show an astronomic difference in reliability. The tool thus proves to be an asset in the analog design process.

KW - IR-62596

KW - METIS-254979

KW - SC-ICRY: Integrated Circuit Reliability and Yield

KW - EWI-14574

U2 - 10.1016/j.microrel.2008.06.017

DO - 10.1016/j.microrel.2008.06.017

M3 - Article

SN - 0026-2714

VL - 48

SP - 1581

EP - 1585

JO - Microelectronics reliability

JF - Microelectronics reliability

IS - WoTUG-31/8-9

M1 - 10.1016/j.microrel.2008.06.017

ER -