TY - GEN
T1 - Robust AlGaN/GaN Low Noise Amplifier MMICs for C-, Ku- and Ka-Band Space Applications
AU - Suijker, E.M.
AU - Rodenburg, M.
AU - Hoogland, J.A.
AU - van Heijningen, M
AU - Seelmann-Eggebert, M.
AU - Quay, R.
AU - Bruckner, P.
AU - van Vliet, Frank Edward
N1 - 10.1109/csics.2009.5315640
PY - 2009/10/11
Y1 - 2009/10/11
N2 - Abstract
The high power capabilities in combination with the low noise performance of gallium nitride (GaN) makes this technology an excellent choice for robust receivers. This paper presents the design and measured results of three different LNAs, which operate in C-, Ku-, and Ka-band. The designs are realized in 0.25 mum and 0.15 mum AlGaN/GaN microstrip technology. The measured noise figure is 1.2, 1.9 and 4.0 dB for the C-, Ku-, and Ka-frequency band respectively. The robustness of the LNAs have been tested by applying CW source power levels of 42 dBm, 42 dBm and 28 dBm for the C-band, Ku-band and Ka-band LNA respectively. No degradation in performance has been observed.
AB - Abstract
The high power capabilities in combination with the low noise performance of gallium nitride (GaN) makes this technology an excellent choice for robust receivers. This paper presents the design and measured results of three different LNAs, which operate in C-, Ku-, and Ka-band. The designs are realized in 0.25 mum and 0.15 mum AlGaN/GaN microstrip technology. The measured noise figure is 1.2, 1.9 and 4.0 dB for the C-, Ku-, and Ka-frequency band respectively. The robustness of the LNAs have been tested by applying CW source power levels of 42 dBm, 42 dBm and 28 dBm for the C-band, Ku-band and Ka-band LNA respectively. No degradation in performance has been observed.
KW - IR-76684
KW - EWI-19997
KW - METIS-276419
U2 - 10.1109/csics.2009.5315640
DO - 10.1109/csics.2009.5315640
M3 - Conference contribution
SN - 1550-8781
SP - 1
EP - 4
BT - Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE
PB - IEEE
Y2 - 11 October 2009 through 14 October 2009
ER -