Ring-gate MOSFET test structures for measuring surface-charge-layer sheet resistance on high-resistivity-silicon substrates

S. B. Evseev*, L. K. Nanver, S. Milosavljević

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

10 Citations (Scopus)

Abstract

Ring-gate MOSFET test structures have been developed with which a differential measurement technique can be used to accurately determine the surface-charge-layer sheet resistance on high-resistivity-silicon substrates. The difference in substrate properties and influence of special surface passivation techniques that are designed to suppress the otherwise conductive surface channel can thus be monitored and characterized for RF transmission line applications.

Original languageEnglish
Title of host publication2006 International Conference on Microelectronic Test Structures
Subtitle of host publicationDigest of Technical Papers
Pages3-8
Number of pages6
Volume2006
DOIs
Publication statusPublished - 13 Oct 2006
Externally publishedYes
EventInternational Conference on Microelectronic Test Structures 2006 - Austin, United States
Duration: 6 Mar 20069 Mar 2006
http://www.homepages.ed.ac.uk/ajw/ICMTS/

Conference

ConferenceInternational Conference on Microelectronic Test Structures 2006
Abbreviated titleICMTS 2006
CountryUnited States
CityAustin
Period6/03/069/03/06
Internet address

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