The high power capabilities in combination with the low noise performance of gallium nitride (GaN) makes this technology an excellent choice for robust receivers. This paper presents the design and measured results of three different LNAs, which operate in C-, Ku-, and Ka-band. The designs are realized in 0.25 mum and 0.15 mum AlGaN/GaN microstrip technology. The measured noise figure is 1.2, 1.9 and 4.0 dB for the C-, Ku-, and Ka-frequency band respectively. The robustness of the LNAs have been tested by applying CW source power levels of 42 dBm, 42 dBm and 28 dBm for the C-band, Ku-band and Ka-band LNA respectively. No degradation in performance has been observed.
|Conference||Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE|
|Period||11/10/09 → 14/10/09|