RF power silicon-on-glass VDMOSFETs

Nebojša Nenadović*, Vittorio Cuoco, Steven J.C.H. Theeuwen, Hugo Schellevis, Geert Spierings, Antonio Griffo, Marco Pelk, Lis K. Nanver, Rik F.F. Jos, Jan W. Slotboom

*Corresponding author for this work

Research output: Contribution to journalLetterAcademicpeer-review

18 Citations (Scopus)

Abstract

Applicability of vertical double-diffused MOSFETs for future base station power amplifiers has been demonstrated by characterizing the first devices fabricated in a substrate transfer silicon-on-glass technology. For a gate length of 0.8 μm and gate width of 350 μm, the measured fT/fmax is 6/10 GHz, and the breakdown voltage approaches 100 V. The devices feature an output power of 12 dBm at the 1-dB compression point, excellent linearity (IM3/IM5 of -50/ -70 dBc at 10-dB backoff) and high power gain (14 dB) at 2 GHz, and are the first vertical DMOSFETs suitable for 2-GHz power applications. Excellent heat sinking and no significant degradation of the quiescent current due to hot-carrier injection ensure thermal stability and good long-term reliability of the fabricated devices.

Original languageEnglish
Pages (from-to)424-426
Number of pages3
JournalIEEE electron device letters
Volume25
Issue number6
DOIs
Publication statusPublished - 1 Jun 2004
Externally publishedYes

Keywords

  • Self-heating
  • Silicon RF power MOSFETs
  • Silicon-on-glass (SOG)
  • Substrate transfer
  • Vertical double-diffused MOSFETs (VDMOSFET)

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