RF power silicon-on-glass VDMOSFETs

Nebojša Nenadović; Vittorio Cuoco; Steven J.C.H. Theeuwen; Hugo Schellevis; Geert Spierings; Antonio Griffo; Marco Pelk; Lis K. Nanver; Rik F.F. Jos; Jan W. Slotboom

doi:10.1109/LED.2004.829025

RF power silicon-on-glass VDMOSFETs

Nebojša Nenadović^*, Vittorio Cuoco, Steven J.C.H. Theeuwen, Hugo Schellevis, Geert Spierings, Antonio Griffo, Marco Pelk, Lis K. Nanver, Rik F.F. Jos, Jan W. Slotboom

^*Corresponding author for this work

Research output: Contribution to journal › Letter › Academic › peer-review

19 Citations (Scopus)

Abstract

Applicability of vertical double-diffused MOSFETs for future base station power amplifiers has been demonstrated by characterizing the first devices fabricated in a substrate transfer silicon-on-glass technology. For a gate length of 0.8 μm and gate width of 350 μm, the measured f_T/f_max is 6/10 GHz, and the breakdown voltage approaches 100 V. The devices feature an output power of 12 dBm at the 1-dB compression point, excellent linearity (IM3/IM5 of -50/ -70 dBc at 10-dB backoff) and high power gain (14 dB) at 2 GHz, and are the first vertical DMOSFETs suitable for 2-GHz power applications. Excellent heat sinking and no significant degradation of the quiescent current due to hot-carrier injection ensure thermal stability and good long-term reliability of the fabricated devices.

Original language	English
Pages (from-to)	424-426
Number of pages	3
Journal	IEEE electron device letters
Volume	25
Issue number	6
DOIs	https://doi.org/10.1109/LED.2004.829025
Publication status	Published - 1 Jun 2004
Externally published	Yes

Keywords

Self-heating
Silicon RF power MOSFETs
Silicon-on-glass (SOG)
Substrate transfer
Vertical double-diffused MOSFETs (VDMOSFET)

Access to Document

10.1109/LED.2004.829025

Cite this

@article{694c2773fe2343a2b3dd884b58696583,

title = "RF power silicon-on-glass VDMOSFETs",

abstract = "Applicability of vertical double-diffused MOSFETs for future base station power amplifiers has been demonstrated by characterizing the first devices fabricated in a substrate transfer silicon-on-glass technology. For a gate length of 0.8 μm and gate width of 350 μm, the measured fT/fmax is 6/10 GHz, and the breakdown voltage approaches 100 V. The devices feature an output power of 12 dBm at the 1-dB compression point, excellent linearity (IM3/IM5 of -50/ -70 dBc at 10-dB backoff) and high power gain (14 dB) at 2 GHz, and are the first vertical DMOSFETs suitable for 2-GHz power applications. Excellent heat sinking and no significant degradation of the quiescent current due to hot-carrier injection ensure thermal stability and good long-term reliability of the fabricated devices.",

keywords = "Self-heating, Silicon RF power MOSFETs, Silicon-on-glass (SOG), Substrate transfer, Vertical double-diffused MOSFETs (VDMOSFET)",

author = "Neboj{\v s}a Nenadovi{\'c} and Vittorio Cuoco and Theeuwen, {Steven J.C.H.} and Hugo Schellevis and Geert Spierings and Antonio Griffo and Marco Pelk and Nanver, {Lis K.} and Jos, {Rik F.F.} and Slotboom, {Jan W.}",

year = "2004",

month = jun,

day = "1",

doi = "10.1109/LED.2004.829025",

language = "English",

volume = "25",

pages = "424--426",

journal = "IEEE electron device letters",

issn = "0741-3106",

publisher = "IEEE",

number = "6",

}

TY - JOUR

T1 - RF power silicon-on-glass VDMOSFETs

AU - Nenadović, Nebojša

AU - Cuoco, Vittorio

AU - Theeuwen, Steven J.C.H.

AU - Schellevis, Hugo

AU - Spierings, Geert

AU - Griffo, Antonio

AU - Pelk, Marco

AU - Nanver, Lis K.

AU - Jos, Rik F.F.

AU - Slotboom, Jan W.

PY - 2004/6/1

Y1 - 2004/6/1

N2 - Applicability of vertical double-diffused MOSFETs for future base station power amplifiers has been demonstrated by characterizing the first devices fabricated in a substrate transfer silicon-on-glass technology. For a gate length of 0.8 μm and gate width of 350 μm, the measured fT/fmax is 6/10 GHz, and the breakdown voltage approaches 100 V. The devices feature an output power of 12 dBm at the 1-dB compression point, excellent linearity (IM3/IM5 of -50/ -70 dBc at 10-dB backoff) and high power gain (14 dB) at 2 GHz, and are the first vertical DMOSFETs suitable for 2-GHz power applications. Excellent heat sinking and no significant degradation of the quiescent current due to hot-carrier injection ensure thermal stability and good long-term reliability of the fabricated devices.

AB - Applicability of vertical double-diffused MOSFETs for future base station power amplifiers has been demonstrated by characterizing the first devices fabricated in a substrate transfer silicon-on-glass technology. For a gate length of 0.8 μm and gate width of 350 μm, the measured fT/fmax is 6/10 GHz, and the breakdown voltage approaches 100 V. The devices feature an output power of 12 dBm at the 1-dB compression point, excellent linearity (IM3/IM5 of -50/ -70 dBc at 10-dB backoff) and high power gain (14 dB) at 2 GHz, and are the first vertical DMOSFETs suitable for 2-GHz power applications. Excellent heat sinking and no significant degradation of the quiescent current due to hot-carrier injection ensure thermal stability and good long-term reliability of the fabricated devices.

KW - Self-heating

KW - Silicon RF power MOSFETs

KW - Silicon-on-glass (SOG)

KW - Substrate transfer

KW - Vertical double-diffused MOSFETs (VDMOSFET)

UR - http://www.scopus.com/inward/record.url?scp=2942752392&partnerID=8YFLogxK

U2 - 10.1109/LED.2004.829025

DO - 10.1109/LED.2004.829025

M3 - Letter

AN - SCOPUS:2942752392

SN - 0741-3106

VL - 25

SP - 424

EP - 426

JO - IEEE electron device letters

JF - IEEE electron device letters

IS - 6

ER -

RF power silicon-on-glass VDMOSFETs

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this