Abstract
Ring-gate MOSFET test structures have been developed with which a differential measurement technique can be used to accurately determine the surface-charge-layer sheet resistance on high-resistivity-silicon substrates. The difference in substrate properties and influence of special surface passivation techniques that are designed to suppress the otherwise conductive surface channel can thus be monitored and characterized for RF transmission line applications.
Original language | English |
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Title of host publication | 2006 International Conference on Microelectronic Test Structures |
Subtitle of host publication | Digest of Technical Papers |
Pages | 3-8 |
Number of pages | 6 |
Volume | 2006 |
DOIs | |
Publication status | Published - 13 Oct 2006 |
Externally published | Yes |
Event | International Conference on Microelectronic Test Structures 2006 - Austin, United States Duration: 6 Mar 2006 → 9 Mar 2006 http://www.homepages.ed.ac.uk/ajw/ICMTS/ |
Conference
Conference | International Conference on Microelectronic Test Structures 2006 |
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Abbreviated title | ICMTS 2006 |
Country/Territory | United States |
City | Austin |
Period | 6/03/06 → 9/03/06 |
Internet address |