Rise-time effects in ggnMOSt under TLP stress

G. Boselli, A.J. Mouthaan, F.G. Kuper

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    4 Citations (Scopus)
    Original languageUndefined
    Title of host publicationMIEL International Microelectronics Reliability
    Place of PublicationNis, Yugoslavia
    Pages-
    Publication statusPublished - 1 May 1999

    Keywords

    • METIS-113912

    Cite this

    Boselli, G., Mouthaan, A. J., & Kuper, F. G. (1999). Rise-time effects in ggnMOSt under TLP stress. In MIEL International Microelectronics Reliability (pp. -). Nis, Yugoslavia.