Ring-gate MOSFET test structures for measuring surface-charge-layer sheet resistance on high-resistivity-silicon substrates

S. B. Evseev; L. K. Nanver; S. Milosavljević

doi:10.1109/ICMTS.2006.1614263

Ring-gate MOSFET test structures for measuring surface-charge-layer sheet resistance on high-resistivity-silicon substrates

S. B. Evseev^*, L. K. Nanver, S. Milosavljević

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

11 Citations (Scopus)

Abstract

Ring-gate MOSFET test structures have been developed with which a differential measurement technique can be used to accurately determine the surface-charge-layer sheet resistance on high-resistivity-silicon substrates. The difference in substrate properties and influence of special surface passivation techniques that are designed to suppress the otherwise conductive surface channel can thus be monitored and characterized for RF transmission line applications.

Original language	English
Title of host publication	2006 International Conference on Microelectronic Test Structures
Subtitle of host publication	Digest of Technical Papers
Pages	3-8
Number of pages	6
Volume	2006
DOIs	https://doi.org/10.1109/ICMTS.2006.1614263
Publication status	Published - 13 Oct 2006
Externally published	Yes
Event	International Conference on Microelectronic Test Structures 2006 - Austin, United States Duration: 6 Mar 2006 → 9 Mar 2006 http://www.homepages.ed.ac.uk/ajw/ICMTS/

Conference

Conference	International Conference on Microelectronic Test Structures 2006
Abbreviated title	ICMTS 2006
Country/Territory	United States
City	Austin
Period	6/03/06 → 9/03/06
Internet address	http://www.homepages.ed.ac.uk/ajw/ICMTS/

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10.1109/ICMTS.2006.1614263

Cite this

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title = "Ring-gate MOSFET test structures for measuring surface-charge-layer sheet resistance on high-resistivity-silicon substrates",

abstract = "Ring-gate MOSFET test structures have been developed with which a differential measurement technique can be used to accurately determine the surface-charge-layer sheet resistance on high-resistivity-silicon substrates. The difference in substrate properties and influence of special surface passivation techniques that are designed to suppress the otherwise conductive surface channel can thus be monitored and characterized for RF transmission line applications.",

author = "Evseev, {S. B.} and Nanver, {L. K.} and S. Milosavljevi{\'c}",

year = "2006",

month = oct,

day = "13",

doi = "10.1109/ICMTS.2006.1614263",

language = "English",

isbn = "1424401674",

volume = "2006",

pages = "3--8",

booktitle = "2006 International Conference on Microelectronic Test Structures",

note = "International Conference on Microelectronic Test Structures 2006, ICMTS 2006 ; Conference date: 06-03-2006 Through 09-03-2006",

url = "http://www.homepages.ed.ac.uk/ajw/ICMTS/",

}

Evseev, SB, Nanver, LK & Milosavljević, S 2006, Ring-gate MOSFET test structures for measuring surface-charge-layer sheet resistance on high-resistivity-silicon substrates. in 2006 International Conference on Microelectronic Test Structures : Digest of Technical Papers. vol. 2006, 1614263, pp. 3-8, International Conference on Microelectronic Test Structures 2006, Austin, Texas, United States, 6/03/06. https://doi.org/10.1109/ICMTS.2006.1614263

Ring-gate MOSFET test structures for measuring surface-charge-layer sheet resistance on high-resistivity-silicon substrates. / Evseev, S. B.; Nanver, L. K.; Milosavljević, S.

2006 International Conference on Microelectronic Test Structures : Digest of Technical Papers. Vol. 2006 2006. p. 3-8 1614263.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - Ring-gate MOSFET test structures for measuring surface-charge-layer sheet resistance on high-resistivity-silicon substrates

AU - Evseev, S. B.

AU - Nanver, L. K.

AU - Milosavljević, S.

PY - 2006/10/13

Y1 - 2006/10/13

N2 - Ring-gate MOSFET test structures have been developed with which a differential measurement technique can be used to accurately determine the surface-charge-layer sheet resistance on high-resistivity-silicon substrates. The difference in substrate properties and influence of special surface passivation techniques that are designed to suppress the otherwise conductive surface channel can thus be monitored and characterized for RF transmission line applications.

AB - Ring-gate MOSFET test structures have been developed with which a differential measurement technique can be used to accurately determine the surface-charge-layer sheet resistance on high-resistivity-silicon substrates. The difference in substrate properties and influence of special surface passivation techniques that are designed to suppress the otherwise conductive surface channel can thus be monitored and characterized for RF transmission line applications.

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M3 - Conference contribution

AN - SCOPUS:33749538283

SN - 1424401674

SN - 9781424401673

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BT - 2006 International Conference on Microelectronic Test Structures

T2 - International Conference on Microelectronic Test Structures 2006

Y2 - 6 March 2006 through 9 March 2006

ER -

Ring-gate MOSFET test structures for measuring surface-charge-layer sheet resistance on high-resistivity-silicon substrates

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