Robust AlGaN/GaN Low Noise Amplifier MMICs for C-, Ku- and Ka-Band Space Applications

E.M. Suijker; M. Rodenburg; J.A. Hoogland; M van Heijningen; M. Seelmann-Eggebert; R. Quay; P. Bruckner; Frank Edward van Vliet

doi:10.1109/csics.2009.5315640

Robust AlGaN/GaN Low Noise Amplifier MMICs for C-, Ku- and Ka-Band Space Applications

E.M. Suijker, M. Rodenburg, J.A. Hoogland, M van Heijningen, M. Seelmann-Eggebert, R. Quay, P. Bruckner, Frank Edward van Vliet

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

66 Citations (Scopus)

585 Downloads (Pure)

Abstract

Abstract The high power capabilities in combination with the low noise performance of gallium nitride (GaN) makes this technology an excellent choice for robust receivers. This paper presents the design and measured results of three different LNAs, which operate in C-, Ku-, and Ka-band. The designs are realized in 0.25 mum and 0.15 mum AlGaN/GaN microstrip technology. The measured noise figure is 1.2, 1.9 and 4.0 dB for the C-, Ku-, and Ka-frequency band respectively. The robustness of the LNAs have been tested by applying CW source power levels of 42 dBm, 42 dBm and 28 dBm for the C-band, Ku-band and Ka-band LNA respectively. No degradation in performance has been observed.

Original language	Undefined
Title of host publication	Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE
Publisher	IEEE
Pages	1-4
Number of pages	4
ISBN (Print)	1550-8781
DOIs	https://doi.org/10.1109/csics.2009.5315640
Publication status	Published - 11 Oct 2009
Event	Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE - USA Greensboro NC Duration: 11 Oct 2009 → 14 Oct 2009

Publication series

Name
Publisher	IEEE
ISSN (Print)	1550-8781

Conference

Conference	Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE
Period	11/10/09 → 14/10/09
Other	11-14-Oct 2009

Keywords

IR-76684
EWI-19997
METIS-276419

Access to Document

10.1109/csics.2009.5315640

CISC2009Final published version, 454 KB

http://eprints.eemcs.utwente.nl/secure2/19997/01/CISC2009.pdf

Cite this

Suijker, E. M., Rodenburg, M., Hoogland, J. A., van Heijningen, M., Seelmann-Eggebert, M., Quay, R., Bruckner, P., & van Vliet, F. E. (2009). Robust AlGaN/GaN Low Noise Amplifier MMICs for C-, Ku- and Ka-Band Space Applications. In Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE (pp. 1-4). IEEE. https://doi.org/10.1109/csics.2009.5315640

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title = "Robust AlGaN/GaN Low Noise Amplifier MMICs for C-, Ku- and Ka-Band Space Applications",

abstract = "Abstract The high power capabilities in combination with the low noise performance of gallium nitride (GaN) makes this technology an excellent choice for robust receivers. This paper presents the design and measured results of three different LNAs, which operate in C-, Ku-, and Ka-band. The designs are realized in 0.25 mum and 0.15 mum AlGaN/GaN microstrip technology. The measured noise figure is 1.2, 1.9 and 4.0 dB for the C-, Ku-, and Ka-frequency band respectively. The robustness of the LNAs have been tested by applying CW source power levels of 42 dBm, 42 dBm and 28 dBm for the C-band, Ku-band and Ka-band LNA respectively. No degradation in performance has been observed.",

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author = "E.M. Suijker and M. Rodenburg and J.A. Hoogland and {van Heijningen}, M and M. Seelmann-Eggebert and R. Quay and P. Bruckner and {van Vliet}, {Frank Edward}",

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Suijker, EM, Rodenburg, M, Hoogland, JA, van Heijningen, M, Seelmann-Eggebert, M, Quay, R, Bruckner, P & van Vliet, FE 2009, Robust AlGaN/GaN Low Noise Amplifier MMICs for C-, Ku- and Ka-Band Space Applications. in Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE. IEEE, pp. 1-4, Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE, 11/10/09. https://doi.org/10.1109/csics.2009.5315640

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AU - Suijker, E.M.

AU - Rodenburg, M.

AU - Hoogland, J.A.

AU - van Heijningen, M

AU - Seelmann-Eggebert, M.

AU - Quay, R.

AU - Bruckner, P.

AU - van Vliet, Frank Edward

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PY - 2009/10/11

Y1 - 2009/10/11

N2 - Abstract The high power capabilities in combination with the low noise performance of gallium nitride (GaN) makes this technology an excellent choice for robust receivers. This paper presents the design and measured results of three different LNAs, which operate in C-, Ku-, and Ka-band. The designs are realized in 0.25 mum and 0.15 mum AlGaN/GaN microstrip technology. The measured noise figure is 1.2, 1.9 and 4.0 dB for the C-, Ku-, and Ka-frequency band respectively. The robustness of the LNAs have been tested by applying CW source power levels of 42 dBm, 42 dBm and 28 dBm for the C-band, Ku-band and Ka-band LNA respectively. No degradation in performance has been observed.

AB - Abstract The high power capabilities in combination with the low noise performance of gallium nitride (GaN) makes this technology an excellent choice for robust receivers. This paper presents the design and measured results of three different LNAs, which operate in C-, Ku-, and Ka-band. The designs are realized in 0.25 mum and 0.15 mum AlGaN/GaN microstrip technology. The measured noise figure is 1.2, 1.9 and 4.0 dB for the C-, Ku-, and Ka-frequency band respectively. The robustness of the LNAs have been tested by applying CW source power levels of 42 dBm, 42 dBm and 28 dBm for the C-band, Ku-band and Ka-band LNA respectively. No degradation in performance has been observed.

KW - IR-76684

KW - EWI-19997

KW - METIS-276419

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